BFU790F,115

Mfr. #:: BFU790F,115
Hersteller:: NXP Semiconductors
Beschreibung:: RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BFU790F,115 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BFU790F,115 Datasheet BFU790F,115 Datasheet (P4-P6)BFU790F,115 Datasheet (P7-P9)BFU790F,115 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:: BFU790F,115 Mehr Informationen BFU790F,115 Product Details

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-Bipolartransistoren

RoHS:: Y

Transistortyp:: Bipolar

Technologie:: SiGe

DC-Kollektor/Basisverstärkung hfe Min:: 235

Kollektor- Emitterspannung VCEO Max:: 2.8 V

Emitter- Basisspannung VEBO:: 1 V

Kontinuierlicher Kollektorstrom:: 100 mA

Montageart:: SMD/SMT

Paket / Koffer:: SOT-343

Verpackung:: Spule

Arbeitsfrequenz:: 110 GHz

Typ:: HF-Silizium-Germanium

Marke:: NXP Semiconductors

Pd - Verlustleistung:: 234 mW

Produktart:: HF-Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Teil # Aliase:: 934064616115

Gewichtseinheit:: 0.000235 oz

Tags: BFU79, BFU7, BFU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFU790F,115 Beschreibung

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon Germanium, NPN

***ure Electronics: BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

***et: Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R

***el Electronic: RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

*** Semiconductors SCT: NPN wideband silicon germanium RF transistor, DFP4, RoHS

***ment14 APAC: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F

***nell: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 234mW; DC Collector Current: 100mA; DC Current Gain hFE: 235hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Silicon Germanium, NPN

***ical: Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R

***enic: 2.8V 220mW 25mA 330@10mA,2V 45GHz NPN +150¡æ@(Tj) SOT-343F Bipolar Transistors - BJT ROHS

***ure Electronics: BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:45GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 220mW; DC Collector Current: 70mA; DC Current Gain hFE: 155hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU710 Series NPN 5.5 V 10 mA Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:43GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 43GHz; Power Dissipation Pd: 136mW; DC Collector Current: 2mA; DC Current Gain hFE: 200hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R

***ure Electronics: BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R

***nell: TRANSISTOR, RF, NPN, 4.5V, 22GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 22GHz; Power Dissipation Pd: 54mW; DC Collector Current: 12mA; DC Current Gain hFE: 80hFE; RF Transistor Case: SOT-343R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFG410W Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et Europe: Trans GP BJT NPN 4.5V 0.03A 4-Pin(3+Tab) CMPAK T/R

***nell: RF WIDEBAND TRANSISTOR, NPN, 4.5V, 25GHZ, 4-SOT-343R

***ark: Rf Wideband Transistor, Npn, 4.5V, 25Ghz, 4-Sot-343R; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:4.5V; Transition Frequency Ft:25Ghz; Power Dissipation Pd:135Mw; Dc Collector Current:30Ma; Dc Current Gain Hfe:80Hfe Rohs Compliant: Yes

***ark: Bipolar - Rf Transistor, Npn, 15 V, 9 Ghz, 500 Mw, 120 Ma, 120 Rohs Compliant: Yes

*** Source Electronics: Trans RF BJT NPN 15V 0.12A 500mW 4-Pin CMPAK / NPN 9 GHz wideband transistor

***ment14 APAC: Transistor, NPN, 9GHZ, SOT-343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:9GHz; Power Dissipation

***nell: TRANSISTOR, NPN, 9GHZ, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 15V; Transition Frequency ft: 9GHz; Power Dissipation Pd: 500mW; DC Collector Current: 120mA; DC Current Gain hFE: 120hFE; RF Transistor Case: SOT-343; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Collector Current Ic: 120mA; Continuous Collector Current Ic Max: 120mA; Current Gain Hfe Max: 250; Current Ic hFE: 40mA; DC Current Gain Hfe Max: 250; DC Current Gain Hfe Min: 100; Gain Bandwidth ft Typ: 9GHz; Hfe Min: 100; Hfe Typ: 120; Junction Temperature Tj Max: 175°C; Noise Figure Typ: 1.9dB; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Pin Configuration: C(1),B(2),E(3+4); Power @ 1dB Gain Compression, P1dB: 21dBm; Termination Type: Surface Mount Device; Test Frequency: 900MHz; Transistor Case Style: SOT-343; Voltage Vcbo: 20V

***p One Stop: Trans RF BJT NPN 15V 0.12A 500mW 4-Pin(3+Tab) CMPAK T/R

***ark: RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343R

***ment14 APAC: RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343R; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:500mW; DC Collector Current:120mA; DC Current Gain hFE:120

BFU790F,115 Mehr Informationen

BFU7xxF Microwave Transistors: NXP Semiconductors offer BFU7xxF Microwave Transistors with low noise, high linearity in a plastic, 4-pin dual-emitter SOT343F package. BFU710F Microwave Transistors feature a high maximum power gain of 14 dB at 12 GHz and noise figure = 1.45 dB at 12 GHz. BFU760F Microwave Transistors feature high maximum output third order intercept point 32 dBm at 1.8 GHz. BFU790F Microwave Transistors feature high maximum output power at 1 dB compression 20 dBm at 1.8 GHz. Applications for NXP Semiconductors BFU7xxF Microwave Transistors include high linearity applications, medium output power applications, GPS, Zigbee and Bluetooth.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BFU790F,115 DISTI # V72:2272_06518381	NXP Semiconductors	BFU790F,115 RoHS: Compliant	4844	3000:$0.1881 1000:$0.2267 500:$0.2868 250:$0.3016 100:$0.3017 25:$0.4827 10:$0.4831 1:$0.5785
BFU790F,115 DISTI # 568-8459-1-ND	NXP Semiconductors	RF TRANS NPN 2.8V 25GHZ 4DFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1813In Stock	1000:$0.2567 500:$0.3322 100:$0.4227 10:$0.5660 1:$0.6600
BFU790F,115 DISTI # 568-8459-6-ND	NXP Semiconductors	RF TRANS NPN 2.8V 25GHZ 4DFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1813In Stock	1000:$0.2567 500:$0.3322 100:$0.4227 10:$0.5660 1:$0.6600
BFU790F,115 DISTI # 568-8459-2-ND	NXP Semiconductors	RF TRANS NPN 2.8V 25GHZ 4DFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1979 6000:$0.2125 3000:$0.2272
BFU790F,115 DISTI # 31065059	NXP Semiconductors	BFU790F,115 RoHS: Compliant	107900	65:$0.1560
BFU790F,115 DISTI # 31065425	NXP Semiconductors	BFU790F,115 RoHS: Compliant	6000	65:$0.1560
BFU790F,115 DISTI # 25749576	NXP Semiconductors	BFU790F,115 RoHS: Compliant	4844	36:$0.5785
BFU790F,115 DISTI # BFU790F,115	Avnet, Inc.	Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R (Alt: BFU790F,115) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2809 6000:€0.2299 12000:€0.2109 18000:€0.1949 30000:€0.1809
BFU790F,115 DISTI # BFU790F,115	Avnet, Inc.	Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R - Tape and Reel (Alt: BFU790F,115) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.2029 12000:$0.1949 18000:$0.1869 30000:$0.1809 60000:$0.1769
BFU790F,115 DISTI # BFU790F,115	Avnet, Inc.	Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R (Alt: BFU790F,115) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0	6000:$0.1596 12000:$0.1551 18000:$0.1510 30000:$0.1470 60000:$0.1451 150000:$0.1432 300000:$0.1396
BFU790F,115 DISTI # 24T6122	NXP Semiconductors	Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R RoHS Compliant: Yes	0	1:$0.2800
BFU790F115	NXP Semiconductors	RoHS: Not Compliant	220	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300
BFU790F,115 DISTI # 771-BFU790F115	NXP Semiconductors	RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS: Compliant	5696	1:$0.6100 10:$0.5040 100:$0.3080 1000:$0.2380 3000:$0.2030 9000:$0.1890 24000:$0.1790 45000:$0.1750
BFU790F,115 DISTI # BFU790F	NXP Semiconductors	NPN-HF 2,8V 100mA 234mW 25GHz SOT343F RoHS: Compliant	0	100:€0.1440 500:€0.1240 1000:€0.1140 3000:€0.1100
BFU790F,115 DISTI # BFU790F-115	NXP Semiconductors	RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT RoHS: Compliant	0	6000:$0.2000
BFU790F,115 DISTI # 2776284	NXP Semiconductors	RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F RoHS: Compliant	2383	5000:$0.3030 1000:$0.3170 500:$0.3390 250:$0.4100 100:$0.4920 25:$0.6780 5:$0.7870
BFU790F,115 DISTI # 2776284	NXP Semiconductors	RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F RoHS: Compliant	2383	500:£0.1800 250:£0.2070 100:£0.2330 25:£0.4020 5:£0.4310

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von BFU790F,115 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,61 $~~; ~~0,61 $~~

10: ~~0,50 $~~; ~~5,04 $~~

100: ~~0,31 $~~; ~~30,80 $~~

1000: ~~0,24 $~~; ~~238,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BFU79 4
BFU7 41
BFU 154

BFU790F,115

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes