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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 80A TO262-3 RoHS: Compliant Min Qty: 1 Container: Tube | 609In Stock |
|
IPI086N10N3GXK DISTI # IPI086N10N3GXKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube | Americas - 1000 |
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IPI086N10N3G DISTI # SP000683070 | Infineon Technologies AG | Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: SP000683070) RoHS: Compliant Min Qty: 1 Container: Tube | Europe - 0 |
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IPI086N10N3GXKSA1 DISTI # 34AC1700 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0074ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power RoHS Compliant: Yes | 361 |
|
IPI086N10N3G | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 15500 |
|
IPI086N10N3GXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 100V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 800 |
|
IPI086N10N3 G DISTI # 726-IPI086N10N3G | Infineon Technologies AG | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 RoHS: Compliant | 398 |
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IPI086N10N3G | Infineon Technologies AG | 2000 | ||
IPI086N10N3GXKSA1 DISTI # 8922166 | Infineon Technologies AG | MOSFET N-CHANNEL 100V 80A OPTIMOS TO262, PK | 340 |
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IPI086N10N3GXKSA1 DISTI # IPI086N10N3GXKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO262-3 | 206 |
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IPI086N10N3GXKSA1 DISTI # 2781092 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant | 361 |
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IPI086N10N3GXKSA1 DISTI # 2781092 | Infineon Technologies AG | MOSFET, N-CH, 100V, 80A, TO-262 RoHS: Compliant | 361 |
|
Bild | Teil # | Beschreibung |
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Mfr.#: 70T651S10BFG OMO.#: OMO-70T651S10BFG |
SRAM 256K x 36 Async 3.3V 2.5V Dual-Port RAM | |
Mfr.#: IRF540ZPBF OMO.#: OMO-IRF540ZPBF |
MOSFET MOSFT 100V 36A 26.5mOhm 42nC Qg | |
Mfr.#: LMZ34002RKGR OMO.#: OMO-LMZ34002RKGR |
Switching Voltage Regulators 15W Neg Out Pwr Mod w/ 4.5V-40V Input | |
Mfr.#: LT3958EUHE#PBF OMO.#: OMO-LT3958EUHE-PBF |
Switching Voltage Regulators High Input Voltage, Boost, Flyback, SEPIC, and Inverting Converter | |
Mfr.#: 2652 OMO.#: OMO-2652 |
Temperature Sensor Development Tools BME280 or SPI Temp Humidity Press. SNSR | |
Mfr.#: 2652 OMO.#: OMO-2652-ADAFRUIT |
Washer Flat 2.36mm-ID 6.35mm-OD 0.79mm-THK Nylon | |
Mfr.#: LMZ34002RKGR |
Non-Isolated DC/DC Converters 15W Neg Out Pwr Mod w/ 4.5V-40V Input | |
Mfr.#: 904 OMO.#: OMO-904-KEYSTONE-ELECTRONICS |
Terminals LUG LOCKING MATTE TINNED#6 | |
Mfr.#: MA4E1339B1-287T OMO.#: OMO-MA4E1339B1-287T-112 |
Schottky Diodes & Rectifiers | |
Mfr.#: ADALM2000 OMO.#: OMO-ADALM2000-ANALOG-DEVICES |
ADVANCED ACTIVE LEARNING MODULE |