IGW75N65H5XKSA1

IGW75N65H5XKSA1
Mfr. #:
IGW75N65H5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT TRENCH 650V 120A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW75N65H5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGW75N65H5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IGW7, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube
***an P&S
650V,120A,High Speed IGBT
***i-Key
IGBT TRENCH 650V 120A TO247-3
***ronik
IGBT 650V 75A 1.65V TO247-3
***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, SINGOLO, 650V, 120A, TO-247; Corrente di Collettore CC:120A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:395W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Teil # Mfg. Beschreibung Aktie Preis
IGW75N65H5XKSA1
DISTI # V36:1790_06377901
Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube0
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1-ND
    Infineon Technologies AGIGBT TRENCH 650V 120A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    660In Stock
    • 2640:$2.7625
    • 720:$3.4393
    • 240:$4.0401
    • 25:$4.6616
    • 10:$4.9310
    • 1:$5.4900
    IGW75N65H5XKSA1
    DISTI # IGW75N65H5XKSA1
    Infineon Technologies AGTrans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW75N65H5XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1200:$2.4900
    • 2400:$2.4900
    • 720:$2.5900
    • 480:$2.6900
    • 240:$2.7900
    IGW75N65H5XKSA1
    DISTI # 34AC1616
    Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:395W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes336
    • 500:$3.3000
    • 250:$3.6900
    • 100:$3.8800
    • 50:$4.0800
    • 25:$4.2800
    • 10:$4.4800
    • 1:$5.2700
    IGW75N65H5XKSA1
    DISTI # 726-IGW75N65H5XKSA1
    Infineon Technologies AGIGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e12
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8400
    • 250:$3.6500
    • 500:$3.2700
    IGW75N65H5XKSA1
    DISTI # 2781022
    Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247
    RoHS: Compliant
    336
    • 1000:$3.6300
    • 500:$3.8000
    • 250:$4.0100
    • 100:$4.2400
    • 10:$4.7900
    • 1:$5.1200
    IGW75N65H5XKSA1
    DISTI # 2781022
    Infineon Technologies AGIGBT, SINGLE, 650V, 120A, TO-247362
    • 500:£2.4700
    • 250:£2.7600
    • 100:£2.9000
    • 10:£3.3500
    • 1:£3.9400
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    Mfr.#: IGW75N65H5XKSA1

    OMO.#: OMO-IGW75N65H5XKSA1-INFINEON-TECHNOLOGIES

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    OMO.#: OMO-IGW75N60TFKSA1-INFINEON-TECHNOLOGIES

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    IGW75N60TXK

    Mfr.#: IGW75N60TXK

    OMO.#: OMO-IGW75N60TXK-1190

    Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW75N60TFKSA1)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IGW75N65H5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,74 $
    3,74 $
    10
    3,55 $
    35,48 $
    100
    3,36 $
    336,15 $
    500
    3,17 $
    1 587,40 $
    1000
    2,99 $
    2 988,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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