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SKM400GA12E4

SKM400GA12E4
Mfr. #:
SKM400GA12E4
Hersteller:
SEMIKRON
Beschreibung:
IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM400GA12E4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
SEMIKRON
Produktkategorie
IC-Chips
Tags
SKM400GA12, SKM400GA1, SKM400GA, SKM400, SKM40, SKM4, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IGBT, D-59, IGBT, 1200 V, 565 A, 1200 V, 5.5 V (Typ.), 70 ns (Typ.)
***ark
IGBT MODULE, SINGLE, 1.2KV, 616A; Continuous Collector Current:616A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
***ikron
Features: IGBT4 = 4. Generation (Trench)IGBT V CEsat with positive temperaturecoefficient High short circuit capability, selflimiting to 6 x I CNOM Soft switching 4. Generation CALdiode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders Switched reluctance motor
*** Electronics
IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module
***ow.cn
Trans IGBT Module N-CH 1200V 440A 1450000mW Automotive 7-Pin 62MM-1 Tray
***ment14 APAC
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV
***ineon
Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray
***nell
IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 650A 2250000mW Automotive 4-Pin 62MM-2 Tray
***ark
Transistor, Igbt Module, 1.2Kv, 650A; Transistor Polarity:n Channel; Dc Collector Current:650A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2.25Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Caserohs Compliant: Yes
***ineon
Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
Teil # Mfg. Beschreibung Aktie Preis
SKM400GA12E4
DISTI # 77R2583		SEMIKRONIGBT MODULE, SINGLE, 1.2KV, 616A,Transistor Polarity:NPN,DC Collector Current:616A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:-,Product Range:-RoHS Compliant: Yes0
  • 100:$106.1500
  • 50:$112.9500
  • 25:$114.6500
  • 10:$116.3400
  • 5:$119.7400
  • 1:$123.1400
SKM400GA12E4
DISTI # 70098166		SEMIKRONIGBT,D-59,IGBT,1200 V,565 A,1200 V,5.5 V (Typ.),70 ns (Typ.)
RoHS: Compliant		0
  • 1:$174.1100
  • 12:$164.8100
  • 36:$156.4400
  • 96:$148.8800
  • 144:$142.0500
Bild Teil # Beschreibung
SKM400GB176D

Mfr.#: SKM400GB176D

OMO.#: OMO-SKM400GB176D-1190

 SEMITRANS, IGBT HALFBRIDGE TRENCH, 1700V
SKM400GA123D H4

Mfr.#: SKM400GA123D H4

OMO.#: OMO-SKM400GA123D-H4-1190

 Neu und Original
SKM400GA124DE

Mfr.#: SKM400GA124DE

OMO.#: OMO-SKM400GA124DE-1190

 Neu und Original
SKM400GA128D

Mfr.#: SKM400GA128D

OMO.#: OMO-SKM400GA128D-1190

 Neu und Original
SKM400GA12E4

Mfr.#: SKM400GA12E4

OMO.#: OMO-SKM400GA12E4-1190

 IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
SKM400GAL123D

Mfr.#: SKM400GAL123D

OMO.#: OMO-SKM400GAL123D-1190

 Neu und Original
SKM400GAL12T4

Mfr.#: SKM400GAL12T4

OMO.#: OMO-SKM400GAL12T4-1190

 IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
SKM400GAR128D

Mfr.#: SKM400GAR128D

OMO.#: OMO-SKM400GAR128D-1190

 Insulated Gate Bipolar Transistor, 565A I(C), 1200V V(BR)CES, N-Channel
SKM400GB123D

Mfr.#: SKM400GB123D

OMO.#: OMO-SKM400GB123D-1190

 Neu und Original
SKM400GB124D

Mfr.#: SKM400GB124D

OMO.#: OMO-SKM400GB124D-1190

 IGBT Module, Transistor Polarity:N Channel, DC Collector Current:570A, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:7, Collector Emitter Saturation Voltage:2.1V,
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von SKM400GA12E4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
159,22 $
159,22 $
10
151,26 $
1 512,64 $
100
143,30 $
14 330,25 $
500
135,34 $
67 670,65 $
1000
127,38 $
127 380,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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