IRF640NLPBF

Mfr. #:: IRF640NLPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF640NLPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF640NLPBF Datasheet IRF640NLPBF Datasheet (P4-P6)IRF640NLPBF Datasheet (P7-P9)IRF640NLPBF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:: IRF640NLPBF Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-262-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 200 V

Id - Kontinuierlicher Drainstrom:: 18 A

Rds On - Drain-Source-Widerstand:: 150 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 44.7 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 150 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Höhe:: 9.45 mm

Länge:: 10.2 mm

Transistortyp:: 1 N-Channel

Breite:: 4.5 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 6.8 S

Abfallzeit:: 5.5 ns

Produktart:: MOSFET

Anstiegszeit:: 19 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 23 ns

Typische Einschaltverzögerungszeit:: 10 ns

Teil # Aliase:: SP001563296

Gewichtseinheit:: 0.084199 oz

Tags: IRF640N, IRF640, IRF64, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF640NLPBF Bewertungen und Rezensionen

G***r

Great Deal Many Thanks.

2019-04-02

N***v

Delivery 42 days. No visible damage during delivery and soldering jambs. I haven't checked it yet. Thanks to the seller.

2019-01-23

D***v

No delivery. Money on the dispute returned.

2019-04-29

S***h

The seller is responsible, the packaging is normal, all whole. All good!!!

2019-06-03

IRF640NLPBF Beschreibung

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-262;PD 150W;VGS +/-20V

***ure Electronics: Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-262-3

*** Source Electronics: MOSFET N-CH 200V 18A TO-262 / Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 18A, TO-262; Tra; N CHANNEL MOSFET, 200V, 18A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

IRF640NLPBF Mehr Informationen

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF640NLPBF DISTI # V99:2348_13890573	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	10000:$0.6538 5000:$0.6767 2500:$0.6988 1000:$0.7413 500:$0.8645 100:$0.9661 10:$1.1450 1:$1.2932
IRF640NLPBF DISTI # IRF640NLPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 18A TO-262 RoHS: Compliant Min Qty: 1 Container: Tube	2168In Stock	1000:$1.0174 500:$1.2056 100:$1.5191 10:$1.8640 1:$2.0500
IRF640NLPBF DISTI # 27158271	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	7506	1000:$0.8336 500:$1.0060 100:$1.1491 27:$1.4414
IRF640NLPBF DISTI # 26198161	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	500:$0.8645 100:$0.9661 10:$1.1450
IRF640NLPBF DISTI # IRF640NLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF640NLPBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.6569 2000:$0.6329 4000:$0.6099 6000:$0.5889 10000:$0.5789
IRF640NLPBF DISTI # SP001563296	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-262 (Alt: SP001563296) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.6069 10:€0.5399 25:€0.4859 50:€0.4409 100:€0.4049 500:€0.3729 1000:€0.3469
IRF640NLPBF DISTI # 63J7350	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 18A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):150mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes	1000	1:$1.6800 10:$1.4300 100:$1.1400 500:$0.9980 1000:$0.8270
IRF640NLPBF DISTI # 70017531	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,TO-262,PD 150W,VGS +/-20V RoHS: Compliant	0	650:$2.1500
IRF640NLPBF	International Rectifier	RoHS: Not Compliant	2350	1000:$0.8400 500:$0.8800 100:$0.9200 25:$0.9600 1:$1.0300
IRF640NLPBF DISTI # 942-IRF640NLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS: Compliant	731	1:$1.6800 10:$1.4300 100:$1.1400 500:$0.9980 1000:$0.8270
IRF640NLPBF DISTI # 8312859	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V TO-262, PK	560	5:£1.3020 25:£1.0280 50:£0.9280 125:£0.8260 250:£0.8100
IRF640NLPBF DISTI # IRF640NLPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,18A,150W,TO262	352	1:$1.0200 3:$0.9600 10:$0.8100 100:$0.7300
IRF640NLPBF DISTI # 2576887	Infineon Technologies AG	MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant	1000	1:$2.6600 10:$2.2700 100:$1.8100 500:$1.5800 1000:$1.3200
IRF640NLPBF. DISTI # 9537511	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 18A, TO-262 RoHS: Compliant	64	1:$1.0300
IRF640NLPBF DISTI # 2576887	Infineon Technologies AG	MOSFET, N-CH, 200V, 18A, TO-262-3 RoHS: Compliant	1025	5:£1.2000 25:£0.8260 100:£0.8220 250:£0.8180 500:£0.7630
IRF640NLPBF DISTI # C1S322000481453	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant	987	500:$0.8645 100:$0.9661 10:$1.1450

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	Mfr.#: TN1625-1000G-TR OMO.#: OMO-TN1625-1000G-TR-STMICROELECTRONICS	SCRs 16 Amp 1000 Volt
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von IRF640NLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,67 $~~; ~~1,67 $~~

10: ~~1,42 $~~; ~~14,20 $~~

100: ~~1,14 $~~; ~~114,00 $~~

500: ~~1,00 $~~; ~~499,00 $~~

1000: ~~0,83 $~~; ~~827,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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