SPS01N60C3

Mfr. #:: SPS01N60C3
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SPS01N60C3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: TO-251-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 600 V

Id - Kontinuierlicher Drainstrom:: 800 mA

Rds On - Drain-Source-Widerstand:: 6 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 2.1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 3.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 11 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: CoolMOS

Verpackung:: Rohr

Höhe:: 6.22 mm

Länge:: 6.73 mm

Serie:: CoolMOS C3

Transistortyp:: 1 N-Channel

Breite:: 2.38 mm

Marke:: Infineon-Technologien

Abfallzeit:: 30 ns

Produktart:: MOSFET

Anstiegszeit:: 25 ns

Werkspackungsmenge:: 1500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 55 ns

Typische Einschaltverzögerungszeit:: 30 ns

Teil # Aliase:: SP000307396 SPS01N60C3BKMA1

Gewichtseinheit:: 0.139332 oz

Tags: SPS01, SPS0, SPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPS01N60C3 Beschreibung

***p One Stop Japan: Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube

***ical: Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251

***et: Trans MOSFET N-CH 650V 0.8A 3-Pin TO-251 Tube

***i-Key: MOSFET N-CH 650V 800MA TO251-3

***nell: MOSFET, N, TO-251

***ark: MOSFET, N, TO-251; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:0.8A; On State Resistance:6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-251; ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:800mA; Drain Source Voltage Vds:650V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:11W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:800mA; Package / Case:TO-251; Power Dissipation Pd:11W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SPS01N60C3 DISTI # C1S322000119705	Infineon Technologies AG	Trans MOSFET N-CH 650V 0.8A 3-Pin(3+Tab) TO-251 Tube RoHS: Compliant	25	10:$0.5610
SPS01N60C3 DISTI # SPS01N60C3-ND	Infineon Technologies AG	MOSFET N-CH 650V 800MA TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call
SPS01N60C3 DISTI # SP000307396	Infineon Technologies AG	Trans MOSFET N-CH 650V 0.8A 3-Pin TO-251 Tube (Alt: SP000307396) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 1450	1:€0.6919 10:€0.5799 25:€0.4849 50:€0.4219 100:€0.4139 500:€0.4029 1000:€0.3949
SPS01N60C3	Infineon Technologies AG	Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-251AA RoHS: Compliant	43500	1000:$0.3200 500:$0.3400 100:$0.3600 25:$0.3700 1:$0.4000
SPS01N60C3BKMA1	Infineon Technologies AG	Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant	30000	1000:$0.4300 500:$0.4500 100:$0.4700 25:$0.4900 1:$0.5300
SPS01N60C3 DISTI # 726-SPS01N60C3	Infineon Technologies AG	MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 RoHS: Compliant	1005	1:$1.0400 10:$0.8270 100:$0.6060 500:$0.5790 1000:$0.4550 2500:$0.3860 5000:$0.3670 10000:$0.3510
SPS01N60C3 DISTI # 1664126	Infineon Technologies AG	MOSFET, N, TO-251 RoHS: Compliant	0	1:$1.6500 10:$1.3200 100:$0.9590 500:$0.9170 1000:$0.7210 2500:$0.6960

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von SPS01N60C3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SPS01 5
SPS0 38
SPS 609

SPS01N60C3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes