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IRFH7934TRPBF

IRFH7934TRPBF
Mfr. #:
IRFH7934TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH7934TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH7934TRPBF DatasheetIRFH7934TRPBF Datasheet (P4-P6)IRFH7934TRPBF Datasheet (P7-P9)IRFH7934TRPBF Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRFH7934TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
76 A
Rds On - Drain-Source-Widerstand:
3.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Pd - Verlustleistung:
3.1 W
Aufbau:
Single
Handelsname:
StarkIRFET
Verpackung:
Spule
Höhe:
0.83 mm
Länge:
6 mm
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Infineon-Technologien
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001570924
Tags
IRFH7934, IRFH793, IRFH79, IRFH7, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***ure Electronics
Single N-Channel 30 V 3.5 mOhm 30 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***Yang
Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel
***(Formerly Allied Electronics)
MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ment14 APAC
MOSFET, N CH, 30V, 24A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 4.2 mOhm 31 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 93A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
Power MOSFET 30V 90A 4 mOhm Single N-Channel SO-8FL
***ser
MOSFETs- Power and Small Signal NFET 30V 90A 4MOHM
***et
Trans MOSFET N-CH 30V 18A 8-Pin SO-FL T/R
***th Star Micro
Power MOSFET 30 V 90 A Single N-Channel SO-8 FL
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
NTMFS4836NT1G, SINGLE MOSFETS;
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):2.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ark
TAPE AND REEL // MOSFET, 30V, 50A, 4.1 mOhm, 15nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 23A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***nell
MOSFET, N-CH, 30V, 50A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R
***icontronic
Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO252-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK
***r Electronics
Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-DPAK ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 91A 3.3 mOhm Single N-Channel Thermally Enhanced SO-8FL T3 30V 20V NCH
***et
Trans MOSFET N-CH 30V 38.8A 8-Pin DFN EP T/R
***r Electronics
Small Signal Field-Effect Transistor, 12.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 12.7A/91A 5DFN
***el Electronic
RES SMD 18.2K OHM 1% 1/4W 1210
***nell
NTMFS4923NET3G, SINGLE MOSFETS;
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFH7934TRPBF
DISTI # 31066294		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin PQFN T/R
RoHS: Compliant		4000
  • 4000:$0.5299
IRFH7934TRPBF
DISTI # IRFH7934TRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 24A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.5659
IRFH7934TRPBF
DISTI # IRFH7934TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH7934TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.4229
  • 8000:$0.4079
  • 16000:$0.3929
  • 24000:$0.3799
  • 40000:$0.3729
IRFH7934TRPBF
DISTI # SP001570924		Infineon Technologies AGTrans MOSFET N-CH 30V 24A 8-Pin PQFN T/R (Alt: SP001570924)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.5999
  • 8000:€0.4899
  • 16000:€0.4499
  • 24000:€0.4149
  • 40000:€0.3849
IRFH7934TRPBF.
DISTI # 32AC0693		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:3.1W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.4230
  • 8000:$0.4080
  • 16000:$0.3930
  • 24000:$0.3930
  • 40000:$0.3930
IRFH7934TRPBF
DISTI # 70019708		Infineon Technologies AGMOSFET,30V,24A,3.5 MOHM,20 NC QG,PQFN56
RoHS: Compliant		0
  • 4000:$1.4100
  • 8000:$1.3820
  • 20000:$1.3400
  • 40000:$1.2830
  • 100000:$1.1990
IRFH7934TRPBF
DISTI # 942-IRFH7934TRPBF		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC
RoHS: Compliant		3998
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7910
  • 500:$0.6990
  • 1000:$0.5520
IRFH7934TRPBFInternational RectifierPower Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		4000
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRFH7934TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,20 $
    1,20 $
    10
    1,02 $
    10,20 $
    100
    0,79 $
    79,10 $
    500
    0,70 $
    349,50 $
    1000
    0,55 $
    552,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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