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IXTY2N65X2

IXTY2N65X2
Mfr. #:
IXTY2N65X2
Hersteller:
Littelfuse
Beschreibung:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTY2N65X2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXTY2N65X2 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
2.3 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
4.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
55 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X2-Class
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
1.1 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
70
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.081130 oz
Tags
IXTY2N, IXTY2, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***trelec
MOSFET, Single - N-Channel, 650V, 2A, 55W, TO-252
***S
new, original packaged
***ark
Mosfet, N-Ch, 650V, 2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):2.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXTY2N65X2
DISTI # V36:1790_15875898		IXYS CorporationTrans MOSFET N-CH 650V 2A 3-Pin(2+Tab) DPAK0
    IXTY2N65X2
    DISTI # IXTY2N65X2-ND    		IXYS CorporationMOSFET N-CH 650V 2A X2 TO-252
    RoHS: Compliant
    Min Qty: 70
    Container: Tube    		Temporarily Out of Stock
    • 70:$1.2880
    IXTY2N65X2
    DISTI # 747-IXTY2N65X2    		IXYS CorporationMOSFET
    RoHS: Compliant    		140
    • 1:$1.6400
    • 10:$1.4800
    • 25:$1.2900
    • 50:$1.2100
    • 100:$1.1900
    • 250:$0.9660
    • 500:$0.9260
    • 1000:$0.7680
    • 2500:$0.6440
    IXTY2N65X2
    DISTI # IXTY2N65X2    		IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,2A,55W,TO252130
    • 70:$0.6900
    • 20:$0.7600
    • 5:$0.8600
    • 1:$0.9600
    IXTY2N65X2
    DISTI # 2674795    		IXYS CorporationMOSFET, N-CH, 650V, 2A, TO-252
    RoHS: Compliant    		5
    • 100:£1.1500
    • 25:£1.1700
    • 5:£1.5700
    IXTY2N65X2
    DISTI # 2674795    		IXYS CorporationMOSFET, N-CH, 650V, 2A, TO-252
    RoHS: Compliant    		5
    • 2500:$1.0300
    • 1000:$1.0800
    • 500:$1.1400
    • 250:$1.2100
    • 100:$1.3900
    • 25:$1.6400
    • 10:$2.0200
    • 1:$2.3200
    Bild Teil # Beschreibung
    C4D05120E

    Mfr.#: C4D05120E

    OMO.#: OMO-C4D05120E

    		 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
    CS0603KRX7R0BB104

    Mfr.#: CS0603KRX7R0BB104

    OMO.#: OMO-CS0603KRX7R0BB104

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100 nF 100 V 10% Ceramic Capacitors
    CS0603KRX7R0BB104

    Mfr.#: CS0603KRX7R0BB104

    OMO.#: OMO-CS0603KRX7R0BB104-YAGEO

    		 CAP CER 0.1UF 100V X7R 0603
    C4D05120E

    Mfr.#: C4D05120E

    OMO.#: OMO-C4D05120E-WOLFSPEED

    		 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
    Verfügbarkeit
    Aktie:
    140
    Auf Bestellung:
    2123
    Menge eingeben:
    Der aktuelle Preis von IXTY2N65X2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,64 $
    1,64 $
    10
    1,48 $
    14,80 $
    25
    1,29 $
    32,25 $
    50
    1,21 $
    60,50 $
    100
    1,19 $
    119,00 $
    250
    0,97 $
    241,50 $
    500
    0,93 $
    463,00 $
    1000
    0,77 $
    768,00 $
    2500
    0,64 $
    1 610,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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