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PXFC192207SHV1R250XTMA1

PXFC192207SHV1R250XTMA1
Mfr. #:
PXFC192207SHV1R250XTMA1
Hersteller:
Infineon Technologies
Beschreibung:
RF MOSFET Transistors RFP-LD10M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PXFC192207SHV1R250XTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
PXFC192207SH R250 SP001282070 V1
Paket-Koffer
H37288-4
Technologie
Si
Tags
PXFC192207S, PXFC192, PXFC19, PXFC1, PXFC, PXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans Mosfet N-ch 65V 4-PIN H-37288G-4/2 T/r
*** Electronic Components
RF MOSFET Transistors RFP-LD10M
***el Electronic
Buffers & Line Drivers 3.3V BUF/LN DRVR N-INV 3S
***ineon
High Power RF LDMOS FET, 220 W, 28 V, 1805 1990MHz | Summary of Features: Broadband internal input and output matching; Typical Pulsed CW performance, 1880 MHz, 28 V, 10 s pulse width, 10% duty cycle, class AB - Output power at P1dB = 220 W - Efficiency = 55% - Gain = 20 dB; Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF - Output power = 50 W - Efficiency = 29% - Gain = 20 dB - ACPR = 34 dBc @5 MHz; Capable of handling 10:1 VSWR @28 V, 200 W (CW) output power; Integrated ESD protection; Low thermal resistance; Pb-free and RoHS-compliant
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***emi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ
***ure Electronics
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***el Electronic
ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
***ment14 APAC
MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
***ark
Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes
***ure Electronics
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
***ment14 APAC
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
***nell
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop Global
Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R
***nell
RF FET, 12V, 0.03A, SOT-143; Transistor Polarity: N Channel; Continuous Drain Current Id: 30mA; Drain Source Voltage Vds: 12V; On Resistance Rds(on): -; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation
***ineon
Silicon N-Channel MOSFET Triode | Summary of Features: Short-channel transistor with high S / C quality factor; For low-noise, gain-controlled input stage up to 1 GHz; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV; Car Radio
Teil # Mfg. Beschreibung Aktie Preis
PXFC192207SHV1R250XTMA1
DISTI # PXFC192207SHV1R250XTMA1-ND		Infineon Technologies AGIC AMP RF LDMOS
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$96.9286
PXFC192207SHV1R250XTMA1
DISTI # 726-PXFC192207SHV1R2		Infineon Technologies AGRF MOSFET Transistors RFP-LD10M0
    Bild Teil # Beschreibung
    PXFC192207SHV1R250XTMA1

    Mfr.#: PXFC192207SHV1R250XTMA1

    OMO.#: OMO-PXFC192207SHV1R250XTMA1-INFINEON-TECHNOLOGIES

    		 RF MOSFET Transistors RFP-LD10M
    PXFC192207SH PXFC192207F

    Mfr.#: PXFC192207SH PXFC192207F

    OMO.#: OMO-PXFC192207SH-PXFC192207F-1190

    		 Neu und Original
    PXFC192207SHV1

    Mfr.#: PXFC192207SHV1

    OMO.#: OMO-PXFC192207SHV1-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von PXFC192207SHV1R250XTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    145,39 $
    145,39 $
    10
    138,12 $
    1 381,23 $
    100
    130,85 $
    13 085,37 $
    500
    123,58 $
    61 792,00 $
    1000
    116,31 $
    116 314,40 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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