OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXFP270N06T3

IXFP270N06T3
Mfr. #:
IXFP270N06T3
Hersteller:
Littelfuse
Beschreibung:
MOSFET 60V/270A TrenchT3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFP270N06T3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP270N06T3 DatasheetIXFP270N06T3 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXFP270N06T3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
270 A
Rds On - Drain-Source-Widerstand:
3.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
200 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
480 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXF
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
83 S
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
36 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
39 ns
Gewichtseinheit:
0.063493 oz
Tags
IXFP2, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
60V/270A TRENCHT3 HIPERFET MOSFE
60V TrenchT3 HiPerFET Power MOSFETs
IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ, can withstand a junction temperature up to 175°C, and are avalanche rated at high avalanche current levels.Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. In addition, the fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs help achieve high efficiency, especially during high-speed switching.IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFP270N06T3
DISTI # IXFP270N06T3-ND		IXYS Corporation60V/270A TRENCHT3 HIPERFET MOSFE
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$3.3750
IXFP270N06T3
DISTI # 747-IXFP270N06T3		IXYS CorporationMOSFET 60V/270A TrenchT3
RoHS: Compliant		55
  • 1:$4.8200
  • 10:$4.3100
  • 25:$3.7500
  • 50:$3.6800
  • 100:$3.5400
  • 250:$3.0200
  • 500:$2.8600
  • 1000:$2.4200
  • 2500:$2.0700
Bild Teil # Beschreibung
SQ3426AEEV-T1_GE3

Mfr.#: SQ3426AEEV-T1_GE3

OMO.#: OMO-SQ3426AEEV-T1-GE3

 MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
GS61004B-E01-MR

Mfr.#: GS61004B-E01-MR

OMO.#: OMO-GS61004B-E01-MR

 MOSFET 100V 45A E-Mode GaN
NTMFS6B14NT1G

Mfr.#: NTMFS6B14NT1G

OMO.#: OMO-NTMFS6B14NT1G

 MOSFET NFET SO8FL 100V 15A 14MOH
C4D05120E

Mfr.#: C4D05120E

OMO.#: OMO-C4D05120E

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
MKS4F041004F00MSSD

Mfr.#: MKS4F041004F00MSSD

OMO.#: OMO-MKS4F041004F00MSSD-1190

 Film Capacitors 1uF 20% 250V 8x15x18
SQ3426AEEV-T1_GE3

Mfr.#: SQ3426AEEV-T1_GE3

OMO.#: OMO-SQ3426AEEV-T1-GE3-VISHAY

 MOSFET N-CH 60V 7A 6TSOP
SFH 4556-VAW

Mfr.#: SFH 4556-VAW

OMO.#: OMO-SFH-4556-VAW-OSRAM-OPTO-SEMICONDUCTORS

 RADIAL T1 3/4
CRCW0805100KFKEAC

Mfr.#: CRCW0805100KFKEAC

OMO.#: OMO-CRCW0805100KFKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 100K 1% ET1
C4D05120E

Mfr.#: C4D05120E

OMO.#: OMO-C4D05120E-WOLFSPEED

 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 5A
NTMFS6B14NT1G

Mfr.#: NTMFS6B14NT1G

OMO.#: OMO-NTMFS6B14NT1G-ON-SEMICONDUCTOR

 IGBT Transistors MOSFET NFET SO8FL 100V 15A 14MOH
Verfügbarkeit
Aktie:
55
Auf Bestellung:
2038
Menge eingeben:
Der aktuelle Preis von IXFP270N06T3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,82 $
4,82 $
10
4,31 $
43,10 $
25
3,75 $
93,75 $
50
3,68 $
184,00 $
100
3,54 $
354,00 $
250
3,02 $
755,00 $
500
2,86 $
1 430,00 $
1000
2,42 $
2 420,00 $
2500
2,07 $
5 175,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top