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2SC5065-O(TE85L,F)

2SC5065-O(TE85L,F)
Mfr. #:
2SC5065-O(TE85L,F)
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SC5065-O(TE85L,F) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SC5065-O(TE85L,F) Datasheet2SC5065-O(TE85L,F) Datasheet (P4-P6)2SC5065-O(TE85L,F) Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren - BJT
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SC-70-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
12 V
Kollektor- Basisspannung VCBO:
20 V
Emitter- Basisspannung VEBO:
3 V
Kollektor-Emitter-Sättigungsspannung:
-
Maximaler DC-Kollektorstrom:
30 mA
Bandbreitenprodukt fT gewinnen:
7 GHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 125 C
DC-Stromverstärkung hFE Max:
240
Verpackung:
Spule
Marke:
Toshiba
Kontinuierlicher Kollektorstrom:
30 mA
DC-Kollektor/Basisverstärkung hfe Min:
80
Pd - Verlustleistung:
100 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Tags
2SC5065-O(T, 2SC5065-O, 2SC5065, 2SC506, 2SC50, 2SC5, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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RF Transistor, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power
***nell
RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***roFlash
Trans Rf NPN 10V 1GHZ Ssm
***
TRANSISTOR PD=150MW F=1MHZ
Bild Teil # Beschreibung
2SC5065-O(TE85L,F)

Mfr.#: 2SC5065-O(TE85L,F)

OMO.#: OMO-2SC5065-O-TE85L-F-

 Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
2SC5065-O

Mfr.#: 2SC5065-O

OMO.#: OMO-2SC5065-O-1190

 Neu und Original
2SC5065-O(TE85LF)CT-ND

Mfr.#: 2SC5065-O(TE85LF)CT-ND

OMO.#: OMO-2SC5065-O-TE85LF-CT-ND-1190

 Neu und Original
2SC5065-O(TE85LF)DKR-ND

Mfr.#: 2SC5065-O(TE85LF)DKR-ND

OMO.#: OMO-2SC5065-O-TE85LF-DKR-ND-1190

 Neu und Original
2SC5065-O(TE85LF)TR-ND

Mfr.#: 2SC5065-O(TE85LF)TR-ND

OMO.#: OMO-2SC5065-O-TE85LF-TR-ND-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von 2SC5065-O(TE85L,F) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,36 $
0,36 $
10
0,26 $
2,65 $
100
0,20 $
19,60 $
500
0,17 $
83,00 $
1000
0,13 $
128,00 $
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