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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK9506-55B,127 DISTI # 568-6631-5-ND | NXP Semiconductors | MOSFET N-CH 55V 75A TO220AB Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK9506-55B127 DISTI # BUK9506-55B,127 | Avnet, Inc. | - Bulk (Alt: BUK9506-55B,127) Min Qty: 305 Container: Bulk | Americas - 0 |
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| BUK9506-55B127 DISTI # BUK9506-55B127 | Avnet, Inc. | - Bulk (Alt: BUK9506-55B127) Min Qty: 305 Container: Bulk | Americas - 0 | |
| BUK9506-55B,127 | NXP Semiconductors | Now Nexperia BUK9506-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 9 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUK9506-55A,127 |
MOSFET N-CH 55V 75A TO220AB |
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Mfr.#: BUK9506-75B OMO.#: OMO-BUK9506-75B-1152 |
MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK9506-55B OMO.#: OMO-BUK9506-55B-1152 |
MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK9506-55B127 OMO.#: OMO-BUK9506-55B127-1190 |
Now Nexperia BUK9506-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK9506-40B OMO.#: OMO-BUK9506-40B-1152 |
MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK9506-40B127 OMO.#: OMO-BUK9506-40B127-1190 |
Now Nexperia BUK9506-40B - Power Field-Effect Transistor, 75A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK9506-55A OMO.#: OMO-BUK9506-55A-1190 |
MOSFET RAIL PWR-MOS |
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Mfr.#: BUK9506-75B,127 OMO.#: OMO-BUK9506-75B-127-NEXPERIA |
MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK9506-55B,127 |
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK9506-40B,127 OMO.#: OMO-BUK9506-40B-127-NEXPERIA |
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS |