FDS8670

Mfr. #:: FDS8670
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 30V 21A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS8670 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Tags: FDS8670, FDS867, FDS86, FDS8, FDS

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS8670 Beschreibung

***et: Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:105A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This device has been designed specifically to improvethe efficiency of DC-DC converters. Using newtechniques in MOSFET construction, the variouscomponents of gate charge and capacitance have beenoptimized to reduce switching losses. Low gateresistance and very low Miller charge enable excellentperformance with both adaptive and fixed dead timegate drive circuits. Very low Rds(on) has beenmaintained to provide an extremely versatile device.

***ure Electronics: N-Channel 30 V 3.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***ark: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,21A I(D),SO

***et Europe: Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm;

***rchild Semiconductor: The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6699S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

***nell: MOSFET, N, SMD, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 2.5mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 106A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ark: Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***ure Electronics: Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R / MOSFET N-CH 30V 21A 8-SOIC

***nell: MOSFET, N-CH 30V 21A SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 21A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.35V

***ark: Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant: Yes

***icroelectronics: N-channel 30 V, 0.0038 Ohm, 26 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET

***nell: MOSFET, N-CH, 30V, 26A, 8-SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

***roFlash: Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

***nell: MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi

***ure Electronics: N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ

***Yang: Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

***ment14 APAC: MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS8670 DISTI # FDS8670TR-ND	ON Semiconductor	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS8670 DISTI # FDS8670CT-ND	ON Semiconductor	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDS8670 DISTI # FDS8670DKR-ND	ON Semiconductor	MOSFET N-CH 30V 21A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDS8670 DISTI # FDS8670	ON Semiconductor	Trans MOSFET N-CH 30V 21A 8-Pin SOIC N T/R - Bulk (Alt: FDS8670) RoHS: Compliant Min Qty: 463 Container: Bulk	Americas - 0	4630:$0.6659 2315:$0.6829 1389:$0.6919 926:$0.7009 463:$0.7049
FDS8670 DISTI # 512-FDS8670	ON Semiconductor	MOSFET 30V N-CHANNEL POWERTRENCH MOSFET RoHS: Compliant	0
FDS8670	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	25418	1000:$0.7100 500:$0.7500 100:$0.7800 25:$0.8100 1:$0.8700
FDS8670	Fairchild Semiconductor Corporation	21 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET	36	20:$1.0800 4:$1.3500 1:$1.6200
FDS8670 DISTI # 1228335	ON Semiconductor	RoHS: Compliant	0	250:$1.8900 100:$2.5500 10:$3.2300 1:$4.5400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS6990A OMO.#: OMO-FDS6990A	MOSFET SO-8 DUAL N-CH 30V
	Mfr.#: FDS8984-F085 OMO.#: OMO-FDS8984-F085	MOSFET NCH PWR TRNCH MOSFET
	Mfr.#: FDS8958A-F085 OMO.#: OMO-FDS8958A-F085	MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET
	Mfr.#: FDS6994S OMO.#: OMO-FDS6994S	MOSFET NChannel PowerTrench Notebook Power
	Mfr.#: FDS01201 OMO.#: OMO-FDS01201-1190	Neu und Original
	Mfr.#: FDS4070N7 OMO.#: OMO-FDS4070N7-ON-SEMICONDUCTOR	MOSFET N-CH 40V 15.3A 8-SOIC
	Mfr.#: FDS5672A-NL OMO.#: OMO-FDS5672A-NL-1190	Neu und Original
	Mfr.#: FDS8333C OMO.#: OMO-FDS8333C-ON-SEMICONDUCTOR	MOSFET N/P-CH 30V 8SOIC
	Mfr.#: FDS8958 OMO.#: OMO-FDS8958-ON-SEMICONDUCTOR	MOSFET N/P-CH 30V 7A/5A 8SOIC
	Mfr.#: FDS9933A-NL OMO.#: OMO-FDS9933A-NL-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von FDS8670 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS8670 4
FDS867 8
FDS86 31
FDS8 224
FDS 1298

FDS8670

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes