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AFT26H250-24SR6

AFT26H250-24SR6
Mfr. #:
AFT26H250-24SR6
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AFT26H250-24SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Spule
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Teil # Aliase:
935323547128
Gewichtseinheit:
0.302494 oz
Tags
AFT26H25, AFT26H2, AFT26H, AFT26, AFT2, AFT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ca Corp
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
*** Semiconductors SCT
Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 50 W Avg., 28 V, CFM6F, RoHS
***W
RF Power Transistor,2496 to 2690 MHz, 230 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1800
*** Electronic Components
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
***ical
Trans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R
***el Electronic
Linear Voltage Regulator, LDO, Low Power, 100 mA Vout: 5.0 V; 0.5%
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
FET RF NCH 65V 2690MHZ NI12304S2
***or
FET RF 2CH 65V 2.5GHZ NI1230S-4
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***ure Electronics
P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23
***ical
Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
***ark
N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
***SIT Distribution GmbH
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA
***emi
N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ
***ment14 APAC
MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance
***roFlash
Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ark
Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes
***ure Electronics
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
***ment14 APAC
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
***nell
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Teil # Mfg. Beschreibung Aktie Preis
AFT26H250-24SR6
DISTI # AFT26H250-24SR6-ND		NXP SemiconductorsFET RF 2CH 65V 2.5GHZ NI1230S-4
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$113.3879
AFT26H250-24SR6
DISTI # AFT26H250-24SR6		NXP SemiconductorsTrans MOSFET N-CH 65V 6-Pin NI-1230S T/R (Alt: AFT26H250-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel		Europe - 0
  • 150:€123.5900
  • 300:€118.5900
  • 600:€114.0900
  • 900:€105.8900
  • 1500:€98.8900
AFT26H250-24SR6
DISTI # AFT26H250-24SR6		NXP SemiconductorsTrans MOSFET N-CH 65V 6-Pin NI-1230S T/R - Tape and Reel (Alt: AFT26H250-24SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$124.1900
  • 300:$119.3900
  • 600:$114.6900
  • 900:$110.4900
  • 1500:$108.3900
AFT26H250-24SR6
DISTI # 841-AFT26H250-24SR6		NXP SemiconductorsRF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
RoHS: Compliant		0
  • 1:$136.1300
  • 5:$133.4900
  • 10:$129.0800
  • 25:$123.6100
  • 50:$121.9200
  • 100:$113.3900
  • 150:$110.8400
AFT26H250-24SR6
DISTI # AFT26H250-24SR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 150:$127.8800
Bild Teil # Beschreibung
AFT26H250-24SR6

Mfr.#: AFT26H250-24SR6

OMO.#: OMO-AFT26H250-24SR6

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H200W03SR6

Mfr.#: AFT26H200W03SR6

OMO.#: OMO-AFT26H200W03SR6

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H250W03SR6

Mfr.#: AFT26H250W03SR6

OMO.#: OMO-AFT26H250W03SR6

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H250-24SR6

Mfr.#: AFT26H250-24SR6

OMO.#: OMO-AFT26H250-24SR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H250W03SR6

Mfr.#: AFT26H250W03SR6

OMO.#: OMO-AFT26H250W03SR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H200W03SR6

Mfr.#: AFT26H200W03SR6

OMO.#: OMO-AFT26H200W03SR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
AFT26H200W03S

Mfr.#: AFT26H200W03S

OMO.#: OMO-AFT26H200W03S-1190

 Neu und Original
AFT26H250-24S

Mfr.#: AFT26H250-24S

OMO.#: OMO-AFT26H250-24S-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von AFT26H250-24SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
136,13 $
136,13 $
5
133,49 $
667,45 $
10
129,08 $
1 290,80 $
25
123,61 $
3 090,25 $
50
121,92 $
6 096,00 $
100
113,39 $
11 339,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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