2N5302G

2N5302G
Mfr. #:
2N5302G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 30A 60V 200W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5302G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
ON Semiconductor
Produktkategorie
Transistoren (BJT) – einzeln, vorgespannt
Serie
2N5302
Verpackung
Tablett
Montageart
Durchgangsloch
Paket-Koffer
TO-204AA, TO-3
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-3
Aufbau
Single
Leistung max
200W
Transistor-Typ
NPN
Strom-Kollektor-Ic-Max
30A
Spannungs-Kollektor-Emitter-Breakdown-Max
60V
DC-Strom-Verstärkung-hFE-Min-Ic-Vce
15 @ 15A, 2V
Vce-Sättigung-Max-Ib-Ic
3V @ 6A, 30A
Strom-Kollektor-Abschalt-Max
5mA
Frequenz-Übergang
2MHz
Pd-Verlustleistung
200 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 65 C
Kollektor-Emitter-Spannung-VCEO-Max
60 V
Transistor-Polarität
NPN
Kollektor-Emitter-Sättigungsspannung
0.75 V
Kollektor-Basis-Spannung-VCBO
60 V
Maximaler-DC-Kollektor-Strom
30 A
Gain-Bandwidth-Product-fT
2 MHz
Kontinuierlicher Kollektorstrom
30 A
DC-Kollektor-Basis-Gain-hfe-Min
15
Tags
2N5302, 2N530, 2N53, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
***ure Electronics
2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***emi
High Power NPN Bipolar Power Transistor
***ark
Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N5302G
DISTI # 2N5302GOS-ND
ON SemiconductorTRANS NPN 60V 30A TO3
RoHS: Compliant
Min Qty: 1
Container: Tray
402In Stock
  • 1000:$2.4309
  • 500:$2.8824
  • 100:$3.3860
  • 10:$4.1330
  • 1:$4.6000
2N5302G
DISTI # 26762258
ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant
600
  • 1000:$2.0985
  • 500:$2.3375
  • 300:$2.6010
2N5302G
DISTI # 2N5302G
ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5302G)
RoHS: Compliant
Min Qty: 300
Container: Tray
Americas - 0
  • 300:$2.0900
  • 500:$2.0900
  • 800:$2.0900
  • 1500:$1.9900
  • 3000:$1.9900
2N5302G
DISTI # 26K5293
ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5293)
RoHS: Compliant
Min Qty: 1
Container: Bulk
Americas - 0
  • 1:$4.3800
  • 10:$3.7300
  • 25:$3.5600
  • 50:$3.4000
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
2N5302G
DISTI # 26K5293
ON SemiconductorBIPOLAR TRANSISTOR, NPN, 60V TO-204,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:60V,Transition Frequency ft:2MHz,Power Dissipation Pd:200W,DC Collector Current:30A,DC Current Gain hFE:5hFE,No. of Pins:2Pins RoHS Compliant: Yes300
  • 1:$4.5200
  • 10:$3.8700
  • 25:$3.7000
  • 50:$3.5400
  • 100:$3.3700
  • 250:$3.2000
  • 500:$2.8900
2N5302G
DISTI # 59M4756
ON SemiconductorBipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 2 MHz, 200 W, 30 A, 2 RoHS Compliant: Yes127
  • 1:$4.3800
  • 10:$3.7300
  • 25:$3.5600
  • 50:$3.4000
  • 100:$3.2300
  • 250:$3.0600
  • 500:$2.7500
2N5302GON Semiconductor 
RoHS: Not Compliant
2845
  • 1000:$2.4200
  • 500:$2.5500
  • 100:$2.6500
  • 25:$2.7700
  • 1:$2.9800
2N5302G
DISTI # 863-2N5302G
ON SemiconductorBipolar Transistors - BJT 30A 60V 200W NPN
RoHS: Compliant
371
  • 1:$4.3800
  • 10:$3.7300
  • 100:$3.2300
  • 200:$3.0600
  • 500:$2.7500
  • 1000:$2.3200
  • 2000:$2.2000
2N5302
DISTI # 863-2N5302
ON SemiconductorBipolar Transistors - BJT 30A 60V 200W NPN
RoHS: Not compliant
0
    2N5302G
    DISTI # C1S541900338856
    ON SemiconductorTrans GP BJT NPN 60V 30A 3-Pin(2+Tab) TO-3 Tray
    RoHS: Compliant
    100
    • 100:$2.9060
    • 10:$3.2960
    • 1:$3.7760
    2N5302G
    DISTI # 1459023
    ON SemiconductorTRANSISTOR, NPN, TO-3
    RoHS: Compliant
    427
    • 1:£3.7400
    • 10:£2.7100
    • 100:£2.2100
    • 250:£2.1100
    • 500:£2.0000
    2N5302G
    DISTI # 1459023
    ON SemiconductorTRANSISTOR, NPN, TO-3
    RoHS: Compliant
    427
    • 1:$6.9300
    • 10:$5.9100
    • 100:$5.1200
    • 200:$4.8500
    • 500:$4.3500
    • 1000:$3.6800
    • 2000:$3.4900
    • 5000:$3.3500
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    TRANS NPN 30V 0.05A TO92
    2N5087_J61Z

    Mfr.#: 2N5087_J61Z

    OMO.#: OMO-2N5087-J61Z-ON-SEMICONDUCTOR

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    Mfr.#: 2N5770_Q

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von 2N5302G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,84 $
    2,84 $
    10
    2,69 $
    26,93 $
    100
    2,55 $
    255,15 $
    500
    2,41 $
    1 204,90 $
    1000
    2,27 $
    2 268,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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