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PSMN3R0-60BS,118

PSMN3R0-60BS,118
Mfr. #:
PSMN3R0-60BS,118
Hersteller:
Nexperia
Beschreibung:
MOSFET Std N-chanMOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN3R0-60BS,118 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PSMN3R0-60BS,118 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
3.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
306 W
Aufbau:
Single
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Nexperia
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.139332 oz
Tags
PSMN3R0-6, PSMN3R0, PSMN3, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN3R0-60BS - N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 60V D2PAK
***ark
MOSFET, N CHANNEL, 60V, 100A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:306W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 60V, 100A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0032ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:306W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN3R0-60BS,118
DISTI # V36:1790_06540901		NexperiaPSMN3R0-60BS/D2PAK/REEL13//0
    PSMN3R0-60BS,118
    DISTI # 1727-7121-1-ND    		NexperiaMOSFET N-CH 60V 100A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1605In Stock
    • 100:$2.3275
    • 10:$2.8960
    • 1:$3.2100
    PSMN3R0-60BS,118
    DISTI # 1727-7121-6-ND    		NexperiaMOSFET N-CH 60V 100A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1605In Stock
    • 100:$2.3275
    • 10:$2.8960
    • 1:$3.2100
    PSMN3R0-60BS,118
    DISTI # 1727-7121-2-ND    		NexperiaMOSFET N-CH 60V 100A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		1600In Stock
    • 5600:$1.3056
    • 2400:$1.3558
    • 1600:$1.4562
    • 800:$1.5868
    PSMN3R0-60BS,118
    DISTI # PSMN3R0-60BS,118    		NexperiaTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN3R0-60BS,118)
    RoHS: Compliant
    Min Qty: 4800
    Container: Reel    		Americas - 0
    • 9600:$1.0900
    • 14400:$1.0900
    • 24000:$1.0900
    • 48000:$1.0900
    • 4800:$1.1900
    PSMN3R0-60BS,118
    DISTI # PSMN3R0-60BS,118    		NexperiaTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN3R0-60BS,118)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
      PSMN3R0-60BS,118
      DISTI # 771-PSMN3R0-60BS,118      		NexperiaMOSFET Std N-chanMOSFET
      RoHS: Compliant      		153
      • 1:$2.6900
      • 10:$2.2900
      • 100:$1.8300
      • 500:$1.6000
      • 800:$1.3300
      • 2400:$1.2400
      • 4800:$1.1900
      PSMN3R0-60BS,118
      DISTI # 2114729      		NexperiaMOSFET, N-CH, 60V, 100A, D2PAK
      RoHS: Compliant      		629
      • 2500:$1.5600
      • 1000:$1.6400
      • 500:$1.7200
      • 250:$1.8200
      • 100:$1.9300
      • 25:$2.0900
      • 10:$2.3300
      • 1:$2.5800
      PSMN3R0-60BS,118
      DISTI # 2114729      		NexperiaMOSFET, N-CH, 60V, 100A, D2PAK
      RoHS: Compliant      		629
      • 500:£0.9090
      • 250:£1.0800
      • 100:£1.2500
      • 10:£1.5700
      • 1:£2.0800
      Bild Teil # Beschreibung
      2SC5551AF-TD-E

      Mfr.#: 2SC5551AF-TD-E

      OMO.#: OMO-2SC5551AF-TD-E

      		 RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz
      505431-1000

      Mfr.#: 505431-1000

      OMO.#: OMO-505431-1000-1190

      		 CONTACT, SOCKET, 30-26AWG, CRIMP, Product Range:Micro-Lock PLUS 505431 Series, Contact Gender:Socket, Contact Termination Type:Crimp, Wire Size AWG Max:26AWG, Contact Plating:Tin Plated Contacts,
      505565-0501

      Mfr.#: 505565-0501

      OMO.#: OMO-505565-0501-1190

      		 MLX5055650501 - Bulk (Alt: 5055650501)
      2SC5551AF-TD-E

      Mfr.#: 2SC5551AF-TD-E

      OMO.#: OMO-2SC5551AF-TD-E-ON-SEMICONDUCTOR

      		 RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz
      251R15S181GV4E

      Mfr.#: 251R15S181GV4E

      OMO.#: OMO-251R15S181GV4E-JOHANSON-TECHNOLOGY

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 180pF 2%
      251R14S1R8BV4T

      Mfr.#: 251R14S1R8BV4T

      OMO.#: OMO-251R14S1R8BV4T-1105

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 1.8pF ULTRA HIGH Q NPO
      505565-0201

      Mfr.#: 505565-0201

      OMO.#: OMO-505565-0201-1190

      		 Micro-Lock PLUS Receptacle Housing, 1.25mm, Single Row, Positive Lock, 2 Circuits
      Verfügbarkeit
      Aktie:
      153
      Auf Bestellung:
      2136
      Menge eingeben:
      Der aktuelle Preis von PSMN3R0-60BS,118 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,69 $
      2,69 $
      10
      2,29 $
      22,90 $
      100
      1,83 $
      183,00 $
      500
      1,60 $
      800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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