APT31M100L

APT31M100L
Mfr. #:
APT31M100L
Hersteller:
Microchip / Microsemi
Beschreibung:
MOSFET FG, MOSFET, 1000V, TO-264
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT31M100L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT31M100L DatasheetAPT31M100L Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-264-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
32 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
260 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.04 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Vorwärtstranskonduktanz - Min:
34 S
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
130 ns
Typische Einschaltverzögerungszeit:
39 ns
Gewichtseinheit:
0.352740 oz
Tags
APT31, APT3, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) TO-264
***rochip
MOSFET MOS8 1000 V 31 A TO-264
*** Stop Electro
Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
APT31M100L
DISTI # APT31M100L
Microchip Technology IncPower MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 300:$10.6900
  • 150:$10.8900
  • 90:$11.1900
  • 60:$11.5900
  • 30:$11.9900
APT31M100L
DISTI # 494-APT31M100L
Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant
12
  • 1:$18.6400
  • 10:$16.9400
  • 25:$15.6700
  • 50:$14.8200
  • 100:$14.3000
  • 250:$13.0500
  • 500:$11.7500
Bild Teil # Beschreibung
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L

MOSFET FG, MOSFET, 1000V, TO-264
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2

MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2-MICROSEMI

Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT31M100B2)
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L-MICROSEMI

Power MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
APT31N60SCS

Mfr.#: APT31N60SCS

OMO.#: OMO-APT31N60SCS-1190

Neu und Original
APT31N90JC3

Mfr.#: APT31N90JC3

OMO.#: OMO-APT31N90JC3-1190

Neu und Original
Verfügbarkeit
Aktie:
12
Auf Bestellung:
1995
Menge eingeben:
Der aktuelle Preis von APT31M100L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
18,64 $
18,64 $
10
16,94 $
169,40 $
25
15,67 $
391,75 $
50
14,82 $
741,00 $
100
14,30 $
1 430,00 $
250
13,05 $
3 262,50 $
500
11,75 $
5 875,00 $
1000
10,90 $
10 900,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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