SIZ320DT-T1-GE3

SIZ320DT-T1-GE3
Mfr. #:
SIZ320DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ320DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ320DT-T1-GE3 DatasheetSIZ320DT-T1-GE3 Datasheet (P4-P6)SIZ320DT-T1-GE3 Datasheet (P7-P9)SIZ320DT-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
SIZ320DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-3x3-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
30 A, 40 A
Rds On - Drain-Source-Widerstand:
4.24 mOhms, 8.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.4 V
Vgs - Gate-Source-Spannung:
- 12 V, 16 V
Qg - Gate-Ladung:
9.5 nC, 17.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
16.7 W, 31 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
45 S, 68 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
28 ns, 45 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns, 20 ns
Typische Einschaltverzögerungszeit:
8 ns, 12 ns
Tags
SiZ32, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Channel 25V 30A@Q1/40A@Q2 9-Pin PowerPAIR T/R
***i-Key
MOSFET 2N-CH 25V 30/40A 8POWER33
***ark
Dual N-Channel 25-V (D-S) Mosfet
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIZ320DT-T1-GE3
DISTI # V36:1790_17600287
Vishay IntertechnologiesDUAL N-CHANNEL 25-V (D-S) MOSFET0
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3CT-ND
    Vishay SiliconixMOSFET 2 N-CHANNEL 25V 8-POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    5860In Stock
    • 1000:$0.4333
    • 500:$0.5416
    • 100:$0.7311
    • 10:$0.9480
    • 1:$1.0800
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3DKR-ND
    Vishay SiliconixMOSFET 2 N-CHANNEL 25V 8-POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    5860In Stock
    • 1000:$0.4333
    • 500:$0.5416
    • 100:$0.7311
    • 10:$0.9480
    • 1:$1.0800
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3TR-ND
    Vishay SiliconixMOSFET 2N-CH 25V 30/40A 8POWER33
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    3000In Stock
    • 15000:$0.3418
    • 6000:$0.3549
    • 3000:$0.3812
    SIZ320DT-T1-GE3
    DISTI # SIZ320DT-T1-GE3
    Vishay IntertechnologiesMOSFET Dual N-Channel 25V 30A@Q1/40A@Q2 9-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ320DT-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 6000:$0.3469
    • 12000:$0.3369
    • 18000:$0.3229
    • 30000:$0.3139
    • 60000:$0.3059
    SIZ320DT-T1-GE3
    DISTI # 20AC3919
    Vishay IntertechnologiesDUAL N-CHANNEL 25-V (D-S) MOSFET0
    • 50000:$0.3090
    • 30000:$0.3230
    • 20000:$0.3470
    • 10000:$0.3710
    • 5000:$0.4020
    • 1:$0.4110
    SIZ320DT-T1-GE3
    DISTI # 78-SIZ320DT-T1-GE3
    Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAIR 3 x 3
    RoHS: Compliant
    5959
    • 1:$0.9500
    • 10:$0.7630
    • 100:$0.5790
    • 500:$0.4780
    • 1000:$0.3830
    • 3000:$0.3470
    • 6000:$0.3230
    • 9000:$0.3110
    • 24000:$0.2990
    Bild Teil # Beschreibung
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    Mfr.#: SMBJ43A-E3/52

    OMO.#: OMO-SMBJ43A-E3-52

    TVS Diodes / ESD Suppressors 43V 1000W UniDir TransZorb 5% Tol
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    Mfr.#: ES3A

    OMO.#: OMO-ES3A

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    Multilayer Ceramic Capacitors MLCC - SMD/SMT 63V 0.47uF X7R 1206 10%
    SMBJ43A-E3/52

    Mfr.#: SMBJ43A-E3/52

    OMO.#: OMO-SMBJ43A-E3-52-VISHAY

    TVS Diodes - Transient Voltage Suppressors 600W 43V 5% Uni
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    OMO.#: OMO-ESDA18-1K-STMICROELECTRONICS

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    SUPER BARRIER RECTIFIER X2-DFN10
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SIZ320DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,95 $
    0,95 $
    10
    0,76 $
    7,63 $
    100
    0,58 $
    57,90 $
    500
    0,48 $
    239,00 $
    1000
    0,38 $
    383,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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