SI4850EY-T1-GE3

Mfr. #:: SI4850EY-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 60V Vds 20V Vgs SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4850EY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4850EY-T1-GE3 Datasheet SI4850EY-T1-GE3 Datasheet (P4-P6)SI4850EY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:: SI4850EY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 8.5 A

Rds On - Drain-Source-Widerstand:: 22 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 18 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 3.3 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Serie:: SI4

Transistortyp:: 1 N-Channel

Breite:: 3.9 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 25 S

Abfallzeit:: 12 ns

Produktart:: MOSFET

Anstiegszeit:: 10 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 25 ns

Typische Einschaltverzögerungszeit:: 10 ns

Teil # Aliase:: SI4850EY-GE3

Gewichtseinheit:: 0.017870 oz

Tags: SI4850EY-T1, SI4850EY-T, SI4850EY, SI4850E, SI4850, SI485, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4850EY-T1-GE3 Beschreibung

***ied Electronics & Automation: SI4850EY-T1-GE3 N-channel MOSFET Transistor; 8.5 A; 60 V; 8-Pin SOIC

***Components: On a Reel of 2500, N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

***ure Electronics: N-CH MOSFET SO-8 60V 22MOHM @ 10V QG=27NC PWM OP - LEAD(PB) AND HALOGEN FREE

***et Europe: Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

***i-Key: MOSFET N-CH 60V 6A 8-SOIC

***ponent Sense: Q#N-FET 60V 22ME SO8

***ronik: N-CH 60V 9A 22mOhm SO-8 RoHSconf

***: SOIC8 60V N-CH TRENCH

***ukat: N-Ch 60V 8,5A 3,3W 0,022R SO8

***ark: N Ch Mosfet; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.7W Rohs Compliant: No

***nell: MOSFET,N CH,DIODE,60V,8.5A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On State Resistance:0.018ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:8.5A; Power Dissipation:3.3W

***ment14 APAC: MOSFET,N CH,DIODE,60V,8.5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.5A; Power Dissipation Pd:3.3W; Voltage Vgs Max:20V

SI4850EY-T1-GE3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4850EY-T1-GE3 DISTI # V72:2272_09216612	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R RoHS: Compliant	2310	1000:$0.7298 500:$0.8440 250:$0.9223 100:$0.9545 25:$1.1633 10:$1.1677 1:$1.3428
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9039In Stock	1000:$0.8086 500:$0.9759 100:$1.2548 10:$1.5610 1:$1.7300
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9039In Stock	1000:$0.8086 500:$0.9759 100:$1.2548 10:$1.5610 1:$1.7300
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	7500In Stock	2500:$0.7580
SI4850EY-T1-GE3 DISTI # 29485863	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R RoHS: Compliant	2310	1000:$0.7298 500:$0.8440 250:$0.9223 100:$0.9545 25:$1.1633 10:$1.1677
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R - Cut TR (SOS) (Alt: SI4850EY-T1-GE3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 2466	1:$1.4399 25:$1.3379 62:$1.2189 125:$1.0369 312:$0.9839 625:$0.8409 1250:$0.7479
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R (Alt: SI4850EY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 26010	2500:€0.7079 5000:€0.4829 10000:€0.4149 15000:€0.3839 25000:€0.3569
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R (Alt: SI4850EY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4850EY-T1-GE3 DISTI # SI4850EY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4850EY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3729 5000:$0.3619 10000:$0.3469 15000:$0.3379 25000:$0.3289
SI4850EY-T1-GE3 DISTI # 23T8518	Vishay Intertechnologies	MOSFET Transistor, N Channel, 6 A, 60 V, 18 mohm, 10 V, 3 V , RoHS Compliant: Yes	4119	1:$1.6600 10:$1.3800 25:$1.2800 50:$1.1700 100:$1.0700 250:$1.0000 500:$0.9320
SI4850EY-T1-GE3 DISTI # 15R5097	Vishay Intertechnologies	N CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:60V,On Resistance Rds(on):18mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.7W , RoHS Compliant: Yes	0	1:$0.7190 2500:$0.7060 5000:$0.6920
SI4850EY-T1-GE3. DISTI # 30AC0171	Vishay Intertechnologies	SOIC8 60V N-CH TRENCH , ROHS COMPLIANT: NO	0	1:$0.7190 2500:$0.7060 5000:$0.6920
SI4850EY-T1-GE3 DISTI # 70459549	Vishay Siliconix	MOSFET N-CH 60V 6A 8-SOIC RoHS: Compliant	0	2500:$1.0980
SI4850EY-T1-GE3 DISTI # 781-SI4850EY-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	3073	1:$1.6600 10:$1.3800 100:$1.0700 500:$0.9320 1000:$0.7720 2500:$0.7190 5000:$0.6920
SI4850EY-T1-GE3 DISTI # 7879014P	Vishay Intertechnologies	MOSFET N-CH 60V 6A REDUCED QG FAST SOIC8, RL	3110	25:£0.5940 125:£0.5800 625:£0.5360 1250:£0.5220
SI4850EY-T1-GE3 DISTI # 7879014	Vishay Intertechnologies	MOSFET N-CH 60V 6A REDUCED QG FAST SOIC8, PK	470	5:£1.0520 25:£0.5940 125:£0.5800 625:£0.5360 1250:£0.5220
SI4850EY-T1-GE3 DISTI # SI4850EY-GE3	Vishay Intertechnologies	N-Ch 60V 8,5A 3,3W 0,022R SO8 RoHS: Compliant	14700	50:€0.4785 100:€0.4185 500:€0.3885 2500:€0.3755
SI4850EY-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 47500
SI4850EY-T1-GE3 DISTI # XSFP00000138607	Vishay Siliconix	RoHS: Compliant	58887	2500:$1.3000 58887:$1.1800
SI4850EY-T1-GE3 DISTI # C1S803601447777	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6A 8-Pin SOIC N T/R RoHS: Compliant	2310	250:$0.9201 100:$0.9521 25:$1.1589 10:$1.1633
SI4850EY-T1-GE3 DISTI # 1858964	Vishay Intertechnologies	MOSFET,N CH,DIODE,60V,8.5A,8-SOIC RoHS: Compliant	4327	5:£1.1900 25:£0.6730 100:£0.6570 250:£0.6320 500:£0.6070
SI4850EY-T1-GE3 DISTI # 1858964RL	Vishay Intertechnologies	MOSFET,N CH,DIODE,60V,8.5A,8-SOIC RoHS: Compliant	0	1:$2.6300 10:$2.1900 100:$1.7000 500:$1.4700 1000:$1.2200 2500:$1.1400 5000:$1.1000
SI4850EY-T1-GE3 DISTI # 1858964	Vishay Intertechnologies	MOSFET,N CH,DIODE,60V,8.5A,8-SOIC RoHS: Compliant	3997	1:$2.6300 10:$2.1900 100:$1.7000 500:$1.4700 1000:$1.2200 2500:$1.1400 5000:$1.1000

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von SI4850EY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,77 $~~; ~~1,77 $~~

10: ~~1,47 $~~; ~~14,70 $~~

100: ~~1,14 $~~; ~~114,00 $~~

500: ~~1,00 $~~; ~~498,50 $~~

1000: ~~0,83 $~~; ~~826,00 $~~

Beginnen mit

SI4850EY-T1 6
SI4850EY-T 7
SI4850EY 9
SI4850E 11
SI4850 17
SI485 32
SI48 447
SI4 2994

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SI4850EY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes