SI2303BDS-T1-E3

Mfr. #:: SI2303BDS-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 781-SI2303CDS-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2303BDS-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2303BDS-T1-E3 Datasheet SI2303BDS-T1-E3 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SI2303BDS-E3

Gewichtseinheit:: 0.000282 oz

Tags: SI2303BDS-T, SI2303B, SI2303, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2303BDS-T1-E3 Beschreibung

***ler Electronic: Mosfet, P-ch, Vdss -30V, Rds(on) 0.15 Ohm, Id -1.49A, TO-236 (SOT-23), Pd 0.7W, Vgs +/-2

***ical: Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

***ment14 APAC: TRANSISTOR, MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:1.49A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:900mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:1.49A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:3V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2303BDS-T1-E3 DISTI # SI2303BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 1.49A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI2303BDS-T1-E3 DISTI # SI2303BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 1.49A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI2303BDS-T1-E3 DISTI # SI2303BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 1.49A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI2303BDS-T1-E3 DISTI # 06J7566	Vishay Intertechnologies	P CHANNEL MOSFET, -30V, 1.49A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.49A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes	0	1:$0.3330 10:$0.3220 100:$0.2550 250:$0.2420 500:$0.2260 1000:$0.1810
SI2303BDS-T1-E3 DISTI # 70026096	Vishay Siliconix	MOSFET,P-Ch,VDSS -30V,RDS(ON) 0.15Ohm,ID -1.49A,TO-236 (SOT-23),PD 0.7W,VGS +/-2 RoHS: Compliant	0	3000:$0.1630
SI2303BDS-T1-E3 DISTI # 781-SI2303BDS-E3	Vishay Intertechnologies	MOSFET 30V 1.7A 1.25W RoHS: Compliant	0
SI2303BDS-T1 DISTI # 781-SI2303BDS	Vishay Intertechnologies	MOSFET 30V 1.64A 1.25W RoHS: Compliant	0
SI2303BDST1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 2350
SI2303BDS-T1-E3	Vishay Semiconductors	INSTOCK	3000
SI2303BDS-T1-E3 DISTI # 1653681RL	Vishay Intertechnologies	TRANSISTOR, MOSFET RoHS: Compliant	0	20:$0.7460 100:$0.6020 500:$0.4780 1000:$0.4150 2500:$0.3590 5000:$0.3330
SI2303BDS-T1-E3 DISTI # 1653681	Vishay Intertechnologies	TRANSISTOR, MOSFET RoHS: Compliant	0	20:$0.7460 100:$0.6020 500:$0.4780 1000:$0.4150 2500:$0.3590 5000:$0.3330
SI2303CDS-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 9000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI2303BDS-T1 OMO.#: OMO-SI2303BDS-T1	MOSFET RECOMMENDED ALT 781-SI2303CDS-T1-GE3
	Mfr.#: SI2303BDS-T1-E3 OMO.#: OMO-SI2303BDS-T1-E3	MOSFET RECOMMENDED ALT 781-SI2303CDS-T1-GE3
	Mfr.#: SI2303BDS-T1-GE3 OMO.#: OMO-SI2303BDS-T1-GE3	MOSFET RECOMMENDED ALT 781-SI2303CDS-T1-GE3
	Mfr.#: SI2303BDS OMO.#: OMO-SI2303BDS-1190	Neu und Original
	Mfr.#: SI2303BDS-T1 OMO.#: OMO-SI2303BDS-T1-VISHAY	MOSFET P-CH 30V 1.49A SOT23
	Mfr.#: SI2303BDS-T1-E3 OMO.#: OMO-SI2303BDS-T1-E3-VISHAY	Neu und Original
	Mfr.#: SI2303BDS-T1-GE3 OMO.#: OMO-SI2303BDS-T1-GE3-VISHAY	MOSFET P-CH 30V 1.49A SOT23-3
	Mfr.#: SI2303BDS-T1-GE3 (VISHAY OMO.#: OMO-SI2303BDS-T1-GE3-VISHAY-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von SI2303BDS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI2303BDS-T 4
SI2303B 5
SI2303 24
SI230 331
SI23 561
SI2 1125

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SI2303BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes