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SI3403DV-T1-GE3

SI3403DV-T1-GE3
Mfr. #:
SI3403DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
RF Bipolar Transistors MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3403DV-T1-GE3 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
SI3403DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VIS
Produktkategorie
IC-Chips
Verpackung
Spule
Teil-Aliasnamen
SI3403DV-GE3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
TSOP-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
2 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
4 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Widerstand
70 mOhms
Transistor-Polarität
P-Kanal
Tags
SI3403, SI340, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3403DV-T1-GE3
DISTI # 781-SI3403DV-GE3		Vishay IntertechnologiesMOSFET 20V 5.0A 3.2W 70mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
Bild Teil # Beschreibung
SI3403DV-T1-GE3

Mfr.#: SI3403DV-T1-GE3

OMO.#: OMO-SI3403DV-T1-GE3

 MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V
SI3403DV-T1-E3

Mfr.#: SI3403DV-T1-E3

OMO.#: OMO-SI3403DV-T1-E3

 MOSFET 20V 5.0A 3.2W
SI3403DV-T1-GE3

Mfr.#: SI3403DV-T1-GE3

OMO.#: OMO-SI3403DV-T1-GE3-317

 RF Bipolar Transistors MOSFET 20V 5.0A 3.2W 70mohm @ 4.5V
SI3403DV-T1-E3

Mfr.#: SI3403DV-T1-E3

OMO.#: OMO-SI3403DV-T1-E3-317

 RF Bipolar Transistors MOSFET 20V 5.0A 3.2W
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SI3403DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,46 $
0,46 $
10
0,44 $
4,42 $
100
0,42 $
41,85 $
500
0,40 $
197,65 $
1000
0,37 $
372,00 $
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