SI6926ADQ-T1-E3

Mfr. #:: SI6926ADQ-T1-E3
Hersteller:: Vishay
Beschreibung:: MOSFET 2N-CH 20V 4.1A 8TSSOP
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI6926ADQ-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SI6926ADQ-T1-E3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: Vishay Siliconix

Produktkategorie: FETs - Arrays

Serie: SI6926ADQ

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: SI6926ADQ-T1

Gewichtseinheit: 0.005573 oz

Montageart: SMD/SMT

Paket-Koffer: 8-TSSOP (0.173", 4.40mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-TSSOP

Aufbau: Dual

FET-Typ: 2 N-Channel (Dual)

Leistung max: 830mW

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 20V

Eingangskapazität-Ciss-Vds: -

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 4.1A

Rds-On-Max-Id-Vgs: 30 mOhm @ 4.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Lade-Qg-Vgs: 10.5nC @ 4.5V

Pd-Verlustleistung: 830 mW

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 16 ns

Anstiegszeit: 16 ns

Vgs-Gate-Source-Spannung: 8 V

ID-Dauer-Drain-Strom: 4.1 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Widerstand: 30 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 46 ns

Typische-Einschaltverzögerungszeit: 6 ns

Kanal-Modus: Erweiterung

Tags: SI6926ADQ-T1-E, SI6926ADQ-T1, SI6926ADQ-T, SI6926AD, SI6926A, SI6926, SI692, SI69, SI6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6926ADQ-T1-E3 Beschreibung

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount Power Mosfet - TSSOP-8

***ical: Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R

***ark: Transistor Polarity:dual N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.1A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V Rohs Compliant: No

SI6926ADQ-T1-E3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI6926ADQ-T1-E3 DISTI # V72:2272_09215418	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	5965	3000:$0.3610 1000:$0.3859 500:$0.4716 250:$0.5356 100:$0.5415 25:$0.6670 10:$0.6751 1:$0.7876
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13720In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13720In Stock	1000:$0.3988 500:$0.4985 100:$0.6730 10:$0.8720 1:$1.0000
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 4.1A 8TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.3509
SI6926ADQ-T1-E3 DISTI # 30667537	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R RoHS: Compliant	5965	3000:$0.3610 1000:$0.3859 500:$0.4716 250:$0.5356 100:$0.5415 25:$0.6670 19:$0.6751
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6926ADQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5239 6000:$0.5079 12000:$0.4869 18000:$0.4739 30000:$0.4609
SI6926ADQ-T1-E3 DISTI # SI6926ADQ-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4.1A 8-Pin TSSOP T/R (Alt: SI6926ADQ-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6869 6000:€0.4689 12000:€0.4029 18000:€0.3719 30000:€0.3469
SI6926ADQ-T1-E3 DISTI # 85W2161	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV,Power Dissipation Pd:1W,Product Range:- , RoHS Compliant: No	0	1:$1.0300 10:$0.8420 25:$0.7770 50:$0.7110 100:$0.6460 500:$0.5560 1000:$0.4390
SI6926ADQ-T1-E3. DISTI # 30AC0180	Vishay Intertechnologies	DUAL N-CHANNEL 2.5-V (G-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4360 3000:$0.4310 6000:$0.4250 12000:$0.4200 18000:$0.4150 30000:$0.4100
SI6926ADQ-T1-E3 DISTI # 781-SI6926ADQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8 RoHS: Compliant	5571	1:$1.0300 10:$0.8420 100:$0.6460 500:$0.5560 1000:$0.4390 3000:$0.4100
SI6926ADQ-T1-E3	Vishay Siliconix	4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	17	6:$0.7500 1:$1.0000
SI6926ADQ-T1-E3 DISTI # C1S803603829957	Vishay Intertechnologies	MOSFETs RoHS: Compliant	5965	250:$0.5356 100:$0.5415 25:$0.6670 10:$0.6751
SI6926ADQ-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs TSSOP-8	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3	MOSFET 20V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6926AEDQ-T1-E3 OMO.#: OMO-SI6926AEDQ-T1-E3	MOSFET 20V 4.5A 0.83W
	Mfr.#: SI6926AEDQ-T1-GE3 OMO.#: OMO-SI6926AEDQ-T1-GE3-317	RF Bipolar Transistors MOSFET 20V 4.5A 1.0W 30mohm @ 4.5V
	Mfr.#: SI6926ADQ-T1-E3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-E3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SI6926ADQ-T1-GE3-CUT TAPE OMO.#: OMO-SI6926ADQ-T1-GE3-CUT-TAPE-1190	Neu und Original
	Mfr.#: SI6926ADQ OMO.#: OMO-SI6926ADQ-1190	Neu und Original
	Mfr.#: SI6926ADQ-T1-E3 OMO.#: OMO-SI6926ADQ-T1-E3-VISHAY	MOSFET 2N-CH 20V 4.1A 8TSSOP
	Mfr.#: SI6926ADQ-T1-E3-S OMO.#: OMO-SI6926ADQ-T1-E3-S-1190	Neu und Original
	Mfr.#: SI6926ADQ-TE2-E3-PBF OMO.#: OMO-SI6926ADQ-TE2-E3-PBF-1190	Neu und Original
	Mfr.#: SI6926ADQT1GE3 OMO.#: OMO-SI6926ADQT1GE3-1190	Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SI6926ADQ-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,44 $~~; ~~0,44 $~~

10: ~~0,42 $~~; ~~4,17 $~~

100: ~~0,40 $~~; ~~39,50 $~~

500: ~~0,37 $~~; ~~186,55 $~~

1000: ~~0,35 $~~; ~~351,10 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI6926ADQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes