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IRL2203NPBF

IRL2203NPBF
Mfr. #:
IRL2203NPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL2203NPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL2203NPBF DatasheetIRL2203NPBF Datasheet (P4-P6)IRL2203NPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRL2203NPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
40 nC
Pd - Verlustleistung:
130 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001573688
Gewichtseinheit:
0.211644 oz
Tags
IRL2203NP, IRL2203N, IRL2203, IRL22, IRL2, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
***ied Electronics & Automation
MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRL2203NPBF
DISTI # 30155550		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube4882
  • 1000:$0.5808
  • 500:$0.6192
  • 250:$0.6384
  • 100:$0.6672
  • 25:$0.7104
IRL2203NPBF
DISTI # IRL2203NPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 116A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1447In Stock
  • 1000:$0.7202
  • 500:$0.9123
  • 100:$1.1764
  • 50:$1.3444
  • 1:$1.6800
IRL2203NPBF
DISTI # C1S322000501234		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4882
  • 2000:$0.6690
  • 1000:$0.7210
  • 500:$0.9420
  • 100:$1.0200
  • 25:$1.2400
  • 5:$1.5300
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: IRL2203NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 450
  • 1000:$0.4275
  • 2000:$0.4099
  • 3000:$0.4044
  • 5000:$0.3886
  • 10000:$0.3836
  • 25000:$0.3741
  • 50000:$0.3649
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL2203NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 335
  • 1:$0.9549
  • 10:$0.8809
  • 25:$0.8779
  • 50:$0.8759
  • 100:$0.7249
  • 500:$0.5659
  • 1000:$0.5089
IRL2203NPBF
DISTI # SP001573688		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(3+Tab) TO-220AB (Alt: SP001573688)
RoHS: Compliant
Min Qty: 1		Europe - 1900
  • 1:€1.2339
  • 10:€0.9699
  • 25:€0.9229
  • 50:€0.9209
  • 100:€0.8029
  • 500:€0.7099
  • 1000:€0.5599
IRL2203NPBF
DISTI # 63J7734		Infineon Technologies AGN CHANNEL MOSFET, 30V, 116A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:116A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,MSL:- RoHS Compliant: Yes95
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9390
  • 500:$0.8300
  • 1000:$0.6550
  • 2500:$0.5810
  • 10000:$0.5590
IRL2203NPBF
DISTI # 70018523		Infineon Technologies AGIRL2203NPBF N-channel MOSFET Transistor,116 A,30 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 750:$1.8770
IRL2203NPBFInfineon Technologies AGSingle N-Channel 30 V 7 mOhm 60 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		600Tube
  • 25:$0.7400
  • 250:$0.5200
  • 1000:$0.4750
  • 2000:$0.4550
IRL2203NPBFInternational Rectifier 
RoHS: Not Compliant		590
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
IRL2203NPBF
DISTI # 942-IRL2203NPBF		Infineon Technologies AGMOSFET MOSFT 30V 100A 7mOhm 40nC Log LvlAB
RoHS: Compliant		1065
  • 1:$1.4400
  • 10:$1.2300
  • 100:$0.9390
  • 500:$0.8300
  • 1000:$0.6550
  • 2500:$0.5810
  • 10000:$0.5590
IRL2203NPBF
DISTI # 5409985		Infineon Technologies AGMOSFET N-CHANNEL 30V 116A TO220AB, EA200
  • 1:£2.0000
  • 10:£0.7200
  • 25:£0.7100
IRL2203NPBF
DISTI # 5409985P		Infineon Technologies AGMOSFET N-CHANNEL 30V 116A TO220AB, TU1800
  • 10:£0.7200
  • 25:£0.7100
IRL2203NPBFInternational RectifierMOSFET Transistor, N-Channel, TO-220AB200
  • 131:$1.0395
  • 50:$1.1550
  • 1:$2.3100
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,100A,130W,TO220AB1669
  • 1:$1.1900
  • 3:$1.1000
  • 10:$0.8900
  • 50:$0.8100
IRL2203NPBF
DISTI # TMOSP12538		Infineon Technologies AGN-CH 30V 116A 7mOhm TO220-3
RoHS: Compliant		Stock DE - 1500Stock US - 0
  • 50:$0.9177
  • 150:$0.8653
  • 300:$0.8128
  • 600:$0.7342
  • 1000:$0.7079
IRL2203NPBF
DISTI # IRL2203NPBF		Infineon Technologies AGN-LogL 30V 75A 180W 0,007R TO220AB
RoHS: Compliant		1010
  • 10:€0.8480
  • 50:€0.6080
  • 200:€0.5480
  • 500:€0.5276
IRL2203NPBF
DISTI # 8650896		Infineon Technologies AGMOSFET, N, 30V, 100A, TO-220
RoHS: Compliant		1092
  • 5:£0.7340
  • 25:£0.7240
  • 100:£0.7090
  • 250:£0.6930
  • 500:£0.6410
IRL2203NPBF
DISTI # XSLY00000001130		INFINEON/IRTO-220AB
RoHS: Compliant		17460
  • 1350:$0.5214
  • 17460:$0.4867
IRL2203NPBF
DISTI # XSFP00000020523		Infineon Technologies AGInsulated Gate Bipolar Transistor, 117AI(C),1200VV(BR)CES, N-Channel, TO-247AC
RoHS: Compliant		22748
  • 150:$1.4800
  • 22748:$1.3500
IRL2203NPBF
DISTI # 2565899		International RectifierN CHANNEL MOSFET, 30V, 116A, TO-220AB
RoHS: Compliant		95
  • 1:$2.2800
  • 10:$1.9500
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0400
  • 2500:$0.9200
  • 10000:$0.9040
IRL2203NPBF
DISTI # 8650896		Infineon Technologies AGMOSFET, N, 30V, 100A, TO-220
RoHS: Compliant		1101
  • 1:$2.0000
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 DIODE ARRAY SCHOTTKY 60V TO220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1991
Menge eingeben:
Der aktuelle Preis von IRL2203NPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,43 $
1,43 $
10
1,22 $
12,20 $
100
0,94 $
93,90 $
500
0,83 $
415,00 $
1000
0,66 $
655,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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