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BSC030N03LSGATMA1

BSC030N03LSGATMA1
Mfr. #:
BSC030N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC030N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSC030N03LSGATMA1 DatasheetBSC030N03LSGATMA1 Datasheet (P4-P6)BSC030N03LSGATMA1 Datasheet (P7-P9)BSC030N03LSGATMA1 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
55 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
69 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
49 S
Abfallzeit:
4.8 ns
Produktart:
MOSFET
Anstiegszeit:
5.2 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
29 ns
Typische Einschaltverzögerungszeit:
7.3 ns
Teil # Aliase:
BSC030N03LS BSC3N3LSGXT G SP000237661
Gewichtseinheit:
0.070548 oz
Tags
BSC030N03LSG, BSC030N03L, BSC030N03, BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 30 V 3 mOhm OptiMOS™3 Power-MOSFET - PG-TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSC030N03LSGATMA1
DISTI # V72:2272_06384550		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 10:$0.6498
  • 1:$0.7405
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		309In Stock
  • 1000:$0.4886
  • 500:$0.6189
  • 100:$0.7981
  • 10:$1.0100
  • 1:$1.1400
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4206
BSC030N03LSGATMA1
DISTI # 31273903		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
RoHS: Compliant		3707
  • 3000:$0.3750
  • 1000:$0.3789
  • 500:$0.4630
  • 250:$0.5154
  • 100:$0.5212
  • 25:$0.6420
  • 20:$0.6498
BSC030N03LSGXT/IBM
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 23A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 30000
  • 5000:$0.4119
  • 10000:$0.4109
  • 20000:$0.4099
  • 30000:$0.4089
  • 50000:$0.4069
BSC030N03LSGATMA1
DISTI # 60R2485		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes4606
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LS G
DISTI # 726-BSC030N03LS-G		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4848
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1
DISTI # 726-BSC030N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		4892
  • 1:$0.9500
  • 10:$0.8050
  • 100:$0.6190
  • 500:$0.5470
  • 1000:$0.4320
BSC030N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		500
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
BSC030N03LSGATMA1
DISTI # 8259112P		Infineon Technologies AGMOSFET N-CH 23A 30V OPTIMOS3 TDSON8EP, RL1700
  • 100:£0.2570
BSC030N03LSGATMA1
DISTI # BSC030N03LSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,98A,69W,PG-TDSON-82739
  • 1:$0.6732
  • 3:$0.5972
  • 10:$0.5016
  • 100:$0.4499
  • 1000:$0.4190
BSC030N03LSGATMA1
DISTI # C1S322000606399		Infineon Technologies AGMOSFETs
RoHS: Compliant		3707
  • 250:$0.5326
  • 100:$0.5342
  • 25:$0.6523
  • 10:$0.6551
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 1:$1.5100
  • 10:$1.2800
  • 100:$0.9800
  • 500:$0.8660
  • 1000:$0.6840
  • 5000:$0.6130
BSC030N03LSGATMA1
DISTI # 1775436		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		4606
  • 5:£0.6060
  • 25:£0.5490
  • 100:£0.4120
  • 250:£0.3690
  • 500:£0.3260
Bild Teil # Beschreibung
ASFL1-80.000MHZ-EC-T

Mfr.#: ASFL1-80.000MHZ-EC-T

OMO.#: OMO-ASFL1-80-000MHZ-EC-T-ABRACON

 Standard Clock Oscillators 80.0MHz 50ppm -20C +70C
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1993
Menge eingeben:
Der aktuelle Preis von BSC030N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,94 $
0,94 $
10
0,80 $
8,05 $
100
0,62 $
61,90 $
500
0,55 $
273,50 $
1000
0,43 $
432,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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