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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SI9435BDY-T1-GE3 DISTI # 32911878 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI9435BDY-T1-GE3 DISTI # 32398071 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 2179 |
|
| SI9435BDY-T1-GE3 DISTI # SI9435BDY-T1-GE3CT-ND | Vishay Siliconix | MOSFET P-CH 30V 4.1A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 165In Stock |
|
| SI9435BDY-T1-GE3 DISTI # SI9435BDY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET P-CH 30V 4.1A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 165In Stock |
|
| SI9435BDY-T1-GE3 DISTI # SI9435BDY-T1-GE3TR-ND | Vishay Siliconix | MOSFET P-CH 30V 4.1A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | On Order |
|
| SI9435BDY-T1-GE3 DISTI # V36:1790_09216522 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI9435BDY-T1-GE3 DISTI # SI9435BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R (Alt: SI9435BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
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| SI9435BDY-T1-GE3 DISTI # SI9435BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9435BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI9435BDY-T1-GE3 DISTI # 84R8082 | Vishay Intertechnologies | Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84R8082) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack | Americas - 0 |
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| SI9435BDY-T1-GE3 DISTI # 84R8082 | Vishay Intertechnologies | P CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.3W RoHS Compliant: Yes | 2194 |
|
| SI9435BDY-T1-GE3 DISTI # 15R5249 | Vishay Intertechnologies | P CH MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.1A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:1.3W RoHS Compliant: Yes | 0 |
|
| SI9435BDY-T1-GE3 DISTI # 781-SI9435BDY-GE3 | Vishay Intertechnologies | MOSFET 30V 5.7A 2.5W 42mohm @ 10V RoHS: Compliant | 4414 |
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| SI9435BDY-T1-GE3 DISTI # 1869009 | Vishay Intertechnologies | P CHANNEL MOSFET RoHS: Compliant | 2194 |
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| SI9435BDY-T1-GE3 DISTI # 1869009 | Vishay Intertechnologies | P CHANNEL MOSFET | 2179 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SI9435BDY-T1-GE3 OMO.#: OMO-SI9435BDY-T1-GE3 |
MOSFET 30V 5.7A 2.5W 42mohm @ 10V |
|
Mfr.#: SI9435BDY-T1-E3-CUT TAPE |
Neu und Original |
|
|
Mfr.#: SI9435BDY-T1 OMO.#: OMO-SI9435BDY-T1-1190 |
MOSFET 30V 5.7A 2.5W |
|
Mfr.#: SI9435BDY-T1-E3 OMO.#: OMO-SI9435BDY-T1-E3-VISHAY |
MOSFET P-CH 30V 4.1A 8-SOIC |
|
|
Mfr.#: SI9435BDY-T1-E3 , IMP811 |
Neu und Original |
|
|
Mfr.#: SI9435BDY-T1-E3 GE3 OMO.#: OMO-SI9435BDY-T1-E3-GE3-1190 |
Neu und Original |
|
|
Mfr.#: SI9435BDY-T1-E3. OMO.#: OMO-SI9435BDY-T1-E3--1190 |
MOSFET 30V 5.7A 0.042Ohm |
|
|
Mfr.#: SI9435BDY-T1-GE3 OMO.#: OMO-SI9435BDY-T1-GE3-VISHAY |
MOSFET P-CH 30V 4.1A 8-SOIC |
|
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Mfr.#: SI9435BDY-TI-E3 OMO.#: OMO-SI9435BDY-TI-E3-1190 |
Neu und Original |
|
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Mfr.#: SI9435BDYT1E3 OMO.#: OMO-SI9435BDYT1E3-1190 |
Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |