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FJV3114RMTF

FJV3114RMTF
Mfr. #:
FJV3114RMTF
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FJV3114RMTF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
NPN
Typischer Eingangswiderstand:
4.7 kOhms
Typisches Widerstandsverhältnis:
0.1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
DC-Kollektor/Basisverstärkung hfe Min:
68
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
0.1 A
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
200 mW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FJV3114R
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
68
Emitter- Basisspannung VEBO:
10 V
Höhe:
0.93 mm
Länge:
2.92 mm
Typ:
Epitaxialer NPN-Siliziumtransistor
Breite:
1.3 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000282 oz
Tags
FJV3114, FJV311, FJV31, FJV3, FJV
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***ment14 APAC
TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***nell
TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47ko
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***ark
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),sot-23 Rohs Compliant: Yes
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***th Star Micro
NPN Epitaxial Silicon Transistor Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22KW, R2=22KW) Complement to FJV4103R
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***ure Electronics
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel
*** Stop Electro
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***(Formerly Allied Electronics)
NPN Pre-Biased Signal Transistor SOT-23
***ure Electronics
DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
*** Source Electronics
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ark
Rf Transistor, Npn, 50V, 0.1A, Sot-23 Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ure Electronics
DDTC Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3
***ical
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R
Teil # Mfg. Beschreibung Aktie Preis
FJV3114RMTF
DISTI # V72:2272_06301064		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST18000
  • 15000:$0.0230
  • 6000:$0.0242
  • 3000:$0.0276
  • 1000:$0.0349
  • 500:$0.0438
  • 250:$0.0443
  • 100:$0.0446
  • 25:$0.1359
  • 10:$0.1373
  • 1:$0.2090
FJV3114RMTF
DISTI # FJV3114RMTFCT-ND		ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3221In Stock
  • 1000:$0.0447
  • 500:$0.0657
  • 100:$0.0999
  • 10:$0.1880
  • 1:$0.2300
FJV3114RMTF
DISTI # FJV3114RMTFDKR-ND		ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3221In Stock
  • 1000:$0.0447
  • 500:$0.0657
  • 100:$0.0999
  • 10:$0.1880
  • 1:$0.2300
FJV3114RMTF
DISTI # FJV3114RMTFTR-ND		ON SemiconductorTRANS PREBIAS NPN 200MW SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150000:$0.0227
  • 75000:$0.0255
  • 30000:$0.0272
  • 15000:$0.0289
  • 6000:$0.0340
  • 3000:$0.0391
FJV3114RMTF
DISTI # 25631820		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST75000
  • 30000:$0.0195
  • 18000:$0.0207
  • 12000:$0.0214
  • 6000:$0.0233
  • 3000:$0.0252
FJV3114RMTF
DISTI # 30200058		ON SemiconductorNPN EPITAXIAL SILICON TRANSIST18000
  • 15000:$0.0230
  • 6000:$0.0242
  • 3000:$0.0275
  • 1000:$0.0349
  • 500:$0.0438
  • 251:$0.0443
FJV3114RMTF
DISTI # FJV3114RMTF		ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel (Alt: FJV3114RMTF)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 27000
  • 3000:$0.0297
  • 6000:$0.0274
  • 12000:$0.0252
  • 18000:$0.0243
  • 30000:$0.0230
FJV3114RMTF.
DISTI # 23AC5262		Fairchild Semiconductor CorporationNPN/50V/100MA/4.7K 47K ROHS COMPLIANT: YES0
  • 1:$0.0360
  • 3000:$0.0340
  • 6000:$0.0330
  • 12000:$0.0310
FJV3114RMTFFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RoHS: Compliant		29415
  • 1:$0.0300
  • 25:$0.0300
  • 100:$0.0300
  • 500:$0.0300
  • 1000:$0.0300
FJV3114RMTF
DISTI # 512-FJV3114RMTF		ON SemiconductorBipolar Transistors - Pre-Biased 50V/100mA/4.7K 47K
RoHS: Compliant		11987
  • 1:$0.2200
  • 10:$0.1460
  • 100:$0.0610
  • 1000:$0.0420
  • 3000:$0.0330
  • 9000:$0.0280
  • 24000:$0.0260
  • 45000:$0.0250
FJV3114RMTF
DISTI # 8070956P		ON SemiconductorTRANSISTORFAIRCHILDFJV3114RMTF, RL7600
  • 1000:£0.0250
  • 2000:£0.0210
  • 10000:£0.0170
  • 20000:£0.0160
FJV3114RMTF
DISTI # C1S541901600574		ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
RoHS: Compliant		18000
  • 250:$0.0522
  • 100:$0.0580
Bild Teil # Beschreibung
BAT54W-G3-08

Mfr.#: BAT54W-G3-08

OMO.#: OMO-BAT54W-G3-08

 Schottky Diodes & Rectifiers 30Volt 200mA Single
BZG05C18-M3-08

Mfr.#: BZG05C18-M3-08

OMO.#: OMO-BZG05C18-M3-08

 Zener Diodes Uni-direc 40W Pppm SMA (DO-214AC)
BZT52C5V1-E3-08

Mfr.#: BZT52C5V1-E3-08

OMO.#: OMO-BZT52C5V1-E3-08

 Zener Diodes 5.1 Volt 0.5W 5%
BAV21W-E3-18

Mfr.#: BAV21W-E3-18

OMO.#: OMO-BAV21W-E3-18

 Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
VS-6DKH02-M3/H

Mfr.#: VS-6DKH02-M3/H

OMO.#: OMO-VS-6DKH02-M3-H

 Rectifiers 200V 3+3A Flat Pak FRED
FDD5614P

Mfr.#: FDD5614P

OMO.#: OMO-FDD5614P

 MOSFET 60V P-Ch PowerTrench
FDN340P

Mfr.#: FDN340P

OMO.#: OMO-FDN340P

 MOSFET SSOT-3 P-CH -20V
ATSAML21G18B-MUT

Mfr.#: ATSAML21G18B-MUT

OMO.#: OMO-ATSAML21G18B-MUT

 ARM Microcontrollers - MCU ARM Cortex-M0+ 128KBFlash 24KB SRAM
VS-6DKH02-M3/H

Mfr.#: VS-6DKH02-M3/H

OMO.#: OMO-VS-6DKH02-M3-H-VISHAY

 DIODE ARRAY GP 200V 3A FLATPAK
ATSAML21G18B-MUT

Mfr.#: ATSAML21G18B-MUT

OMO.#: OMO-ATSAML21G18B-MUT-MICROCHIP-TECHNOLOGY

 Microcontrollers - MCU ARM Microcontrollers - MCU ARM Cortex-M0+ 128KBFlash 24KB SRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von FJV3114RMTF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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