BSO211PNTMA1

Mfr. #:: BSO211PNTMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET 2P-CH 20V 4.7A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSO211PNTMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSO211PNTMA1 Datasheet BSO211PNTMA1 Datasheet (P4-P6)BSO211PNTMA1 Datasheet (P7-P8)
ECAD Model:

Produkteigenschaft
Attributwert

Tags: BSO211, BSO21, BSO2, BSO

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSO211PNTMA1 Beschreibung

***et: Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/R

*** Electronic Components: MOSFET 2P-CH 20V 4.7A 8SOIC

***i-Key Marketplace: POWER FIELD-EFFECT TRANSISTOR, 4

***ure Electronics: N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8

***C: Trans MOSFET N-CH 60V 5.7A 8-Pin SOIC T/R

***des Inc SCT: 60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***(Formerly Allied Electronics): IRF7341PBF Dual N-channel MOSFET Transistor; 4.7 A; 55 V; 8-Pin SOIC

***itex: Transistor: 2xN-MOSFET; unipolar; 55V; 4.7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8

***ure Electronics: Dual N-Channel 55 V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8

***et Japan: Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC T/R

***id Electronics: Transistor MOSFET 2xN-Ch. 55V 4,7A SO8 IRF 7341 TRPBF

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.043Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes

***icontronic: Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

***et: Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

***ure Electronics: SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.046Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pinsrohs Compliant: No

***ment14 APAC: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W

***ure Electronics: Dual P-Channel 60 V 70 mOhm 11.9 nC 1.2 W Silicon SMT Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual P-CH 60V 11.3A 8-Pin SOIC T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS

***ical: Trans MOSFET P-CH 60V 4.8A 8-Pin SO T/R

***(Formerly Allied Electronics): IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

***ineon SCT: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***i-Key: MOSFET P-CH 20V 2.3A 8-SOIC

***ser: MOSFETs- Power and Small Signal FETKY 20V.150R LL TR

***el Electronic: TRANS NPN 25V 0.2A SOT-346 SMT3

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSO211PHXUMA1 DISTI # V36:1790_06384673	Infineon Technologies AG	Trans MOSFET P-CH 20V 4A Automotive 8-Pin DSO T/R RoHS: Compliant	0	2500000:$0.3517 1250000:$0.3520 250000:$0.3802 25000:$0.4314 2500:$0.4400
BSO211PNTMA1 DISTI # BSO211PNTMA1CT-ND	Infineon Technologies AG	MOSFET 2P-CH 20V 4.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1380In Stock	1000:$0.5729 500:$0.6037 100:$0.6776 10:$0.7980 1:$0.9300
BSO211PNTMA1 DISTI # BSO211PNTMA1TR-ND	Infineon Technologies AG	MOSFET 2P-CH 20V 4.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
BSO211PHXUMA1 DISTI # BSO211PHXUMA1-ND	Infineon Technologies AG	MOSFET 2P-CH 20V 4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.4438
BSO211PHXUMA1 DISTI # 30283710	Infineon Technologies AG	Trans MOSFET P-CH 20V 4A Automotive 8-Pin DSO T/R RoHS: Compliant	2500	2500:$0.3218
BSO211P DISTI # BSO211P	Infineon Technologies AG	Trans MOSFET P-CH 20V 4.7A 8-Pin DSO - Bulk (Alt: BSO211P) RoHS: Not Compliant Min Qty: 1137 Container: Bulk	Americas - 0	11370:$0.2789 5685:$0.2839 3411:$0.2939 2274:$0.3049 1137:$0.3169
BSO211PNTMA1 DISTI # BSO211PNTMA1	Infineon Technologies AG	Trans MOSFET Dual P-CH 20V 4.7A 8-Pin PowerSO T/R - Bulk (Alt: BSO211PNTMA1) Min Qty: 893 Container: Bulk	Americas - 0	8930:$0.3549 4465:$0.3619 2679:$0.3739 1786:$0.3879 893:$0.4029
BSO211PHXUMA1 DISTI # BSO211PHXUMA1	Infineon Technologies AG	Trans MOSFET P-CH 20V 4A 8-Pin SO T/R - Tape and Reel (Alt: BSO211PHXUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3059 15000:$0.3119 10000:$0.3229 5000:$0.3349 2500:$0.3469
BSO211PHXUMA1 DISTI # BSO211PHXUMA1	Infineon Technologies AG	Trans MOSFET P-CH 20V 4A 8-Pin SO T/R - Bulk (Alt: BSO211PHXUMA1) RoHS: Compliant Min Qty: 1042 Container: Bulk	Americas - 0	10420:$0.3039 5210:$0.3099 3126:$0.3209 2084:$0.3329 1042:$0.3449
BSO211PHXUMA1 DISTI # SP000613844	Infineon Technologies AG	Trans MOSFET P-CH 20V 4A 8-Pin SO T/R (Alt: SP000613844) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3059 15000:€0.3289 10000:€0.3569 5000:€0.3889 2500:€0.4759
BSO211PHXUMA1 DISTI # 726-BSO211PHXUMA1	Infineon Technologies AG	MOSFET SMALL SIGNAL N-CH RoHS: Compliant	2500	1:$0.9900 10:$0.8460 100:$0.6500 500:$0.5740 1000:$0.4530 2500:$0.4020 10000:$0.3870
BSO211P DISTI # 726-BSO211P	Infineon Technologies AG	MOSFET P-Ch -20V 4.7A DSO-8 RoHS: Not compliant	0
BSO211P H DISTI # 726-BSO211PH	Infineon Technologies AG	MOSFET SMALL SIGNAL N-CH RoHS: Compliant	2431	1:$0.9900 10:$0.8460 100:$0.6500 500:$0.5740 1000:$0.4530
BSO211P	Infineon Technologies AG	Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	20000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
BSO211PHXUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	22500	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900
BSO211PNTMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	1012500	1000:$0.3700 500:$0.3900 100:$0.4000 25:$0.4200 1:$0.4500
BSO211PH	Infineon Technologies AG	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2500	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900
BSO211PHXUMA1 DISTI # BSO211PHXUMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-20V,-4.6A,1.6W,PG-DSO-8	2500	100:$0.4020 25:$0.4313 5:$0.4797 1:$0.5428
BSO211P	Infineon Technologies AG	-20V,-4.7A,Dual P-channel power MOSFET	1650	1:$0.5800 100:$0.4900 500:$0.4300 1000:$0.4200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSO211P H OMO.#: OMO-BSO211P-H	MOSFET SMALL SIGNAL N-CH
	Mfr.#: BSO211PHXUMA1 OMO.#: OMO-BSO211PHXUMA1	MOSFET SMALL SIGNAL N-CH
	Mfr.#: BSO211P OMO.#: OMO-BSO211P-1190	Trans MOSFET P-CH 20V 4.7A 8-Pin DSO - Bulk (Alt: BSO211P)
	Mfr.#: BSO211P H OMO.#: OMO-BSO211P-H-1190	MOSFET SMALL SIGNAL N-CH
	Mfr.#: BSO211P/211P/LOC211P OMO.#: OMO-BSO211P-211P-LOC211P-1190	Neu und Original
	Mfr.#: BSO211PH OMO.#: OMO-BSO211PH-1190	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSO211PHXUMA1 OMO.#: OMO-BSO211PHXUMA1-INFINEON-TECHNOLOGIES	MOSFET 2P-CH 20V 4A 8DSO
	Mfr.#: BSO211PNTMA1 OMO.#: OMO-BSO211PNTMA1-INFINEON-TECHNOLOGIES	MOSFET 2P-CH 20V 4.7A 8SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 5000
Menge eingeben:

Der aktuelle Preis von BSO211PNTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,53 $~~; ~~0,53 $~~

10: ~~0,51 $~~; ~~5,06 $~~

100: ~~0,48 $~~; ~~47,91 $~~

500: ~~0,45 $~~; ~~226,25 $~~

1000: ~~0,43 $~~; ~~425,90 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSO211PNTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes