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S29GL01GS12TFIV10

S29GL01GS12TFIV10
Mfr. #:
S29GL01GS12TFIV10
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash 1G 3V 120ns Parallel NOR Flash
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL01GS12TFIV10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S29GL01GS12TFIV10 Mehr Informationen S29GL01GS12TFIV10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-56
Serie:
S29GL01G/512/256/128S
Speichergröße:
1 Gbit
Oberflächentyp:
Parallel
Organisation:
64 M x 16
Timing-Typ:
Asynchron
Datenbusbreite:
16 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Tablett
Speichertyp:
NOCH
Geschwindigkeit:
120 ns
Die Architektur:
Finsternis
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
91
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
MirrorBit Eclipse
Tags
S29GL01GS12TFI, S29GL01GS12T, S29GL01GS12, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 1024 Mbit Density, 120 ns Initial Access Time, TSOP-56, RoHS
***ure Electronics
S29GL256S Series 3.6 V 1 Gb (64 M x 16) 120 ns SMT Flash Memory - TSOP-56
***et
NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 120ns 56-Pin TSOP Tray
MirrorBit® NOR GL Flash Memory Device - EXPANSION
Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series
MirrorBit® NOR GL Flash Memory Device
Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
Teil # Mfg. Beschreibung Aktie Preis
S29GL01GS12TFIV10
DISTI # S29GL01GS12TFIV10-ND		Cypress SemiconductorIC FLASH 1G PARALLEL 56TSOP
RoHS: Compliant
Min Qty: 91
Container: Tray		Temporarily Out of Stock
  • 91:$10.0978
S29GL01GS12TFIV10
DISTI # 797-S29GL01GS12TFIV1		Cypress SemiconductorNOR Flash 1G 3V 120ns Parallel NOR Flash
RoHS: Compliant		91
  • 1:$9.6200
  • 10:$8.9000
  • 25:$8.7000
  • 50:$8.6500
  • 100:$7.8200
  • 250:$7.6500
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Verfügbarkeit
Aktie:
86
Auf Bestellung:
2069
Menge eingeben:
Der aktuelle Preis von S29GL01GS12TFIV10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,62 $
9,62 $
10
8,90 $
89,00 $
25
8,70 $
217,50 $
50
8,65 $
432,50 $
100
7,82 $
782,00 $
250
7,65 $
1 912,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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