SIR826ADP-T1-GE3

SIR826ADP-T1-GE3
Mfr. #:
SIR826ADP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 80V 60A PPAK SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR826ADP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIR826ADP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
SIRxxxADP
Verpackung
Spule
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Handelsname
ThunderFET TrenchFET
Paket-Koffer
SO-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
104 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
15 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
60 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V to 2.8 V
Rds-On-Drain-Source-Widerstand
5.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
16 ns
Qg-Gate-Ladung
86 nC
Vorwärts-Transkonduktanz-Min
68 S
Tags
SIR826, SIR82, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO
***ure Electronics
N Chan, 80V, 60a, 5.5 mOhms @ 10V, PowerPAK® SO-8
***i-Key
MOSFET N-CH 80V 60A PPAK SO-8
***ark
N-CHANNEL 80-V (D-S) MOSFET
***ronik
N-CH 80V 60A 5,5mOhm PPSO-8
***
N-CHANNEL 80-V (D-S)
***nell
MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 80V, 60A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$1.2177
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.3471
  • 500:$1.6259
  • 100:$2.0904
  • 10:$2.6010
  • 1:$2.8800
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.3471
  • 500:$1.6259
  • 100:$2.0904
  • 10:$2.6010
  • 1:$2.8800
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R (Alt: SIR826ADP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.9129
  • 6000:€1.3399
  • 12000:€1.1049
  • 18000:€0.9809
  • 30000:€0.9279
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826ADP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.1929
  • 6000:$1.1579
  • 12000:$1.1109
  • 18000:$1.0799
  • 30000:$1.0509
SIR826ADP-T1-GE3
DISTI # SIR826ADP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R (Alt: SIR826ADP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR826ADP-T1-GE3
    DISTI # 99W9567
    Vishay IntertechnologiesMOSFET Transistor, N Channel, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V0
    • 1:$1.2000
    • 3000:$1.1900
    • 6000:$1.1400
    SIR826ADP-T1-GE3
    DISTI # 19X1950
    Vishay IntertechnologiesMOSFET Transistor, N Channel, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V , RoHS Compliant: Yes0
    • 1:$2.5500
    • 10:$2.1200
    • 25:$1.9600
    • 50:$1.8000
    • 100:$1.6400
    • 250:$1.5400
    • 500:$1.4400
    SIR826ADP-T1-GE3
    DISTI # 78-SIR826ADP-T1-GE3
    Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    122
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 3000:$1.1100
    • 6000:$1.0700
    SIR826ADP-T1-GE3
    DISTI # TMOSP10989
    Vishay IntertechnologiesN-CH 80V 60A 5,5mOhm PPSO-8
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 3000:$1.1400
    SIR826ADP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    Americas - Stock
      SIR826ADP-T1-GE3
      DISTI # 2364092
      Vishay IntertechnologiesMOSFET, N-CH, 80V, 60A, POWERPAKSO-8
      RoHS: Compliant
      0
      • 1:$4.0400
      • 10:$3.3500
      • 100:$2.6000
      • 500:$2.2800
      • 1000:$1.8800
      • 3000:$1.7600
      • 6000:$1.7000
      • 9000:$1.6300
      SIR826ADP-T1-GE3
      DISTI # 2364092
      Vishay IntertechnologiesMOSFET, N-CH, 80V, 60A, POWERPAKSO-8
      RoHS: Compliant
      0
      • 1:£2.4700
      • 10:£1.8100
      • 100:£1.4100
      • 250:£1.3300
      • 500:£1.2400
      Bild Teil # Beschreibung
      SIR826ADP-T1-GE3

      Mfr.#: SIR826ADP-T1-GE3

      OMO.#: OMO-SIR826ADP-T1-GE3

      MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SIR826ADP-T1-GE3

      Mfr.#: SIR826ADP-T1-GE3

      OMO.#: OMO-SIR826ADP-T1-GE3-VISHAY

      MOSFET N-CH 80V 60A PPAK SO-8
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SIR826ADP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,58 $
      1,58 $
      10
      1,50 $
      14,98 $
      100
      1,42 $
      141,87 $
      500
      1,34 $
      669,95 $
      1000
      1,26 $
      1 261,10 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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