IRF9910TRPBF

Mfr. #:: IRF9910TRPBF
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET MOSFT DUAL NCh 20V 10A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF9910TRPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 20 V

Id - Kontinuierlicher Drainstrom:: 10 A

Rds On - Drain-Source-Widerstand:: 18.3 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Pd - Verlustleistung:: 2 W

Aufbau:: Dual

Verpackung:: Spule

Höhe:: 1.75 mm

Länge:: 4.9 mm

Transistortyp:: 2 N-Channel

Breite:: 3.9 mm

Marke:: Infineon-Technologien

Produktart:: MOSFET

Werkspackungsmenge:: 4000

Unterkategorie:: MOSFETs

Teil # Aliase:: SP001575370

Gewichtseinheit:: 0.019048 oz

Tags: IRF991, IRF99, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9910TRPBF Beschreibung

***ure Electronics: Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8

***SIT Distribution GmbH: Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET

***ment14 APAC: N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 5.5Milliohms;ID 15A;SO-8;PD 2.5W;VGS +/-20V

*** Source Electronics: MOSFET N-CH 20V 15A 8-SOIC / HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 7.0mΩ , ID = 15A )

***ure Electronics: Single N-Channel 20 V 7 mOhm 28 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 15A 8-Pin SOIC Tube

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:15A; On Resistance Rds(On):0.0055Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes

***et: Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC Tube

***ernational Rectifier: 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ure Electronics: N-Channel 25 V 0.0086 Ohm 5 W Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 25V 12.7A 8-Pin SOIC N T/R

***nell: MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:25V; Cont Current Id:18A; On State Resistance:0.0086ohm; Voltage Vgs Rds on Measurement:10V; Case Style:SO-8; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Current Id:12.7A; Max Junction Temperature Tj:150°C; Max Voltage Vds:25V; Max Voltage Vgs:12V; Max Voltage Vgs th:1.4V; Min Voltage Vgs th:0.6V; Power Dissipation:2.5W; Power Dissipation Pd:5W; Rds Measurement Voltage:10V; Rise Time:11ns; Transistor Case Style:SO

***peria: PSMN010-25YLC - N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology

***et: Transistor MOSFET N-Channel 25V 39A 4-Pin LFPAK

*** Electronics: MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET

***el Electronic: Interface - Drivers, Receivers, Transceivers 2 (1 Year) 8-SOIC (0.154, 3.90mm Width) Tape & Reel (TR) Transceiver Surface Mount 4.75V~5.25V 2/1 1Mbps CAN TRANSCEIVER

***ure Electronics: Single N-Channel 20V 4.4 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 20A 8-Pin SOIC T/R

***ineon SCT: 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 3.7 Milliohms,ID 20A,SO-8,PD 2.5W,VGS +/-20V | Infineon IRF3717TRPBF

***ronik: N-CH 20V 20A 4,4mOhm SO8 RoHSconf

***or: PFET, 20A I(D), 20V, 0.0044OHM,

***(Formerly Allied Electronics): SI9926CDY-T1-E3 Dual N-channel MOSFET Module; 8 A; 20 V; 8-Pin SOIC

***ure Electronics: Dual N-Channel 20 V 0.018 Ohms Surface Mount Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 8A 8-Pin SOIC T/R

***ark: Channel Type:dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:8A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: No

***ment14 APAC: MOSFET, DUAL, NN, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Junction Temperature Tj Max:150°C; Package / Case:SO-8; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Rise Time:10ns; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V; Voltage Vgs th Min:0.6V

***(Formerly Allied Electronics): IRF8910PBF Dual N-channel MOSFET Transistor, 10 A, 20 V, 8-Pin SOIC | Infineon IRF8910PBF

***Yang: Transistor MOSFET Array Dual N-CH 20V 10A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 13.4 mOhm 7.4 nC HEXFET® Power Mosfet - SOIC-8

***SIT Distribution GmbH: Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.0107Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.55V Rohs Compliant: Yes

***ure Electronics: Dual N-Channel 20 V 18.3 mOhm 4.9 nC HEXFET® Power Mosfet - SOIC-8

***et: Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC T/R

*** Stop Electro: Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Dual N-Channel MOSFET

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 8.9 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 18.3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.6 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 7.1 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

***ure Electronics: Single N-Channel 20 V 6 mOhm 5.7 W Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 20V 15.2A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20000mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.007ohm; Rds(on) Test Voltage, Vgs:16V; Threshold Voltage, Vgs Typ:2.1V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

***ure Electronics: Single P-Channel 20 V 0.0155 O 90 nC Surface Mount Mosfet - SOIC-8

***icontronic: Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P CH, W/D, 20V, 13.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13.4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C

***emi: Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 14 mOhm PowerTrench Mosfet - SOIC-8

***ponent Sense: Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC

***ical: Trans MOSFET N-CH 20V 9.4A 8-Pin SOIC N T/R

***hard Electronics: ON SEMICONDUCTOR - FDS6898A - DUAL N CHANNEL MOSFET, 20V, SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SO-8 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 9.4A; Current Id Max: 9.4A; Drain Source Voltage Vds, N Channel: 20V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.01ohm; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 1V; Voltage Vgs Rds on Measurement: 4.5V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF9910TRPBF DISTI # V72:2272_17801275	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R RoHS: Compliant	2427	1000:$0.4226 500:$0.5094 250:$0.5614 100:$0.5629 25:$0.6850 10:$0.6878 1:$0.7735
IRF9910TRPBF DISTI # IRF9910PBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4873In Stock	1000:$0.5864 500:$0.7266 100:$0.9193 10:$1.1480 1:$1.2900
IRF9910TRPBF DISTI # IRF9910PBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4873In Stock	1000:$0.5864 500:$0.7266 100:$0.9193 10:$1.1480 1:$1.2900
IRF9910TRPBF DISTI # IRF9910PBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 10A/12A 8-SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	4000In Stock	4000:$0.5353
IRF9910TRPBF DISTI # 26899648	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R RoHS: Compliant	2427	1000:$0.4226 500:$0.5094 250:$0.5614 100:$0.5629 25:$0.6850 21:$0.6878
IRF9910TRPBF DISTI # IRF9910TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R (Alt: IRF9910TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0
IRF9910TRPBF DISTI # IRF9910TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF9910TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.4379 8000:$0.4219 16000:$0.4069 24000:$0.3929 40000:$0.3859
IRF9910TRPBF DISTI # SP001575370	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R (Alt: SP001575370) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.5179 8000:€0.4239 16000:€0.3889 24000:€0.3589 40000:€0.3329
IRF9910TRPBF DISTI # 40M7982	Infineon Technologies AG	N CHANNEL MOSFET, 20V, 10A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0183ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.55V RoHS Compliant: Yes	0
IRF9910TRPBF DISTI # 70018981	Infineon Technologies AG	MOSFET,DUAL N-CHANNEL,20V,10A,SO-8 RoHS: Compliant	0	4000:$0.5100
IRF9910TRPBF DISTI # 942-IRF9910TRPBF	Infineon Technologies AG	MOSFET MOSFT DUAL NCh 20V 10A RoHS: Compliant	3335	1:$1.0200 10:$0.8670 100:$0.6660 500:$0.5880 1000:$0.4650 4000:$0.4120
IRF9910TRPBF DISTI # 1623269	Infineon Technologies AG	MOSFET DUAL N-CH 20V 10/12A HEXFET SOIC8, RL	9110	4000:£0.3430 8000:£0.3210
IRF9910TRPBF	International Rectifier		76	18:$0.7500 4:$1.2000 1:$1.5000
IRF9910TRPBF	International Rectifier		95	5:$1.1250 19:$0.7313 70:$0.4219
IRF9910TRPBF DISTI # XSLY00000000891	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000:$0.4200
IRF9910TRPBF DISTI # C1S322000487934	Infineon Technologies AG	Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R RoHS: Compliant	2427	250:$0.5614 100:$0.5629 25:$0.6850 10:$0.6878

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von IRF9910TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,01 $~~; ~~1,01 $~~

10: ~~0,87 $~~; ~~8,67 $~~

100: ~~0,67 $~~; ~~66,60 $~~

500: ~~0,59 $~~; ~~294,00 $~~

1000: ~~0,46 $~~; ~~465,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRF9910TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes