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SI3851DV-T1-GE3

SI3851DV-T1-GE3
Mfr. #:
SI3851DV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3851DV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI3851DV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
IC-Chips
Verpackung
Spule
Teil-Aliasnamen
SI3851DV-GE3
Gewichtseinheit
0.000705 oz
Montageart
SMD/SMT
Paket-Koffer
TSOP-6
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single mit Schottky-Diode
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
830 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
1.6 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Widerstand
200 mOhms
Transistor-Polarität
P-Kanal
Tags
SI3851DV-T, SI3851, SI385, SI38, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE
***ment14 APAC
P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V
***ark
P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3851DV-T1-GE3
DISTI # SI3851DV-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3629
  • 6000:$0.3529
  • 12000:$0.3379
  • 18000:$0.3289
  • 30000:$0.3199
SI3851DV-T1-GE3
DISTI # 781-SI3851DV-GE3		Vishay IntertechnologiesMOSFET 30V 1.8A 1.15W 200mohm @ 10V
RoHS: Compliant		0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
Bild Teil # Beschreibung
SI3851DV-T1-GE3

Mfr.#: SI3851DV-T1-GE3

OMO.#: OMO-SI3851DV-T1-GE3

 MOSFET 30V 1.8A 1.15W 200mohm @ 10V
SI3851DV-T1-E3

Mfr.#: SI3851DV-T1-E3

OMO.#: OMO-SI3851DV-T1-E3

 MOSFET 30V 1.8A 1.15W
SI3851DV-T1-GE3

Mfr.#: SI3851DV-T1-GE3

OMO.#: OMO-SI3851DV-T1-GE3-317

 RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
SI3851DV

Mfr.#: SI3851DV

OMO.#: OMO-SI3851DV-1190

 Neu und Original
SI3851DV-T1

Mfr.#: SI3851DV-T1

OMO.#: OMO-SI3851DV-T1-1190

 Neu und Original
SI3851DV-T1-E3

Mfr.#: SI3851DV-T1-E3

OMO.#: OMO-SI3851DV-T1-E3-VISHAY

 MOSFET P-CH 30V 1.6A 6-TSOP
SI3851DV-T1-ES

Mfr.#: SI3851DV-T1-ES

OMO.#: OMO-SI3851DV-T1-ES-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von SI3851DV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,46 $
0,46 $
10
0,44 $
4,42 $
100
0,42 $
41,85 $
500
0,40 $
197,65 $
1000
0,37 $
372,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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