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FQD2N60CTM_WS

FQD2N60CTM_WS
Mfr. #:
FQD2N60CTM_WS
Hersteller:
Fairchild Semiconductor
Beschreibung:
IGBT Transistors MOSFET 600V 1.9A NCH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQD2N60CTM_WS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
1.9 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
4.7 Ohms
Transistor-Polarität
N-Kanal
Tags
FQD2N60CTM, FQD2N60CT, FQD2N60C, FQD2N60, FQD2N6, FQD2N, FQD2, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 600V 2.4A DPAK
***nsix Microsemi
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***inecomponents.com
Trans MOSFET N-CH 600V 2A 3-Pin (2+Tab) TO-252 T/R
***i-Key
MOSFET N-CH 600V 2A DPAK
***ser
MOSFETs & MOSFETs RF .
*** Source Electronics
MOSFET N-CH 600V 1.7A TO252-3 / Trans MOSFET N-CH 650V 1.7A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N CH, 650V, 1.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 2.97ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***ineon SCT
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 600V, 3.7A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***ical
Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) TO-252 T/R
*** Stop Electro
Power Field-Effect Transistor, 2.4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 2.4A, TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***i-Key
MOSFET N-CH 500V 1.6A DPAK
***ser
MOSFETs 500V N-Channel QFET
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.6A; On-Resistance, Rds(on):5.3ohm; Package/Case:2-TO-252; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
FQD2N60CTM-WS
DISTI # FQD2N60CTM-WSCT-ND		ON SemiconductorMOSFET N-CH 600V 1.9A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FQD2N60CTM-WS
    DISTI # FQD2N60CTM-WSDKR-ND    		ON SemiconductorMOSFET N-CH 600V 1.9A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FQD2N60CTM-WS
      DISTI # FQD2N60CTM-WSTR-ND      		ON SemiconductorMOSFET N-CH 600V 1.9A
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4304
      FQD2N60CTM_WS
      DISTI # FQD2N60CTM-WS      		ON SemiconductorMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: FQD2N60CTM-WS)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel      		Americas - 0
      • 2500:$0.3469
      • 5000:$0.3449
      • 10000:$0.3399
      • 15000:$0.3359
      • 25000:$0.3279
      FQD2N60CTM_WS
      DISTI # FQD2N60CTM-WS      		ON SemiconductorMOS Power Transistors HV (>= 200V) (Alt: FQD2N60CTM-WS)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 0
      • 2500:€0.6399
      • 5000:€0.4979
      • 10000:€0.4129
      • 15000:€0.3479
      • 25000:€0.3229
      FQD2N60CTM-WS
      DISTI # 48AC1176      		ON SemiconductorQFC 600V 4.7OHM DPAK / REEL0
      • 1:$0.5590
      FQD2N60CTM-WS
      DISTI # 512-FQD2N60CTM_WS      		ON SemiconductorMOSFET 600V 1.9A NCH MOSFET
      RoHS: Compliant      		2747
      • 1:$0.9200
      • 10:$0.7830
      • 100:$0.6010
      • 500:$0.5320
      • 1000:$0.4200
      • 2500:$0.3720
      • 10000:$0.3580
      FQD2N60CTM_WS
      DISTI # XSKDRABV0044784      		ON SEMICONDUCTOR 
      RoHS: Compliant      		7500 in Stock0 on Order
      • 7500:$0.4573
      • 2500:$0.4900
      Bild Teil # Beschreibung
      FQD2N60CTM-WS

      Mfr.#: FQD2N60CTM-WS

      OMO.#: OMO-FQD2N60CTM-WS

      		 MOSFET 600V 1.9A NCH MOSFET
      FQD2N60CTM

      Mfr.#: FQD2N60CTM

      OMO.#: OMO-FQD2N60CTM

      		 MOSFET N-CH/600V/2A/A.QFET
      FQD2N60A

      Mfr.#: FQD2N60A

      OMO.#: OMO-FQD2N60A-1190

      		 Neu und Original
      FQD2N60C

      Mfr.#: FQD2N60C

      OMO.#: OMO-FQD2N60C-1190

      		 Neu und Original
      FQD2N60C FQD2N60 2N60D

      Mfr.#: FQD2N60C FQD2N60 2N60D

      OMO.#: OMO-FQD2N60C-FQD2N60-2N60D-1190

      		 Neu und Original
      FQD2N60C TM-(FAIRCHILD)

      Mfr.#: FQD2N60C TM-(FAIRCHILD)

      OMO.#: OMO-FQD2N60C-TM--FAIRCHILD--1190

      		 Neu und Original
      FQD2N60CTF_F080

      Mfr.#: FQD2N60CTF_F080

      OMO.#: OMO-FQD2N60CTF-F080-ON-SEMICONDUCTOR

      		 MOSFET N-CH 600V 1.9A DPAK
      FQD2N60CTM-NL

      Mfr.#: FQD2N60CTM-NL

      OMO.#: OMO-FQD2N60CTM-NL-1190

      		 Neu und Original
      FQD2N60CTM/FQD5N60C

      Mfr.#: FQD2N60CTM/FQD5N60C

      OMO.#: OMO-FQD2N60CTM-FQD5N60C-1190

      		 Neu und Original
      FQD2N60TM

      Mfr.#: FQD2N60TM

      OMO.#: OMO-FQD2N60TM-ON-SEMICONDUCTOR

      		 MOSFET N-CH 600V 2A DPAK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von FQD2N60CTM_WS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,43 $
      0,43 $
      10
      0,40 $
      4,05 $
      100
      0,38 $
      38,33 $
      500
      0,36 $
      181,00 $
      1000
      0,34 $
      340,70 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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