We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IPD105N03LGATMA1 DISTI # IPD105N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD105N03LGATMA1 DISTI # IPD105N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD105N03LGATMA1 DISTI # IPD105N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPS105N03LGAKMA1 DISTI # IPS105N03LGAKMA1-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| IPU105N03L G DISTI # IPU105N03LGIN-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A IPAK RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| IPD105N03LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 1400 |
|
| IPS105N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 18615 |
|
| IPS105N03LGAKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant | 27000 |
|
| IPD105N03LGATMA1 DISTI # 726-IPD105N03LGATMA1 | Infineon Technologies AG | MOSFET N-Ch 30V 35A DPAK-2 RoHS: Compliant | 0 | |
| IPS105N03L G DISTI # 726-IPS105N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A IPAK-3 OptiMOS 3 RoHS: Compliant | 0 | |
| IPD105N03L G DISTI # 726-IPD105N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A DPAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPU105N03L G DISTI # 726-IPU105N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A IPAK-3 RoHS: Compliant | 0 | |
| IPF105N03LG DISTI # 726-IPF105N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A DPAK-2 RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: 105087-HMC421QS16 |
EVAL BOARD HMC421QS16 |
|
Mfr.#: 105143-HMC194AMS8 |
EVAL BOARD HMC194AMS8E |
|
Mfr.#: 105701 OMO.#: OMO-105701-1190 |
Neu und Original |
|
|
Mfr.#: 105R-181HS OMO.#: OMO-105R-181HS-API-DELEVAN |
Fixed Inductors .18uH 3% .19ohm Chip SMT RF Ind |
|
Mfr.#: 105MMR630K |
Film Capacitors 1uF 630V 10% |
|
|
Mfr.#: 105R-471G OMO.#: OMO-105R-471G-API-DELEVAN |
Fixed Inductors .47uH 2% .31ohm Chip SMT RF Ind |
|
|
Mfr.#: 105R-181KS OMO.#: OMO-105R-181KS-API-DELEVAN |
Fixed Inductors .18uH 10% .19ohm Chip SMT RF Ind |
|
|
Mfr.#: 105-331FS OMO.#: OMO-105-331FS-API-DELEVAN |
Fixed Inductors .33uH 1% .25ohm Chip SMT RF Ind |
|
Mfr.#: 1052067-1 |
CONN SMA PLUG R/A 50 OHM SOLDER |
|
|
Mfr.#: 1053122214 OMO.#: OMO-1053122214-MOLEX |
CONN HEADER VERT 14POS 2.5MM |