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FDU7N60NZTU

FDU7N60NZTU
Mfr. #:
FDU7N60NZTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDU7N60NZTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
5.5 A
Rds On - Drain-Source-Widerstand:
1.05 Ohms
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
90 W
Aufbau:
Single
Handelsname:
UniFET
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FDU7N60NZTU
Transistortyp:
1 N-Channel
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.012102 oz
Tags
FDU7N60NZ, FDU7N60N, FDU7N6, FDU7N, FDU7, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK
*** Stop Electro
Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
***ical
Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) IPAK Tube
***(Formerly Allied Electronics)
Power MOSFET Nch MDmeshII plus 600V 4.5A
*** Electronic Components
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 4.5A, IPAK, Tube
***icroelectronics
N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 950 mOhm Through Hole Mdmesh II Plus Power Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***ical
Trans MOSFET N-CH 620V 6A 3-Pin(3+Tab) TO-251
***el Electronic
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
***et Europe
Trans MOSFET N-CH 650V 4.3A 3-Pin TO-251 Tube
***ronik
N-CH 600V 4,3A 1000mOhm TO251
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
Teil # Mfg. Beschreibung Aktie Preis
FDU7N60NZTU
DISTI # FDU7N60NZTU-ND		ON SemiconductorMOSFET N-CH 600V SGL IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.6291
FDU7N60NZTU
DISTI # FDU7N60NZTU		ON SemiconductorMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: FDU7N60NZTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.5619
  • 10080:$0.5579
  • 20160:$0.5509
  • 30240:$0.5439
  • 50400:$0.5299
FDU7N60NZTU
DISTI # 54T8364		ON SemiconductorUF2 600V 1.25OHM IPAK / TUBE0
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8170
  • 1000:$0.7140
  • 2500:$0.5770
  • 10000:$0.5590
FDU7N60NZTUON Semiconductor 
RoHS: Not Compliant		5040
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
RoHS: Compliant		84030
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
FDU7N60NZTU
DISTI # 512-FDU7N60NZTU		ON SemiconductorMOSFET N-Channel MOSFET 600V 5.5A 1.25Ohm
RoHS: Compliant		5000
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9250
  • 500:$0.8180
  • 1000:$0.6450
  • 2500:$0.5720
  • 10000:$0.5510
FDU7N60NZTU
DISTI # 8070710P		ON SemiconductorMOSFETFAIRCHILDFDU7N60NZTU, TU4560
  • 50:£0.3840
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 MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
STFH10N60M2

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OMO.#: OMO-STFH10N60M2-STMICROELECTRONICS

 MOSFET NCH 600V 7.5A TO220
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von FDU7N60NZTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,95 $
0,95 $
10
0,82 $
8,17 $
100
0,63 $
62,70 $
500
0,55 $
277,00 $
1000
0,44 $
437,00 $
2500
0,39 $
970,00 $
10000
0,37 $
3 730,00 $
25000
0,36 $
9 025,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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