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S25FL512SDPBHV210

S25FL512SDPBHV210
Mfr. #:
S25FL512SDPBHV210
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SDPBHV210 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S25FL512SDPBHV210 Mehr Informationen S25FL512SDPBHV210 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
BGA-24
Serie:
S25FL512S
Speichergröße:
512 Mbit
Oberflächentyp:
SPI
Organisation:
64 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
1.65 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
75 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 105 C
Verpackung:
Tablett
Speichertyp:
NOCH
Geschwindigkeit:
66 MHz
Die Architektur:
Finsternis
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
338
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Tags
S25FL512SDPBHV2, S25FL512SDPBHV, S25FL512SDPB, S25FL512SDP, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 512 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, BGA-FAB024 IN TRAY PACKING
***i-Key
IC FLASH 512MBIT SPI/QUAD 24BGA
***ress Semiconductor SCT
Serial NOR Flash Memory, 256 Mbit Density, FBGA-24, RoHS
***et
NOR Flash Serial-SPI 3V 256Mbit 256M x 1bit 24-Pin BGA Tray
***ark
Tray Pkged / 256-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, Bga-Fab024 In Tray Packing, With Reset#
***ical
NOR Flash Serial-SPI 3V/3.3V 128M-bit 128M x 1 8ns Automotive 24-Pin BGA Tray
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, BGA-FAB024 IN TRAY PACKING, WITH RESET#
***-Wing Technology
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 66MHz 8ns 8mm 0.0003A
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, FBGA-24, RoHS
***ark
Tray Pkged / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 66-Mhz Spi (Serial Peripheral Interface) And Multi I/O Bus - 64Kb, Bga-Fab024 In Tray Packing, With Reset#
***i-Key
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SDPBHV210
DISTI # S25FL512SDPBHV210-ND		Cypress SemiconductorIC FLASH 512M SPI 66MHZ 24BGA
RoHS: Compliant
Min Qty: 338
Container: Tray		Temporarily Out of Stock
  • 338:$6.8887
S25FL512SDPBHV210
DISTI # 727-S25FL512SDPBHV21		Cypress SemiconductorNOR Flash 512-MBIT CMOS 3.0 V 65NM FLASH MEMORY
RoHS: Compliant		0
  • 1:$10.7100
  • 10:$9.8100
  • 25:$8.9200
  • 50:$8.5000
  • 100:$8.0300
  • 250:$7.4200
  • 500:$6.4700
  • 1000:$6.0200
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Verfügbarkeit
Aktie:
245
Auf Bestellung:
2228
Menge eingeben:
Der aktuelle Preis von S25FL512SDPBHV210 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,71 $
10,71 $
10
9,81 $
98,10 $
25
8,92 $
223,00 $
50
8,50 $
425,00 $
100
8,03 $
803,00 $
250
7,42 $
1 855,00 $
500
6,47 $
3 235,00 $
1000
6,02 $
6 020,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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