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IXFN360N10T

IXFN360N10T
Mfr. #:
IXFN360N10T
Hersteller:
Littelfuse
Beschreibung:
MOSFET 360 Amps 100V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN360N10T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN360N10T DatasheetIXFN360N10T Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN360N10T Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
360 A
Rds On - Drain-Source-Widerstand:
2.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
525 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
830 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Produkt:
MOSFET-Leistung
Serie:
IXFN360N10
Transistortyp:
1 N-Channel
Typ:
Leistungs-MOSFET
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
110 S
Abfallzeit:
160 ns
Produktart:
MOSFET
Anstiegszeit:
100 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
47 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T
***ure Electronics
Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B
***p One Stop Japan
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B
*** Source Electronics
GigaMOS Trench HiperFET Power MOSFET
***i-Key
MOSFET N-CH 100V 360A SOT-227B
***ukat
N-Ch 100V 360A 830W 0,0026R SOT227B
***ark
Mosfet Module, N-Ch, 100V, 360A; Transistor Polarity:n Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET MODULE, N-CH, 100V, 360A; Transistor Polarity:N Channel; Continuous Drain Current Id:360A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:100V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:830W; Operating Temperature Max:175°C; Product Range:Trench HiperFET Series; SVHC:No SVHC (07-Jul-2017)
***nell
MODULO MOSFET, CA-N, 100V, 360A; Polarità Transistor:Canale N; Corrente Continua di Drain Id:360A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0026ohm; Tensione Vgs di Misura Rds(on):100V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:830W; Temperatura di Esercizio Max:175°C; Gamma Prodotti:Trench HiperFET Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFN360N10T
DISTI # V36:1790_15877367		IXYS CorporationTrans MOSFET N-CH 100V 360A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN360N10T
    DISTI # IXFN360N10T-ND    		IXYS CorporationMOSFET N-CH 100V 360A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		608In Stock
    • 500:$13.8330
    • 100:$16.2180
    • 30:$17.6490
    • 10:$19.0800
    • 1:$20.9900
    IXFN360N10T
    DISTI # 747-IXFN360N10T    		IXYS CorporationMOSFET 360 Amps 100V
    RoHS: Compliant    		591
    • 1:$20.9900
    • 10:$19.0800
    • 20:$17.6400
    • 50:$16.9200
    • 100:$16.2100
    • 200:$14.7800
    • 500:$13.8300
    IXFN360N10T
    DISTI # 1258041    		IXYS CorporationMOSFET 360A 100V SOT227, EA79
    • 20:£13.5700
    • 10:£13.8500
    • 5:£14.3500
    • 2:£15.0200
    • 1:£16.6800
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationModule,single transistor,100V,360A,SOT227B,Ugs: ±30V,screw58
    • 10:$15.6500
    • 3:$17.7900
    • 1:$19.7100
    IXFN360N10T
    DISTI # IXFN360N10T    		IXYS CorporationN-Ch 100V 360A 830W 0,0026R SOT227B
    RoHS: Compliant    		46
    • 1:€16.5000
    • 5:€13.5000
    • 10:€12.5000
    • 25:€12.0500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		11
    • 100:£11.7300
    • 50:£13.4300
    • 10:£14.0000
    • 5:£15.3300
    • 1:£16.6500
    IXFN360N10T
    DISTI # 2784061    		IXYS CorporationMOSFET MODULE, N-CH, 100V, 360A
    RoHS: Compliant    		0
    • 100:$21.3700
    • 50:$22.0400
    • 10:$22.8200
    • 5:$24.1200
    • 1:$24.5800
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    Verfügbarkeit
    Aktie:
    586
    Auf Bestellung:
    2569
    Menge eingeben:
    Der aktuelle Preis von IXFN360N10T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    20,99 $
    20,99 $
    10
    19,08 $
    190,80 $
    20
    17,64 $
    352,80 $
    50
    16,92 $
    846,00 $
    100
    16,21 $
    1 621,00 $
    200
    14,78 $
    2 956,00 $
    500
    13,83 $
    6 915,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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