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BSL806NL6327HTSA1

BSL806NL6327HTSA1
Mfr. #:
BSL806NL6327HTSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 20V 2.3A 6TSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSL806NL6327HTSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSL806NL6327HTSA1 DatasheetBSL806NL6327HTSA1 Datasheet (P4-P6)BSL806NL6327HTSA1 Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Arrays
Serie
OptiMOS
Verpackung
Digi-ReelR
Paket-Koffer
SC-74, SOT-457
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Lieferanten-Geräte-Paket
PG-TSOP6-6
FET-Typ
2 N-Channel (Dual)
Leistung max
500mW
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
259pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
2.3A
Rds-On-Max-Id-Vgs
57 mOhm @ 2.3A, 2.5V
Vgs-th-Max-Id
750mV @ 11μA
Gate-Lade-Qg-Vgs
1.7nC @ 2.5V
Tags
BSL806NL, BSL806, BSL8, BSL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 2.3A 6-Pin TSOP T/R
***ponent Stockers USA
2300 mA 20 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET
***i-Key
MOSFET 2N-CH 20V 2.3A 6TSOP
***i-Key Marketplace
SMALL SIGNAL N-CHANNEL MOSFET
***emi
Power MOSFET 20V 2A 65 mOhm Single P-Channel TSOP-6
***i-Key
MOSFET P-CH 20V 2.7A 6-TSOP
***ponent Stockers USA
2700 mA 20 V P-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Power Field-Effect Transistor
***emi
Power MOSFET 20V 2.35A 90 mOhm Single P-Channel TSOP-6
***i-Key
MOSFET P-CH 20V 2.2A 6-TSOP
***ponent Stockers USA
2200 mA 20 V P-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Power Field-Effect Transistor
***Yang
- Tape and Reel
***ure Electronics
Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - TSOP-6
***ical
Trans MOSFET N-CH 20V 3A 6-Pin TSOP T/R
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***ment14 APAC
MOSFET, N, TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:2.5V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:860mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Base Number:3442; Current Id Max:3A; Output Current Max:860mA; Package / Case:TSOP; Power Dissipation Pd:860mW; Power Dissipation Pd:20mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
***Yang
Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOP T/R - Tape and Reel
***ure Electronics
Dual N-Channel 20 V 70 mO 3.8 nC Surface Mount Power Mosfet - TSOP-6
***emi
Dual N-Channel Power MOSFET 20V 3.5A 70mΩ
***ark
DUAL N CHANNEL MOSFET, 20V, TSOP; Channel Type:N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:3.5A; Continuous Drain Current Id P Channel:3.5A RoHS Compliant: Yes
***nell
MOSFET, DUAL NCH, 20V, 3.5A, TSOP; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0417ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 900mW; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
SI3460DDV-T1-GE3 N-channel MOSFET Transistor; 7.9 A; 20 V; 6-Pin TSOP
***itex
Transistor: N-MOSFET; unipolar; 20V; 7.9A; 0.028ohm; 2.7W; -55+150 deg.C; SMD; TSOP6
***ure Electronics
N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
***ark
Mosfet,n Ch,d-S,20V,7.9A,tsop6, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,D-S,20V,7.9A,TSOP6; Transistor Polarity:N Channel; Continuous Drain Current Id:7.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Power Dissipation Pd:1.7W; Voltage Vgs Max:8V
*** Source Electronics
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
***ure Electronics
Dual N / P-Channel 20 V 0.058/0.195 O 4.8 nC Surface Mount Power Mosfet - TSOP-
***ment14 APAC
MOSFET, N/P-CH, 20V, 3.9A, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.9A; Source Voltage Vds:20V; On Resistance
***roFlash
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
***ark
Mosfet, N & P-Ch, 20V, 3.9A, 150Deg C; Channel Type:complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:3.9A; No. Of Pins:6Pins; Msl:- Rohs Compliant: Yes
***nell
MOSFET, N/P-CH, 20V, 3.9A, TSOP-6; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)
Teil # Mfg. Beschreibung Aktie Preis
BSL806NL6327HTSA1
DISTI # BSL806NL6327HTSA1TR-ND		Infineon Technologies AGMOSFET 2N-CH 20V 2.3A 6TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSL806NL6327HTSA1
    DISTI # BSL806NL6327HTSA1CT-ND    		Infineon Technologies AGMOSFET 2N-CH 20V 2.3A 6TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSL806NL6327HTSA1
      DISTI # BSL806NL6327HTSA1DKR-ND      		Infineon Technologies AGMOSFET 2N-CH 20V 2.3A 6TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSL806NL6327HTSA1
        DISTI # BSL806NL6327HTSA1        		Infineon Technologies AGTrans MOSFET Dual N-CH 20V 2.3A 6-Pin TSOP T/R - Bulk (Alt: BSL806NL6327HTSA1)
        RoHS: Compliant
        Min Qty: 2273
        Container: Bulk        		Americas - 0
        • 2273:$0.1579
        • 2275:$0.1519
        • 4548:$0.1469
        • 11365:$0.1419
        • 22730:$0.1389
        BSL806N L6327
        DISTI # 726-BSL806NL6327        		Infineon Technologies AGMOSFET N-Ch 20V 2.3A TSOP-6
        RoHS: Compliant        		1236
        • 1:$0.7400
        • 10:$0.5270
        • 100:$0.3900
        • 500:$0.3350
        • 1000:$0.2600
        • 3000:$0.1990
        • 9000:$0.1850
        • 24000:$0.1750
        • 45000:$0.1710
        BSL806NL6327HTSA1Infineon Technologies AGSmall Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		21000
        • 500:$0.1500
        • 1000:$0.1500
        • 100:$0.1600
        • 25:$0.1700
        • 1:$0.1800
        Bild Teil # Beschreibung
        BSL806NL6327

        Mfr.#: BSL806NL6327

        OMO.#: OMO-BSL806NL6327-1190

        		 Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        BSL806NL6327HTSA1

        Mfr.#: BSL806NL6327HTSA1

        OMO.#: OMO-BSL806NL6327HTSA1-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 20V 2.3A 6TSOP
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1500
        Menge eingeben:
        Der aktuelle Preis von BSL806NL6327HTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,21 $
        0,21 $
        10
        0,20 $
        1,98 $
        100
        0,19 $
        18,75 $
        500
        0,18 $
        88,55 $
        1000
        0,17 $
        166,70 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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