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MRFE6P3300HR3

MRFE6P3300HR3
Mfr. #:
MRFE6P3300HR3
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV6 900MHZ 300W NI860ML
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRFE6P3300HR3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
66 V
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-860C3
Verpackung:
Spule
Aufbau:
Single Dual Drain Dual Gate
Höhe:
5.69 mm
Länge:
34.16 mm
Serie:
MRFE6P3300H
Typ:
HF-Leistungs-MOSFET
Breite:
10.31 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 0.5 V, 12 V
Teil # Aliase:
935309635128
Gewichtseinheit:
0.223087 oz
Tags
MRFE6P3, MRFE6P, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Lateral N-Channel Rf Power Mosfet, 860 Mhz, 300 W, 32 V Rohs Compliant: Yes
***W
RF Power Transistor,470 to 860 MHz, 300 W, Typ Gain in dB is 20.4 @ 860 MHz, 32 V, LDMOS, SOT1856
***et
Transistor RF MOSFET N-Channel 66V 5-Pin NI-860C3
*** Electronic Components
RF MOSFET Transistors HV6 900MHZ 300W NI860ML
***or
RF 2-ELEMENT, ULTRA HIGH FREQUEN
***el Electronic
IC REG LINEAR 1.5V 80MA SC82AB
***escale Semiconductor
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 125 W, Typ Gain in dB is 20.2 @ 880 MHz, 28 V, LDMOS, SOT1735
***et
Transistor RF FET N-CH 66V 865MHz to 960MHz 5-Pin TO-272WB T/R
***ical
Trans RF MOSFET N-CH 66V 5-Pin TO-272 WB EP T/R
*** Electronic Components
RF MOSFET Transistors HV6E 125W
***escale Semiconductor
Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900 MHz, 47 W Avg., 28 V
*** Electronic Components
RF MOSFET Transistors HV6E 900MHZ 200W NI860ML
*** Electronics
Trans RF MOSFET N-CH 66V 5-Pin NI-860C3 T/R
***or
RF 2-ELEMENT, ULTRA HIGH FREQUE
***el Electronic
IC REG LINEAR 1.8V 80MA SC82AB
***ical
Trans RF MOSFET N-CH 66V 3-Pin NI-780 T/R
*** Electronic Components
RF MOSFET Transistors HV6E 900MHZ 160W NI780H
***i-Key
RF ULTRA HIGH FREQUENCY BAND, N-
***ure Electronics
LET9060C Series 945 MHz 130 W 80 V N-Channel RF Power Transistor MOSFET - M-243
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
Mosfet, Rf, N-Ch, 80V, M243-3; Drain Source Voltage Vds:80V; Continuous Drain Current Id:12A; Power Dissipation Pd:130W; Operating Frequency Min:-; Operating Frequency Max:945Mhz; Rf Transistor Case:-; No. Of Pins:3Pins; Msl:-
***icroelectronics
120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package
***ure Electronics
LdmoST Family 100 W N - Channel Enhancement - mode MOSFETs RF Power Transistor
***ical
Trans RF MOSFET N-CH 60V 14A 5-Pin Case M-246 Loose
***ser
RF & Microwave Transistors N-Ch 65 Volt 14 Amp
***r Electronics
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ource
RF POWER TRANSISTORS RF POWER TRANSISTORS
***icroelectronics
30W 28V HF to 1GHz LDMOS TRANSISTOR
***et
Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243
***ure Electronics
Single N-Channel 65 V 74 W Silicon Mosfet - M-243
***ser
RF & Microwave Transistors N-Ch 65 Volt 4 Amp
***icroelectronics SCT
RF power transistor, the LdmoST family
***ponent Stockers USA
UHF BAND Si N-CHANNEL RF POWER MOSFET
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Teil # Mfg. Beschreibung Aktie Preis
MRFE6P3300HR3
DISTI # MRFE6P3300HR3-ND		NXP SemiconductorsFET RF 66V 863MHZ NI-860C3
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRFE6P3300HR3
    DISTI # MRFE6P3300HR3    		Avnet, Inc.Trans MOSFET N-CH 66V 5-Pin NI-860C3 T/R (Alt: MRFE6P3300HR3)
    RoHS: Compliant
    Min Qty: 250
    Container: Tape and Reel    		Europe - 92
    • 250:€333.3900
    • 500:€327.3900
    • 1000:€317.2900
    • 1500:€306.9900
    • 2500:€299.2900
    MRFE6P3300HR3.
    DISTI # 61AC0761    		NXP SemiconductorsLATERAL N-CHANNEL RF POWER MOSFET, 860 MHZ, 300 W, 32 V ROHS COMPLIANT: YES0
      MRFE6P3300HR3
      DISTI # 841-MRFE6P3300HR3      		NXP SemiconductorsRF MOSFET Transistors HV6 900MHZ 300W NI860ML
      RoHS: Compliant      		0
        MRFE6P3300HR3
        DISTI # MRFE6P3300HR3        		NXP SemiconductorsRF POWER TRANSISTOR
        RoHS: Compliant        		102
        • 1:$384.6800
        • 10:$353.4900
        • 25:$348.7800
        Bild Teil # Beschreibung
        MRFE6P3300HR3

        Mfr.#: MRFE6P3300HR3

        OMO.#: OMO-MRFE6P3300HR3

        		 RF MOSFET Transistors HV6 900MHZ 300W NI860ML
        MRFE6P9220HR3

        Mfr.#: MRFE6P9220HR3

        OMO.#: OMO-MRFE6P9220HR3

        		 RF MOSFET Transistors HV6E 900MHZ 200W NI860ML
        MRFE6P3300H

        Mfr.#: MRFE6P3300H

        OMO.#: OMO-MRFE6P3300H-1190

        		 Neu und Original
        MRFE6P3300HR5

        Mfr.#: MRFE6P3300HR5

        OMO.#: OMO-MRFE6P3300HR5-NXP-SEMICONDUCTORS

        		 FET RF 66V 863MHZ NI-860C3
        MRFE6P9220H

        Mfr.#: MRFE6P9220H

        OMO.#: OMO-MRFE6P9220H-1190

        		 Neu und Original
        MRFE6P9220HR3

        Mfr.#: MRFE6P9220HR3

        OMO.#: OMO-MRFE6P9220HR3-NXP-SEMICONDUCTORS

        		 FET RF 66V 880MHZ NI-860C3
        MRFE6P3300HR3

        Mfr.#: MRFE6P3300HR3

        OMO.#: OMO-MRFE6P3300HR3-NXP-SEMICONDUCTORS

        		 FET RF 66V 863MHZ NI-860C3
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von MRFE6P3300HR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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