SQJQ100E-T1_GE3

SQJQ100E-T1_GE3
Mfr. #:
SQJQ100E-T1_GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 200A POWERPAK8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQJQ100E-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SQJQ100E-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SQJQ1, SQJQ, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK
***et Europe
N-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ
***i-Key
MOSFET N-CH 40V 200A POWERPAK8
***ark
MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 40V, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):900µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:136W; Transistor Case Style:PowerPAK; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, CA-N, 40V, POWERPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:200A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):900µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:PowerPAK; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQJQ100E-T1_GE3
DISTI # V72:2272_17600386
Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
9172
3107023
0
    SQJQ100E-T1_GE3
    DISTI # V99:2348_17600386
    Vishay IntertechnologiesSQJQ100E-T1_GE3**MULT1
    9172
    3107023
    0
    • 2000:$1.3190
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3TR-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    On Order
    • 6000:$1.2285
    • 2000:$1.2757
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3CT-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 40V 200A POWERPAK8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$1.4114
    • 500:$1.7034
    • 100:$2.0732
    • 10:$2.5790
    • 1:$2.8700
    SQJQ100E-T1_GE3
    DISTI # SQJQ100E-T1_GE3
    Vishay IntertechnologiesN-Channel MOSFETs in 8 mm x 8 mm PowerPAK, 40 V, 200 A, 1.2 mΩ - Tape and Reel (Alt: SQJQ100E-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 12000:$1.0900
    • 20000:$1.0900
    • 4000:$1.1900
    • 8000:$1.1900
    • 2000:$1.2900
    SQJQ100E-T1_GE3
    DISTI # 20AC4001
    Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
    • 10000:$1.1300
    • 6000:$1.1700
    • 4000:$1.2200
    • 2000:$1.3500
    • 1000:$1.4300
    • 1:$1.5200
    SQJQ100E-T1_GE3
    DISTI # 78-SQJQ100E-T1_GE3
    Vishay IntertechnologiesMOSFET 40V Vds 160A Id AEC-Q101 Qualified
    RoHS: Compliant
    0
    • 1:$2.7900
    • 10:$2.3200
    • 100:$1.8000
    • 500:$1.5700
    • 1000:$1.3000
    • 2000:$1.2100
    • 4000:$1.1700
    SQJQ100E-T1_GE3
    DISTI # 2708322
    Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK
    RoHS: Compliant
    0
    • 1000:$2.1300
    • 500:$2.5700
    • 100:$3.1300
    • 10:$3.8900
    • 1:$4.3300
    SQJQ100E-T1_GE3
    DISTI # 2708322
    Vishay IntertechnologiesMOSFET, AEC-Q101, N-CH, 40V, POWERPAK0
    • 500:£1.2700
    • 250:£1.4200
    • 100:£1.4600
    • 10:£1.7700
    • 1:£2.4200
    Bild Teil # Beschreibung
    SQJQ100E-T1_GE3

    Mfr.#: SQJQ100E-T1_GE3

    OMO.#: OMO-SQJQ100E-T1-GE3

    MOSFET 40V Vds 160A Id AEC-Q101 Qualified
    SQJQ100EL-T1_GE3

    Mfr.#: SQJQ100EL-T1_GE3

    OMO.#: OMO-SQJQ100EL-T1-GE3

    MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
    SQJQ100E-T1_GE3

    Mfr.#: SQJQ100E-T1_GE3

    OMO.#: OMO-SQJQ100E-T1-GE3-VISHAY

    MOSFET N-CH 40V 200A POWERPAK8
    SQJQ100EL

    Mfr.#: SQJQ100EL

    OMO.#: OMO-SQJQ100EL-1190

    Neu und Original
    SQJQ100EL-T1_GE3

    Mfr.#: SQJQ100EL-T1_GE3

    OMO.#: OMO-SQJQ100EL-T1-GE3-VISHAY

    MOSFET N-CH 40V 200A POWERPAK8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von SQJQ100E-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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