BSC028N06NSTATMA1

BSC028N06NSTATMA1
Mfr. #:
BSC028N06NSTATMA1
Hersteller:
Infineon Technologies
Beschreibung:
DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC028N06NSTATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC028N06NSTATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
BSC028N06N, BSC028N06, BSC028, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin PG-TDSON T/R
***ical
Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 100W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0023Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 100W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:100W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 100W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:100W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.9823
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.1285
  • 500:$1.3620
  • 100:$1.7511
  • 10:$2.1790
  • 1:$2.4100
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.1285
  • 500:$1.3620
  • 100:$1.7511
  • 10:$2.1790
  • 1:$2.4100
BSC028N06NSTATMA1
DISTI # BSC028N06NSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin PG-TDSON T/R - Tape and Reel (Alt: BSC028N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.9889
  • 10000:$0.9539
  • 20000:$0.9189
  • 30000:$0.8879
  • 50000:$0.8719
BSC028N06NSTATMA1
DISTI # 726-BSC028N06NSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
0
  • 1:$2.0300
  • 10:$1.7200
  • 100:$1.3800
  • 500:$1.2100
  • 1000:$0.9960
  • 2500:$0.9280
  • 5000:$0.8940
Bild Teil # Beschreibung
BSC028N06NSATMA1

Mfr.#: BSC028N06NSATMA1

OMO.#: OMO-BSC028N06NSATMA1

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSC028N06NS

Mfr.#: BSC028N06NS

OMO.#: OMO-BSC028N06NS

MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
BSC028N03LS

Mfr.#: BSC028N03LS

OMO.#: OMO-BSC028N03LS-1190

Neu und Original
BSC028N03LSCG

Mfr.#: BSC028N03LSCG

OMO.#: OMO-BSC028N03LSCG-1190

Neu und Original
BSC028N03MSCG

Mfr.#: BSC028N03MSCG

OMO.#: OMO-BSC028N03MSCG-1190

Neu und Original
BSC028N06LS3G , TDA6503A

Mfr.#: BSC028N06LS3G , TDA6503A

OMO.#: OMO-BSC028N06LS3G-TDA6503A-1190

Neu und Original
BSC028N06LS3GATMA1

Mfr.#: BSC028N06LS3GATMA1

OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 100A TDSON-8
BSC028N06NS

Mfr.#: BSC028N06NS

OMO.#: OMO-BSC028N06NS-1190

Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: BSC028N06NS)
BSC028N06NSATMA1

Mfr.#: BSC028N06NSATMA1

OMO.#: OMO-BSC028N06NSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 23A TDSON-8
BSC028N06NSTATMA1

Mfr.#: BSC028N06NSTATMA1

OMO.#: OMO-BSC028N06NSTATMA1-INFINEON-TECHNOLOGIES

DIFFERENTIATED MOSFETS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von BSC028N06NSTATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,31 $
1,31 $
10
1,24 $
12,42 $
100
1,18 $
117,71 $
500
1,11 $
555,85 $
1000
1,05 $
1 046,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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