BSC026N08NS5ATMA1

BSC026N08NS5ATMA1
Mfr. #:
BSC026N08NS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 100A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC026N08NS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC026N08NS5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
3.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
74 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
60 S
Entwicklungs-Kit:
EVAL_1K4W_ZVS_FB_CFD7, EVAL_800W_ZVS_FB_CFD7
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
14 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
47 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
BSC026N08NS5 SP001154276
Gewichtseinheit:
0.017870 oz
Tags
BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
BSC026N08NS5 Series 80 V 23 A OptiMOSTM5 Power-Transistor - PG-TDSON-8
***ark
Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC026N08NS5ATMA1
DISTI # V72:2272_06378264
Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4304
  • 3000:$1.2330
  • 1000:$1.2880
  • 500:$1.5230
  • 250:$1.7150
  • 100:$1.7340
  • 25:$2.0930
  • 10:$2.2500
  • 1:$2.5270
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6In Stock
  • 1000:$1.5875
  • 500:$1.9159
  • 100:$2.4633
  • 10:$3.0650
  • 1:$3.3900
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6In Stock
  • 1000:$1.5875
  • 500:$1.9159
  • 100:$2.4633
  • 10:$3.0650
  • 1:$3.3900
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 80V 23A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$1.3818
BSC026N08NS5ATMA1
DISTI # 31274170
Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant
4304
  • 3000:$1.2740
  • 1000:$1.2940
  • 500:$1.5310
  • 250:$1.7250
  • 100:$1.7440
  • 25:$2.1070
  • 10:$2.2660
  • 5:$2.5460
BSC026N08NS5ATMA1
DISTI # BSC026N08NS5ATMA1/SAMPLE
Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1/SAMPLE)
RoHS: Compliant
Container: Reel
Americas - 0
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.2900
    • 10000:$1.2900
    • 20000:$1.1900
    • 30000:$1.1900
    • 50000:$1.1900
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R - Tape and Reel (Alt: BSC026N08NS5ATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel
    Americas - 0
    • 5000:$1.2900
    • 10000:$1.2900
    • 20000:$1.2900
    • 30000:$1.2900
    • 50000:$1.2900
    BSC026N08NS5ATMA1
    DISTI # BSC026N08NS5
    Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin SuperSO T/R (Alt: BSC026N08NS5)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel
    Asia - 0
      BSC026N08NS5ATMA1
      DISTI # 13AC8328
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes0
      • 1:$3.1000
      • 10:$2.6700
      • 25:$2.5600
      • 50:$2.4600
      • 100:$2.3500
      • 250:$2.2400
      • 500:$2.0400
      • 1000:$1.7500
      BSC026N08NS5ATMA1
      DISTI # 726-BSC026N08NS5ATMA
      Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8
      RoHS: Compliant
      104
      • 1:$2.8500
      • 10:$2.4200
      • 100:$1.9400
      • 500:$1.7000
      • 1000:$1.4100
      • 2500:$1.3100
      • 5000:$1.2600
      BSC026N08NS5ATMA1
      DISTI # C1S322000662377
      Infineon Technologies AGMOSFETs4354
      • 250:$1.7250
      • 100:$1.7440
      • 25:$2.1070
      • 10:$2.2660
      • 1:$2.5460
      BSC026N08NS5ATMA1
      DISTI # 2725805
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
      RoHS: Compliant
      0
      • 1:$5.4100
      • 10:$4.8900
      • 100:$3.9300
      • 500:$3.0600
      • 1000:$2.5400
      BSC026N08NS5ATMA1
      DISTI # 2725805
      Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
      RoHS: Compliant
      0
      • 1:£2.5400
      • 10:£1.9100
      • 100:£1.5400
      • 250:£1.4400
      • 500:£1.3400
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von BSC026N08NS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,84 $
      2,84 $
      10
      2,41 $
      24,10 $
      100
      1,93 $
      193,00 $
      500
      1,69 $
      845,00 $
      1000
      1,40 $
      1 400,00 $
      2500
      1,30 $
      3 250,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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