We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PSMN6R1-30YLD115 DISTI # PSMN6R1-30YLD115 | Avnet, Inc. | - Bulk (Alt: PSMN6R1-30YLD115) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| PSMN6R1-30YLD115 | NXP Semiconductors | Now Nexperia PSMN6R1-30YLD - Power Field-Effect Transistor, 66A I(D), 30V, 0.00835ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK RoHS: Not Compliant | 3000 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: PSMN6R1-30YLDX OMO.#: OMO-PSMN6R1-30YLDX |
MOSFET N-channel 30 V 6.1 mo FET |
|
Mfr.#: PSMN6R1-25MLDX OMO.#: OMO-PSMN6R1-25MLDX |
MOSFET PSMN6R1-25MLD/MLFPAK/REEL 7" Q |
|
Mfr.#: PSMN6R1-30YLD OMO.#: OMO-PSMN6R1-30YLD-1190 |
Neu und Original |
|
|
Mfr.#: PSMN6R1-30YLD115 OMO.#: OMO-PSMN6R1-30YLD115-1190 |
- Bulk (Alt: PSMN6R1-30YLD115) |
|
Mfr.#: PSMN6R1-30YLDX OMO.#: OMO-PSMN6R1-30YLDX-NEXPERIA |
IGBT Transistors MOSFET N-channel 30 V 6.1 mo FET |
|
Mfr.#: PSMN6R1-25MLDX OMO.#: OMO-PSMN6R1-25MLDX-NEXPERIA |
PSMN6R1-25MLD/MLFPAK/REEL 7 Q |
