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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMV08N60GX-P DISTI # FE0000000004698 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order | |
| FMV08N60GX-S25PPSC-P DISTI # FE0000000004699 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMV08N50E OMO.#: OMO-FMV08N50E-1190 |
Power Field-Effect Transistor, 7.5A I(D),500V,0.79ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMV08N50E/08N50E OMO.#: OMO-FMV08N50E-08N50E-1190 |
Neu und Original |
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Mfr.#: FMV08N60 OMO.#: OMO-FMV08N60-1190 |
Neu und Original |
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Mfr.#: FMV08N60GX OMO.#: OMO-FMV08N60GX-1190 |
Neu und Original |
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Mfr.#: FMV08N80E OMO.#: OMO-FMV08N80E-1190 |
Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMV08N80E-FUJI OMO.#: OMO-FMV08N80E-FUJI-1190 |
Neu und Original |