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FDS6694

FDS6694
Mfr. #:
FDS6694
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDS6694 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
9.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
FDS6694
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
3.9 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
50 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
9 ns
Teil # Aliase:
FDS6694_NL
Gewichtseinheit:
0.004586 oz
Tags
FDS6694, FDS669, FDS66, FDS6, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
30V N-Channel Fast Switching PowerTrench® MOSFET
***ical
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
***i-Key
MOSFET N-CH 30V 12A 8-SOIC
***eco
30V/16V, 11/13.5MO, NCH, SINGLE, SO8, 400A GOX, PTII<AZ
***et
30V/16V, 11/13.5MO, NCH, SINGLE, SO8, 400A GOX, PTIII
***ser
MOSFETs SO-8
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***nell
MOSFET, N CH 12A 30V SOIC8; Transistor Type:MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:12A; On State Resistance:11mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C
***ment14 APAC
MOSFET, N CH 12A 30V SOIC8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
FDS6694
DISTI # FDS6694-ND		ON SemiconductorMOSFET N-CH 30V 12A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS6694
    DISTI # 512-FDS6694    		ON SemiconductorMOSFET SO-8
    RoHS: Compliant    		0
      FDS6694_Q
      DISTI # 512-FDS6694_Q      		ON SemiconductorMOSFET SO-8
      RoHS: Not compliant      		0
        FDS6694Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		28954
        • 1000:$0.4500
        • 500:$0.4700
        • 100:$0.4900
        • 25:$0.5100
        • 1:$0.5500
        FDS6694Fairchild Semiconductor CorporationMOSFET Transistor, N-Channel, SO11201
        • 5456:$0.2625
        • 2561:$0.2750
        • 1:$1.0000
        FDS6694Fairchild Semiconductor Corporation 2500
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          4000
          Menge eingeben:
          Der aktuelle Preis von FDS6694 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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