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APTGT35A120T1G

APTGT35A120T1G
Mfr. #:
APTGT35A120T1G
Hersteller:
Microchip / Microsemi
Beschreibung:
IGBT Modules Trench Field Stop 1200V 55A 208W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APTGT35A120T1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APTGT35A120T1G DatasheetAPTGT35A120T1G Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
1.7 V
Kontinuierlicher Kollektorstrom bei 25 C:
55 A
Gate-Emitter-Leckstrom:
400 nA
Pd - Verlustleistung:
208 W
Paket / Koffer:
SP1-12
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 100 C
Verpackung:
Rohr
Marke:
Mikrochip / Mikrosemi
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Gewichtseinheit:
2.821917 oz
Tags
APTGT35, APTGT3, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Module N-CH 1.2KV 55A 12-Pin Case SP1
***i-Key
IGBT MODULE 1200V 55A 208W SP1
***hardson RFPD
POWER IGBT TRANSISTOR
Bild Teil # Beschreibung
APTGT35A120T1G

Mfr.#: APTGT35A120T1G

OMO.#: OMO-APTGT35A120T1G

 IGBT Modules Trench Field Stop 1200V 55A 208W
APTGT35H120T3G

Mfr.#: APTGT35H120T3G

OMO.#: OMO-APTGT35H120T3G

 IGBT Modules DOR CC3052
APTGT35X120T3G

Mfr.#: APTGT35X120T3G

OMO.#: OMO-APTGT35X120T3G

 IGBT Modules CC3074
APTGT35X120T3G

Mfr.#: APTGT35X120T3G

OMO.#: OMO-APTGT35X120T3G-MICROSEMI

 Trans IGBT Module N-CH 1.2KV 55A 32-Pin Case SP-3
Verfügbarkeit
Aktie:
49
Auf Bestellung:
2032
Menge eingeben:
Der aktuelle Preis von APTGT35A120T1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
63,93 $
63,93 $
5
61,99 $
309,95 $
10
60,17 $
601,70 $
25
56,42 $
1 410,50 $
50
55,07 $
2 753,50 $
100
53,78 $
5 378,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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