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CY62147EV30LL-45BVXI

CY62147EV30LL-45BVXI
Mfr. #:
CY62147EV30LL-45BVXI
Hersteller:
Cypress Semiconductor
Beschreibung:
SRAM 4Mb 3V 45ns 256K x 16 LP SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CY62147EV30LL-45BVXI Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CY62147EV30LL-45BVXI Mehr Informationen CY62147EV30LL-45BVXI Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
4 Mbit
Organisation:
256 k x 16
Zugriffszeit:
45 ns
Maximale Taktfrequenz:
-
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
2.2 V
Versorgungsstrom - Max.:
20 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
VFBGA-48
Verpackung:
Tablett
Speichertyp:
Flüchtig
Serie:
CY62147EV30LL
Typ:
Asynchron
Marke:
Cypress Semiconductor
Anzahl der Häfen:
1
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
480
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
MoBL
Gewichtseinheit:
0.007873 oz
Tags
CY62147EV30LL-45BVX, CY62147EV30LL-45BV, CY62147EV30LL-45B, CY62147EV30LL-4, CY62147EV3, CY62147E, CY62147, CY6214, CY621, CY62, CY6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
CY62147EV30 Series 4 Mb (256 K x 16) 2.2 V 45 ns CMOS Static RAM - FBGA-48
***p One Stop Japan
SRAM Chip Async Single 3V 4M-bit 256K x 16 45ns 48-Pin VFBGA Tray
***et
SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 48-Pin VFBGA
***ment14 APAC
SRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48
***i-Key
IC SRAM 4M PARALLEL 48VFBGA
***ark
SRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48; Memory Size:4Mbit; SRAM Memory Configuration:256K x 16bit; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:VFBGA; No. of Pins:48Pins; Access Time:45ns; Operating Temperature Min:-40�C; RoHS Compliant: Yes
CY7C1021D CMOS Static RAM
Cypress Semiconductor CY7C1021D CMOS static RAM is a high-performance device organized as 65,536 words by 16 bits. The Cypress Semiconductor CY7C1021D CMOS static RAM has an automatic power down feature that significantly reduces power consumption when deselected. This Cypress device has low active power of 80mA at 10ns and low CMOS standby power of 3mA.The CY7C1021D static RAM also features 2.0V data retention and independent control of upper and lower bits.
Cypress Asynchronous SRAM
Cypress offers a broad portfolio of Fast Asynchronous and Low-power Asynchronous SRAM (MoBL™) devices. Designers use Asynchronous SRAMs in a wide variety of industrial, medical, commercial, automotive, and military applications that require the highest standards of reliability and performance. Learn More
Micropower (MoBL) Async SRAMs
Cypress's MoBL™ Async SRAM devices comprise a broad portfolio of Asynchronous Low power SRAM devices, with densities ranging from 64Kb to 64Mb. MoBL SRAMs are available in industry-standard voltage, bus-width, and package options. The devices offer industry leading Standby Power Dissipation (maximum) specifications. The MoBL Asynchronous SRAMs are ideal for battery powered and battery-backed solutions across a range of application segments. MoBL SRAM devices are available in industrial, automotive and radiation hardened temperature grades.Learn More
Teil # Mfg. Beschreibung Aktie Preis
CY62147EV30LL-45BVXI
DISTI # 25343714		Cypress SemiconductorSRAM Chip Async Single 3V 4M-bit 256K x 16 45ns 48-Pin VFBGA Tray
RoHS: Compliant		3840
  • 480:$4.4533
CY62147EV30LL-45BVXI
DISTI # 428-2072-ND		Cypress SemiconductorIC SRAM 4M PARALLEL 48VFBGA
RoHS: Compliant
Min Qty: 1
Container: Tray		809In Stock
  • 1440:$3.6619
  • 960:$3.7616
  • 480:$4.0793
  • 100:$4.0950
  • 50:$4.5648
  • 25:$4.5964
  • 10:$4.6860
  • 1:$5.1300
CY62147EV30LL-45BVXIT
DISTI # CY62147EV30LL-45BVXIT-ND		Cypress SemiconductorIC SRAM 4M PARALLEL 48VFBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$3.5438
CY62147EV30LL-45BVXI
DISTI # C1S159300108380		Cypress SemiconductorSRAM Chip Async Single 3V 4M-bit 256K x 16 45ns 48-Pin VFBGA Tray
RoHS: Compliant		312
  • 200:$3.5300
  • 100:$3.8500
  • 50:$4.0700
  • 10:$4.6000
  • 1:$5.8000
CY62147EV30LL-45BVXI
DISTI # 22AC8090		Cypress SemiconductorSRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48,Memory Size:4Mbit,SRAM Memory Configuration:256K x 16bit,Supply Voltage Range:2.2V to 3.6V,Memory Case Style:VFBGA,No. of Pins:48Pins,Access Time:45ns,Operating Temperature Min:-40°C,, RoHS Compliant: Yes329
  • 1:$4.8900
  • 10:$4.4600
  • 25:$4.3800
  • 50:$4.3500
  • 100:$3.9000
  • 250:$3.8900
  • 500:$3.6300
CY62147EV30LL-45BVXI
DISTI # 727-CY47EV30LL45BVXI		Cypress SemiconductorSRAM 4Mb 3V 45ns 256K x 16 LP SRAM
RoHS: Compliant		850
  • 1:$4.8900
  • 10:$4.4600
  • 25:$4.3800
  • 50:$4.3500
  • 100:$3.9000
  • 250:$3.8900
  • 500:$3.6300
  • 1000:$3.4700
  • 2000:$3.3800
CY62147EV30LL-45BVXIT
DISTI # 727-CY62147EV45BVXIT		Cypress SemiconductorSRAM 4Mb 3V 45ns 256K x 16 LP SRAM
RoHS: Compliant		2000
  • 1:$4.8900
  • 10:$4.4600
  • 25:$4.3800
  • 50:$4.3500
  • 100:$3.9000
  • 250:$3.8900
  • 500:$3.6300
  • 1000:$3.4700
  • 2000:$3.3800
CY62147EV30LL-45BVXICypress SemiconductorStandard SRAM, 256KX16, 45ns, CMOS, PBGA48
RoHS: Compliant		2869
  • 1000:$4.2400
  • 500:$4.4600
  • 100:$4.6400
  • 25:$4.8400
  • 1:$5.2100
CY62147EV30LL-45BVXICypress SemiconductorCY62147EV30 Series 4 Mb (256 K x 16) 2.2 V 45 ns CMOS Static RAM - FBGA-48
RoHS: Compliant		5824Tray
  • 1440:$4.2665
  • 2400:$4.0810
  • 3360:$4.0068
  • 4320:$3.9326
  • 99999:$3.8584
CY62147EV30LL-45BVXICypress SemiconductorCY62147EV30 Series 4 Mb (256 K x 16) 2.2 V 45 ns CMOS Static RAM - FBGA-48
RoHS: Compliant		431Tray
  • 5:$4.6500
  • 25:$3.9100
  • 50:$3.7700
  • 100:$3.6300
  • 250:$3.3300
CY62147EV30LL-45BVXITCypress SemiconductorSTANDARD SRAM, 256KX16, 45NS, CMOS, PBGA48430
  • 208:$2.2320
  • 73:$2.4180
  • 1:$5.5800
CY62147EV30LL45BVXICypress Semiconductor 
RoHS: Not Compliant		Europe - 105
    CY62147EV30LL-45BVXI
    DISTI # 2767915    		Cypress SemiconductorSRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48
    RoHS: Compliant    		279
    • 1:£3.7400
    • 10:£3.4000
    • 25:£3.3400
    • 50:£3.3200
    • 100:£2.9800
    CY62147EV30LL-45BVXI
    DISTI # XSFP00000150160    		CYPRESS SEMICONDUCTORStandard SRAM, 256KX16, 45ns, CMOS, PBGA48
    RoHS: Compliant    		10879
    • 480:$6.6000
    • 10879:$6.1900
    CY62147EV30LL-45BVXI
    DISTI # 2767915    		Cypress SemiconductorSRAM, 4MBIT, 256KX16BIT, 45NS, VFBGA-48
    RoHS: Compliant    		279
    • 1:$7.7400
    • 10:$7.0600
    • 25:$6.9300
    • 50:$6.8900
    • 100:$6.1800
    • 250:$6.1600
    • 500:$5.7500
    • 1000:$5.5000
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    Verfügbarkeit
    Aktie:
    779
    Auf Bestellung:
    2762
    Menge eingeben:
    Der aktuelle Preis von CY62147EV30LL-45BVXI dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,89 $
    4,89 $
    10
    4,46 $
    44,60 $
    25
    4,38 $
    109,50 $
    50
    4,35 $
    217,50 $
    100
    3,90 $
    390,00 $
    250
    3,89 $
    972,50 $
    500
    3,63 $
    1 815,00 $
    1000
    3,47 $
    3 470,00 $
    2000
    3,38 $
    6 760,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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