FCB20N60TM

FCB20N60TM
Mfr. #:
FCB20N60TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET HIGH POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCB20N60TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
208 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FCB20N60
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
65 ns
Produktart:
MOSFET
Anstiegszeit:
140 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
230 ns
Typische Einschaltverzögerungszeit:
62 ns
Gewichtseinheit:
0.046296 oz
Tags
FCB20N60T, FCB20N, FCB20, FCB2, FCB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
***Components
N-Channel MOSFET, 20 A, 600 V, 3-Pin D2PAK ON Semiconductor FCB20N60TM
***ponent Sense
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) TO-263AB T/R
***ure Electronics
MOSFET N-CH 600V 20A D2PAK
***inecomponents.com
600V N-Channel SuperFET
***ser
IGBTs HIGH_POWER
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.15Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:208W; No. Of Pins:3Pins Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCB20N60TM
DISTI # 33791569
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R8000
  • 3200:$1.6853
  • 800:$1.7721
FCB20N60TM
DISTI # V36:1790_06337698
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R0
  • 800000:$1.5440
  • 400000:$1.5460
  • 80000:$1.7890
  • 8000:$2.2180
  • 800:$2.2900
FCB20N60TM
DISTI # V72:2272_06337698
ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R0
    FCB20N60TM
    DISTI # FCB20N60TM
    ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60TM)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Asia - 0
    • 40000:$2.1723
    • 20000:$2.2085
    • 8000:$2.2847
    • 4000:$2.3662
    • 2400:$2.4539
    • 1600:$2.5483
    • 800:$2.6502
    FCB20N60TM
    DISTI # FCB20N60TM
    ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB20N60TM)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 3200:$1.5900
    • 4800:$1.5900
    • 8000:$1.5900
    • 800:$1.6900
    • 1600:$1.6900
    FCB20N60TM
    DISTI # FCB20N60TM
    ON SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB20N60TM)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 8000:€1.4900
    • 4800:€1.5900
    • 3200:€1.6900
    • 1600:€1.7900
    • 800:€1.8900
    FCB20N60TM
    DISTI # 31K6745
    ON SemiconductorN CHANNEL MOSFET, 600V, 20A, D2-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
    • 500:$2.4100
    • 250:$2.6800
    • 100:$2.8200
    • 50:$2.9700
    • 25:$3.1000
    • 10:$3.2400
    • 1:$3.8000
    FCB20N60TM.
    DISTI # 15AC2922
    Fairchild Semiconductor CorporationTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.15ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:208W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 3200:$1.5900
    • 1:$1.6900
    FCB20N60TM
    DISTI # 512-FCB20N60TM
    ON SemiconductorMOSFET HIGH POWER
    RoHS: Compliant
    4545
    • 1:$3.5000
    • 10:$2.9800
    • 100:$2.5800
    • 250:$2.4500
    • 500:$2.1900
    • 800:$1.9000
    FCB20N60TM
    DISTI # 6710330P
    ON SemiconductorMOSFET N-CHANNEL 600V 20A D2PAK, RL4
    • 500:£1.6700
    • 250:£1.8500
    • 100:£1.9500
    • 25:£2.2500
    FCB20N60TM
    DISTI # 6710330
    ON SemiconductorMOSFET N-CHANNEL 600V 20A D2PAK, EA32
    • 500:£1.6700
    • 250:£1.8500
    • 100:£1.9500
    • 25:£2.2500
    • 1:£3.9600
    FCB20N60TM
    DISTI # 2083213
    ON SemiconductorMOSFET, N CH, 600V, 20A, TO-263
    RoHS: Compliant
    788
    • 800:$2.9200
    • 500:$3.3700
    • 250:$3.7700
    • 100:$3.9700
    • 10:$4.5800
    • 1:$5.3800
    FCB20N60TM
    DISTI # 2083213
    ON SemiconductorMOSFET, N CH, 600V, 20A, TO-263788
    • 500:£1.4600
    • 250:£1.8900
    • 100:£1.9900
    • 10:£2.2900
    • 1:£3.0300
    Bild Teil # Beschreibung
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    PIC32MZ2064DAG176-I/2J

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    C1005X5R1V105K050BE

    Mfr.#: C1005X5R1V105K050BE

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    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 35V 1.00uF X5R 10% Soft Term
    HW-USBN-2B

    Mfr.#: HW-USBN-2B

    OMO.#: OMO-HW-USBN-2B

    Programmer Accessories Lattice USB Programming Cable
    IRLML0040TRPBF

    Mfr.#: IRLML0040TRPBF

    OMO.#: OMO-IRLML0040TRPBF-INFINEON-TECHNOLOGIES

    MOSFET N-CH 40V 3.6A SOT-23-3
    ADE7953ACPZ-RL

    Mfr.#: ADE7953ACPZ-RL

    OMO.#: OMO-ADE7953ACPZ-RL-ANALOG-DEVICES-INC-ADI

    Data Converter Systems SGL Phase Multifcn Metering IC
    AM26C32QDR

    Mfr.#: AM26C32QDR

    OMO.#: OMO-AM26C32QDR-TEXAS-INSTRUMENTS

    IC RECEIVER RS422/RS423 16SOIC
    HW-USBN-2B

    Mfr.#: HW-USBN-2B

    OMO.#: OMO-HW-USBN-2B-LATTICE-SEMICONDUCTOR

    ACCY USB DOWNLOAD CABLE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von FCB20N60TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,50 $
    3,50 $
    10
    2,98 $
    29,80 $
    100
    2,58 $
    258,00 $
    250
    2,45 $
    612,50 $
    500
    2,19 $
    1 095,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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