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FQP19N10

FQP19N10
Mfr. #:
FQP19N10
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP19N10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
19 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
12 S
Abfallzeit:
65 ns
Produktart:
MOSFET
Anstiegszeit:
150 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
7.5 ns
Teil # Aliase:
FQP19N10_NL
Gewichtseinheit:
0.050717 oz
Tags
FQP19N1, FQP19, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 19A 3-Pin (3+Tab) TO-220 Rail
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:76A; No. of Pins:3; Pin Configuration:G(1),D(2)S(3); Power Dissipation:75W; Power, Pd:75W; Resistance, Rds on Max:0.1ohm; Resistance, Rds on Typ.:0.078ohm; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:2°C/W; Typ Capacitance Ciss:600pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V
Teil # Mfg. Beschreibung Aktie Preis
FQP19N10
DISTI # FQP19N10-ND		ON SemiconductorMOSFET N-CH 100V 19A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    FQP19N10L
    DISTI # FQP19N10L-ND    		ON SemiconductorMOSFET N-CH 100V 19A TO-220
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Limited Supply - Call
      FQP19N10L
      DISTI # FQP19N10L      		ON SemiconductorTrans MOSFET N-CH 100V 19A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: FQP19N10L)
      RoHS: Compliant
      Min Qty: 893
      Container: Bulk      		Americas - 0
      • 8930:$0.3449
      • 4465:$0.3539
      • 2679:$0.3579
      • 1786:$0.3629
      • 893:$0.3659
      FQP19N10
      DISTI # 512-FQP19N10      		ON SemiconductorMOSFET 100V N-Channel QFET
      RoHS: Compliant      		0
        FQP19N10L
        DISTI # 512-FQP19N10L        		ON SemiconductorMOSFET 100V N-Ch QFET Logic Level
        RoHS: Compliant        		0
          FQP19N10LFairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		2071
          • 1000:$0.3700
          • 500:$0.3900
          • 100:$0.4000
          • 25:$0.4200
          • 1:$0.4500
          FQP19N10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		15
            Bild Teil # Beschreibung
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            OMO.#: OMO-FQP12P20C-1190

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            OMO.#: OMO-FQP13N06L-FQP13N06-1190

            		 Neu und Original
            FQP13N10.

            Mfr.#: FQP13N10.

            OMO.#: OMO-FQP13N10--1190

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            Mfr.#: FQP13N50C,13N50C,

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            Mfr.#: FQP17P06

            OMO.#: OMO-FQP17P06-ON-SEMICONDUCTOR

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            Mfr.#: FQP1N50

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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3000
            Menge eingeben:
            Der aktuelle Preis von FQP19N10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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