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FDS6673BZ-F085

FDS6673BZ-F085
Mfr. #:
FDS6673BZ-F085
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET -30V P-Channel PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS6673BZ-F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDS6673BZ-F085 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
14.5 A
Rds On - Drain-Source-Widerstand:
6.5 mOhms
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Qualifikation:
AEC-Q101
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
FDS6673BZ_F085
Transistortyp:
1 P-Channel
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
60 S
Abfallzeit:
105 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
225 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
FDS6673BZ_F085
Gewichtseinheit:
0.008127 oz
Tags
FDS6673B, FDS6673, FDS667, FDS66, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 14.5A Automotive 8-Pin SOIC T/R
***emi
P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***et
TRANS MOSFET N-CH 30V 16A 8SOIC
***ser
MOSFETs 30V N-Channel PT SyncFET
***eco
30V,16A,5.5 OHMS, NCH,SINGLE, SO8,POWER TRENCH MOSFET
***Yang
TRANS MOSFET N-CH 30V 16A 8SOIC - Bulk
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***ark
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:16A; Resistance, Rds On:0.0055ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL, MOSFET, -30V, -16A, SOIC; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-16A;
***ure Electronics
Single P-Channel 30 V 10.2 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***nell
MOSFET,P CH,30V,16A,SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -16A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power
***(Formerly Allied Electronics)
Fairchild FDS8896 N-channel MOSFET Transistor, 15 A, 30 V, 8-Pin SOIC | ON Semiconductor FDS8896
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ
***ure Electronics
N-Channel 30 V 6 mOhm SMT PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 36 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC Tube
***icontronic
Small Signal Field-Effect Transistor, 17.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17.2A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDS6673BZ_F085
DISTI # V36:1790_06338045		ON Semiconductor-30V P-CHANNEL POWERTRENCH&#170
    FDS6673BZ-F085
    DISTI # FDS6673BZ-F085CT-ND    		ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDS6673BZ-F085
      DISTI # FDS6673BZ-F085DKR-ND      		ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDS6673BZ-F085
        DISTI # FDS6673BZ-F085TR-ND        		ON SemiconductorMOSFET P-CH 30V 14.5A 8-SOIC
        RoHS: Compliant
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
          FDS6673BZ-F085
          DISTI # FDS6673BZ-F085          		ON SemiconductorTrans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6673BZ-F085)
          RoHS: Compliant
          Min Qty: 2500
          Container: Reel          		Americas - 0
            FDS6673BZ-F085
            DISTI # FDS6673BZ-F085            		ON SemiconductorTrans MOSFET P-CH 30V 14.5A 8-Pin SOIC T/R - Bulk (Alt: FDS6673BZ-F085)
            RoHS: Compliant
            Min Qty: 676
            Container: Bulk            		Americas - 0
            • 6760:$0.4559
            • 3380:$0.4679
            • 2028:$0.4739
            • 1352:$0.4799
            • 676:$0.4829
            FDS6673BZ_F085
            DISTI # 64R3052            		ON SemiconductorPCH POWER TRENCH MOSFET / TAPE REEL0
            • 30000:$0.4180
            • 18000:$0.4280
            • 12000:$0.4450
            • 6000:$0.4940
            • 3000:$0.5430
            • 1:$0.5660
            FDS6673BZ-F085
            DISTI # 512-FDS6673BZ_F085            		ON SemiconductorMOSFET -30V P-Channel PowerTrench
            RoHS: Compliant            		3683
            • 1:$1.1800
            • 10:$1.0100
            • 100:$0.7790
            • 500:$0.6880
            • 1000:$0.5430
            • 2500:$0.4820
            • 10000:$0.4640
            FDS6673BZ-F085ON SemiconductorSmall Signal Field-Effect Transistor, 14.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		2500
            • 1000:$0.4900
            • 500:$0.5100
            • 100:$0.5300
            • 25:$0.5600
            • 1:$0.6000
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1986
            Menge eingeben:
            Der aktuelle Preis von FDS6673BZ-F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            1,18 $
            1,18 $
            10
            1,01 $
            10,10 $
            100
            0,78 $
            77,90 $
            500
            0,69 $
            344,00 $
            1000
            0,54 $
            543,00 $
            Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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