AS4C512M8D3-12BCNTR

Mfr. #:: AS4C512M8D3-12BCNTR
Hersteller:: Alliance Memory
Beschreibung:: DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: AS4C512M8D3-12BCNTR Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Allianzgedächtnis

Produktkategorie:: DRAM

RoHS:: Y

Typ:: SDRAM - DDR3

Datenbusbreite:: 8 bit

Organisation:: 512 M x 8

Paket / Koffer:: FBGA-78

Speichergröße:: 4 Gbit

Maximale Taktfrequenz:: 800 MHz

Zugriffszeit:: 13.75 ns

Versorgungsspannung - Max.:: 1.575 V

Versorgungsspannung - Min.:: 1.283 V

Versorgungsstrom - Max.:: 82 mA

Minimale Betriebstemperatur:: 0 C

Maximale Betriebstemperatur:: + 95 C

Serie:: AS4C512M8D3-12

Verpackung:: Spule

Marke:: Allianzgedächtnis

Montageart:: SMD/SMT

Feuchtigkeitsempfindlich:: ja

Produktart:: DRAM

Werkspackungsmenge:: 1000

Unterkategorie:: Speicher & Datenspeicherung

Tags: AS4C512M8D3-1, AS4C512M8, AS4C5, AS4C, AS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AS4C512M8D3-12BCNTR Beschreibung

***et: DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin F-BGA T/R

***i-Key: IC DRAM 4GBIT PARALLEL 78FBGA

***et: DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA

***ark: 4G, 1.5V, Ddr3, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs

***I SCT: DDR SDRAM, 512Mx8, 1.5V, 8K, BGA-78,RoHS

***i-Key: IC DRAM 4GBIT PARALLEL 78TWBGA

***ark: 4G, 1.35V, Ddr3L, 512Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (9Mm X10.5Mm) Rohs, It

***et Europe: DRAM Chip DDR3L SDRAM 4Gbit 512M x 8 1.35V 78-Pin TWBGA Tray

***I SCT: DDR SDRAM, 512Mx8, 1.35V, 8K, BGA-78,RoHS

***i-Key: IC DRAM 4GBIT PARALLEL 78TWBGA

***ark: 4G, 1.5V, DDR3, 512Mx8, 1333MT/s @ 9-9-9, 78 ball BGA (9mm x10.5mm) RoHS

***et: DRAM Chip DDR3 SDRAM 4G-Bit 512M x 8 1.5V 78-Pin TW-BGA

***or: IC DRAM 4GBIT PARALLEL 78TWBGA

***et: DRAM Chip DDR3L SDRAM 4G-Bit 512M x 8 1.35V 78-Pin F-BGA

***nell: DDR34G512MX8FBGA, TRAY, DRAM; DDR34G512MX8FBGA, TRAY, DRAM

***ron SCT: DRAM, DDR3 SDRAM, 4Gb, x8, 1.35V, 78-ball FBGA, RoHS

***ark: Dram, Ddr3L, 4Gbit, 0 To 95Deg C Rohs Compliant: Yes

*** Stop Electro: DDR3L DRAM, 512MX8, CMOS, PBGA78

***DA Technology Co., Ltd.: Product Description Demo for Development.

***S: French Electronic Distributor since 1988

***ment14 APAC: DRAM, 512M X 8BIT, 0 TO 95DEG C; DRAM Type:DDR3; DRAM Density:4Gbit; DRAM Memory Configuration:512M x 8bit; Clock Frequency:933MHz; Memory Case Style:TFBGA; No. of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07ns

***et: DRAM Chip DDR3L SDRAM 4G-Bit 1G x 4 1.35V 78-Pin F-BGA

*** International: IC SDRAM 4GBIT 933MHZ 78FBGA

***NGYU ELECTRONICS: IC DRAM 4G PARALLEL 78FBGA

*** Electronic Components: DRAM DDR3 4G 1GX4 FBGA

***el Electronic: IC REG BUCK ADJ SMD

***ark: Dram, 1G X 4Bit, 0 To 95Deg C; Dram Type:ddr3; Dram Density:4Gbit; Dram Memory Configuration:1G X 4Bit; Clock Frequency:933Mhz; Memory Case Style:tfbga; No. Of Pins:78Pins; Supply Voltage Nom:1.35V; Access Time:1.07Ns Rohs Compliant: Yes

***enic: Parallel 4Gb (512M x 8) 1.14V ~ 1.26V Volatile FBGA-78 DDR SDRAM ROHS

***et Europe: DRAM Chip DDR4 SDRAM 4G-Bit 512M x 8 1.2V 78-Pin F-BGA

***ron SCT: DRAM, DDR4, 4Gb, x8, 78-ball FBGA, RoHS

***el Electronic: IC REG BUCK ADJUSTABLE 3A 8SOIC

*** Stop Electro: DDR4 DRAM, 512MX8, CMOS, PBGA78

***ponent Sense: 4GBIT(X8) PB-FREE 16-BANK DDR4 1.2V 213

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
AS4C512M8D3-12BCNTR DISTI # AS4C512M8D3-12BCNTR-ND	Alliance Memory Inc	IC DRAM 4G PARALLEL 78FBGA RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
AS4C512M8D3-12BCNTR DISTI # 913-A4C512M8D312BCNT	Alliance Memory Inc	DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3 RoHS: Compliant	0

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: AS4C512M8D3LB-10BINTR OMO.#: OMO-AS4C512M8D3LB-10BINTR	DRAM 4G - B DIE - 10NS OPTION 512M x 8 1.35V 933MHz DDR3-1866bps/pin Industrial (-40 95 C) 78-ball FBGA
	Mfr.#: AS4C512M8D3LB-12BINTR OMO.#: OMO-AS4C512M8D3LB-12BINTR	DRAM 4G 1.35V 800MHz 512M x 8 DDR3 I-Temp
	Mfr.#: AS4C512M8D3-12BAN OMO.#: OMO-AS4C512M8D3-12BAN	DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3L-12BIN OMO.#: OMO-AS4C512M8D3L-12BIN	DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3L-12BCNTR OMO.#: OMO-AS4C512M8D3L-12BCNTR	DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3L-12BAN OMO.#: OMO-AS4C512M8D3L-12BAN	DRAM DDR3, 4GB. 1.35V 800MHz,512M x 8
	Mfr.#: AS4C512M8D3-12BINTR OMO.#: OMO-AS4C512M8D3-12BINTR-ALLIANCE-MEMORY	DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3-12BCNTR OMO.#: OMO-AS4C512M8D3-12BCNTR-ALLIANCE-MEMORY	DRAM 4G 1.5V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3L-12BIN OMO.#: OMO-AS4C512M8D3L-12BIN-ALLIANCE-MEMORY	DRAM 4G 1.35V 1600Mhz 512M x 8 DDR3
	Mfr.#: AS4C512M8D3LA-12BANTR OMO.#: OMO-AS4C512M8D3LA-12BANTR-ALLIANCE-MEMORY	IC DRAM 4G PARALLEL 78FBGA Automotive, AEC-Q100

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von AS4C512M8D3-12BCNTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

AS4C512M8D3-1 6
AS4C512M8 38
AS4C5 56
AS4C 824
AS4 1355

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AS4C512M8D3-12BCNTR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes